• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.371-377
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.110-114
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• 2005

This study proposes an accurate method of monitoring precursor consumption in chemical vapor deposition (CVD) systems. Since precursor costs are significant, finding an efficient method to monitor precursor consumption is necessary One example is the use of non-contact and inexpensive ultrasonic sensors for determining the liquid level in a container. In this study, sensors based on ultrasonic techniques have been developed for monitoring the precursor consumption in a CVD system. Moreover, the prototype sensors developed in this study can be useful in the field of semiconductors.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.1 no.1
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• pp.37-42
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• 2000

Copper thin films have been prepared by a metal organic chemical vapor deposition (MOCVD) technology on polyimide and TiN substrates. The Cu-MOCVD technology has advantages of the high deposition rate and the good step coverage compared with the conventional physical vapor deposition (PVD) technology in several industrial applications. The Cu films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were annealed in a vacuum condition after the deposition, and the annealing effect on the electrical properties of the films was measured. The crystallinity and the microstructures of the films were observed by scanning electron microscopy (SEM), and the electrical resistivity was measured by 4-point probe. In the case of the Cu deposition on TiN substrate, the best electrical property of the films was measured for the samples prepared at 18$0^{\circ}C$. Very high deposition rate of the Cu film up to 250 nm/min was obtained on the polyimide substrate when the mixture of liquid and vapour precursor was used.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.351-352
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• 2012

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.90.2-90.2
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• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.59-59
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.24-24
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• 1997

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.436-436
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• 2010

국내 반도체 시장은 세계 1위의 시장점유율을 가지고 있지만 핵심장비의 경우 국내 장비 기술의 낙후로 인해 대부분을 선진국에 의존하는 실정이다. 따라서 국내 장비 기술의 발전 요구에 따라 연구가 진행되었으며 기존 PE-CVD (Plasma Enhanced Chemical Vapor Deposition) 장비에서의 하전입자에 의한 기판 손상 가능을 제거하고 개개의 반응 원소의 에너지와 플럭스를 조절하여 다양한 공정온도에서 증착을 구현할 수 있는 HNB-CVD(Hyperthermal Neutral Beam Chemical Vapor Deposition) 장비를 개발하였다. 고밀도 플라즈마 생성을 위한 마이크로웨이브 SLAN(Slot Antenna) 소스를 사용하였으며 대면적 공정에 적합하도록 설계하였다. 최적의 설계와 진단을 위한 마이크로웨이브 SLAN 소스내의 E-field 분포 시뮬레이션과 Langmuir Probe 진단이 이루어졌다.