• The Journal of Korean Society for School & Community Health Education
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• v.18 no.2
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• pp.97-105
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• 2017

Objectives: The purpose of this study is to investigate the knowledge, confidence and coping ability about emergency treatment, and the impact of right knowledge and confidence in practice on coping ability in part of dental hygienists. In addition, we suggest emergency treatment knowledge for develop substantive education program applicable to clinical as required data. Methods: This subjects were 259 dental hygienists working in dental setting Seoul, Gyeonggi-do from June 5 to July 20, 2016. We analyzed the data with frequency analysis, descriptive statistics, t-test, one-way ANOVA, pearson correlation coefficient, regression analysis by using SPSS. Results: Emergencies experienced by a dental hygienist in dental practice were fainting, local anesthetic allergies, and seizures. As a result of comparing the first aid knowledge, self-confidence, coping ability according to general characteristics of the study subjects, university graduation was higher than college and 3~5 years of working experience showed higher self confidence(F=3.837, p=0.023). The performance of self confidence and coping ability according to the characteristics of first aid showed high results in first aid training and dental hygienist having CPR license. Based on multiple regression analysis, confidence about emergency treatment is the biggest impact on coping ability(p<0.05). Conclusions: Dental hygienists need to develop and provide programs that can improve the ability of dental hygienists to respond appropriately and promptly in case of emergencies by recognizing the importance of first aid through conservative education.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.1-8
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• 2019

The $Cu(In,Ga)Se_2$ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to $500^{\circ}C$ the CIGS film consisted of CIGS phase and secondary phases including $In_4Se_3$, InSe, and $Cu_9(In,Ga)_4$. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing $450^{\circ}C$ and subsequent Se annealing $550^{\circ}C$ showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• Current Photovoltaic Research
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• v.9 no.1
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• pp.1-5
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• 2021

The properties of the electron transport layer (ETL) have a great effect on perovskite solar cell performance. Depositing conformal SnO2 ETL on bottom textured silicon cells is essential to increase current density in terms of the silicon-perovskite tandem solar cells. In the recent study, the SnO2 electron transport layer deposited by the sputtering method showed an efficiency of 19.8%. Also, an electron transport layer with a sputtered TiO2 electron transport layer in a 4-terminal tandem solar cell has been reported. In this study, we synthesized SnOx ETL with a various sputtering power range of 30-60W by Radio-frequency (RF)-magnetron sputtering. The properties of SnOx thin film were characterized using ellipsometer, UV-vis spectrometer, and IV measurement. With a sputtering power of 50W, the solar cell showed the highest efficiency of 13.3%, because of the highest fill factor by the conductivity of SnOx film.

• Current Photovoltaic Research
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• v.11 no.3
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• pp.79-86
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• 2023

As we strive to mitigate the environmental impact caused by the use of fossil fuels, the exploration of alternative energy sources has gained significant attention. Solar energy, in particular, has emerged as a promising solution due to its eco-friendly nature and virtually limitless availability. Among the various types of solar cells that harness this abundant energy source, organic solar cells have garnered considerable interest. Organic solar cells feature a photo-active layer composed of organic semiconductors, offering a range of appealing advantages such as cost-effectiveness, flexibility, translucency, and the ability to produce customizable colors. However, the commercialization of organic solar cells has been impeded by certain challenges, notably their relatively low efficiency and stability. To overcome these obstacles and pave the way for wider adoption, researchers have been exploring innovative approaches, including the implementation of ternary blend organic solar cells. This strategy involves introducing a third component into the photo-active layer alongside the organic semiconductors, with the aim of enhancing the overall performance of the solar cell. In this paper, we delve into the issues associated with organic solar cells and focus on one potential solution: ternary blend organic solar cells. Specifically, we examine the application of this approach to PM6:Y6, which stands as one of the most popular combinations of organic semiconductors. By investigating the potential of ternary blends, particularly utilizing PM6:Y6, we aim to accelerate the commercialization of organic solar cells.

• Current Photovoltaic Research
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• v.11 no.3
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.16-22
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• 2022

The long-term stability of PSCs against visual and UV light, moisture, electrical bias and high temperature is an important issue for commercialization. In particular, since the operation temperature of solar cell can rise above 85℃, a study on thermal stability is required. In this study, the cause of thermal-induced degradation of PSCs was investigated using the SCAPS-1D simulation tool. First, PSCs of TiO₂/CH₃NH₃PbI₃/Spiro-OMeTAD/Au structure were exposed to a constant temperature of 85℃ to observe changes in conversion efficiency and quantum efficiency. Because the EQE reduction above 500 nm was remarkable, we simulated PSCs performance as a function of lifetime, doping density of perovskite and spiro-OMeTAD. Consequently, the main cause of thermal-induced degradation is considered to be the change in the perovskite doping concentration and lifetime due to ion migration of perovskite.

• Journal of Korean Critical Care Nursing
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• v.16 no.3
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• pp.99-108
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• 2023

Purpose : This retrospective study aims to provide basic data for intervention to improve clinical outcomes and identify the characteristics of the rebound hyperthermia (RHG) and non-rebound hyperthermia (NRHG) groups by checking body temperature in patients with post-cardiac arrest syndrome. Method : The study involved 118 patients who completed target temperature management (TTM) in an acute-care unit. Data were analyzed for frequency, percentages, mean, standard deviation, median, and quartiles, and compared using the chi-squared test and Mann-Whitney U-test. Results : Rebound hyperthermia (RH) was observed in 74 (62.7%) patients, predominantly male (69.5%), with an average age of 64.54 ± 15.98, and a body mass index of 23.22 ± 4.75kg/m² (overweight). Hypertension (50%) was the most common co-morbidity, followed by diabetes and heart disease (33.1%). Neuron-specific enolase levels were higher in the NRHG 24, 48, and 72 hours after recovery of spontaneous circulation (p = .037, p < .001, p = .008). The APHCHE IV was also higher in the NRHG (p < .001). RH occurred 25.49 (7.28-52.96) hours after TTM completion, lasting for 2 (1-3) hours. Temperature reduction strategies included notifying doctors, administering antipyretics, and nursing intervention, with the latter being the most common at 94.6%. Half of the subjects in the RHG and 77.3% in the NRHG fell into cerebral performance categories 3, 4, and 5 (p = .003). Conclusion : RH is more likely a body mechanism related to CPR and TTM than a result of pathogenic infection. Therefore, we require an active intervention for hyperthermia, and a patient-specific nursing intervention protocol.

• Current Photovoltaic Research
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• v.12 no.2
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• pp.37-40
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• 2024

One of the current innovation trends in the solar industry is the increase in the size of silicon wafers. As the wafer size increases, the series resistance of the module rises, highlighting the need for research on methods for cutting and bonding solar cells. Among these, the Infrared (IR) laser scribing technique has been extensively researched. However, there is still insufficient optimization research regarding the thermal damage caused by lasers on the Transparent Conductive Oxide (TCO) layer of Heterojunction (HJT) solar cells. Therefore, in this study, we systematically varied conditions such as IR laser scribing speed, frequency, power, and the number of scribes to investigate their impact on the performance of cut cells under each condition. Additionally, we conducted a comparative analysis of thermal damage effects on the TCO layer based on varying scribing depths.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.97-102
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• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.