• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.2-188.2
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• 2014

Chemical vapor deposition (CVD) method is usually used to grow high-quality large area graphene. In the CVD process, copper is an especially important catalytic-substrate due to the fact that graphene films grown on Cu foils are predominantly one monolayer thick. In this study, we has grown graphene on several types of copper substrates: Cu foils and copper single crystal surfaces such as Cu(100) and Cu(111) are chosen. To investigate the differences between graphene grown on foils and single crystals, we use Raman spectroscopy, X-ray diffraction and atomic force microscopy. Details of the experimental results will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.250-250
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• 2013

본 연구에서는 차세대 상변화메모리(PCRAM)와 초고속 소자(FET) 등의 응용을 위하여 사용되고 있는 Ge 소재를 제조하기 위해새롭게 전구체를 개발하고 이를 CVD (Chemical Vapor Deposition) 공정을 이용하여 증착실험을 실시하였다. 새롭게 개발된 Ge 전구체 (isopropyl germane)는 기존 Ge 전구체보다 합성비용이 경제적이며 공정이 간단하고 상업적 생산에도 적합하다는 장점을 갖고 있다. Ge 박막의 증착은 증착압력, 증착온도, reactive gas (H2) 유량, carrier gas(Ar) 유량, 기판(Si, Pt 등) 등을 변수로 하여 실험하였다. 증착된 박막에 대하여 FE-SEM, XRD 등을 통하여 기본적인 물성분석을 실시하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.234-235
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• 2008

The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of poly(polycrystalline) 3C-SiC thin films according to Ar flow rates and the geometric structures of reaction tube, respectively. The poly 3C-SiC thin film was deposited by APCVD (Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS (Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 1~10 slm Ar as the main flow gas. According to the increase of main carrier gas, surface fringes and flatness are improved. It shows the distribution of thickness is formed uniformly.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.264.1-264.1
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• 2013

Graphene is a two-dimensional carbon material whose structure is one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice. It has drawn significant attention with its distinguished structural and electrical properties. Extremely high mobility and a tunable band gap make graphene potentially useful for innovative approaches to electronics. Although mechanical exfoliation of graphite and decomposition of SiC surfaces upon thermal treatment have been the main method for graphene, they have some limitations in quality and scalability of as-produced graphene films. Solutionphase and solvothermal syntheses of graphene achieved a major improvement for processing, however for device fabrication, a reproducible method such as chemical vapor deposition (CVD) growth yielding high quality films of controlled thickness is required. In this research, we synthesized hexagonal graphene flakes on Cu foils by CVD method and controlled its coverage, density and the size of graphene domains by changing reaction parameters. It is important to control these parameters of graphene growth during synthesis in order to achieve tunable properties and optimized device performance.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.157-158
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• 2007

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.76-77
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• 2007

화학 기상 증착법 (Chemical Vapor Deposition)은 기체 원료의 화학반응을 이용하여 박막, 미립자, nano-tube등 고체 재료를 합성하는 증착 방법이며, 현재 공업적으로 확산되어 반도체 공정과 같은 박막제조에 이용되고 있다. 박막제조에 있어서 중요한 관심사인 기판의 증착률은 기판의 회전 속도에 의하여 영향 받을 수 있다. 따라서 본 연구에서는 최적의 회전 속도를 찾아내기 위해 박막특성에 직접적으로 연관이 있는 CVD 반응기 내의 유동특성을 유한체적법 (Finite volume method)과 SIMPLE (Semi-Implicit Method for Pressure-Linked Equation) 알고리즘을 사용하여 수치모사 하였고 기판에서 화학 반응을 계산하기 위해 Arrhenius 모델을 사용하였다.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.779-784
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• 2003

Nickel powders were obtained by various preparation methods, and their sintering characteristics were investigated. Nickel powders made by wet chemical process (WCP) had a higher surface area and more narrow size distribution than that of chemical vapor deposition (CVD) method. Nickel-oxide powders by the WCP method were prepared at $200^{\circ}C$ for 3 hr. The oxidation behaviour of nickel-oxide powder is similar with that of the CVD method. Nickel powders made by the WCP method showed a higher shrinkage in the range of $600^{\circ}C$∼$900^{\circ}C$ than that of commercial powder made by the CVD method. The similar results were observed on the surface microstructure of sintered bodies by SEM measurements.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.561-564
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• 1987

The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.328-328
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• 2011

Wetting phenomena have been heavily studied for industrial and academic researches especially tuning the wettability between hydrophilicity and hydrophobicity. Wicking through the surface texture is shown on superhydrophilic surface while rolling (or dewetting) on the patterns of superhydrophobic surface. These wetting phenomena are known to be affected by surface wettability determined with physical surface patterns as well as chemical composition of surface layer. In this research, we introduce a method to control the wettability of a thin C-SiOx film from hydrophobic to hydrophilic using a mixture gas of HMDSO/$O_2$ by plasma polymerization with rf-CVD (radio frequency-Chemical Vapor Deposition). Wettability was finely controlled by changing the ratio of HMDSO/$O_2$. Hydrophilicity increased as the ratio decreased, while hydrophobicity was enhanced by the ratio. Moreover, fine control from superhydrophilicity to superhydrophobicity was achieved by C-SiOx coating on the Si wafer with prepatterns of submicron-sized pillar array formed by $CF_4$ plasma etching.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.9-17
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• 1991

TiC coating formed on $Si_3N_4-TiC$ composite ceramic by chemical vapor deposition (CVD) has an improved microstructures, better thermal shock resistance and interfacial bonding than TiN coating does. TiN coating formed by CVD, however, has lower friction coefficients against steels and better chemical stability. The experimental results indicate that the coated insert is superior to the uncoated one in flank and crater wear resistance. And the multilayer coating shows an improved wear resistance than the monolayer coating.