• 제목/요약/키워드: CO and $CO_2$ Sensor

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Avoidance of Internal Resonances in Hemispherical Resonator Assemblies from Fused Quartz Connected by Indium Solder

  • Sarapuloff, Sergii A.;Rhee, Huinam;Park, Sang-Jin
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2013.04a
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    • pp.835-841
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    • 2013
  • Modern solid-state gyroscopes (HRG) with hemispherical resonators from high-purity quartz glass and special surface superfinishing and ultrathin gold coating become the best instruments for precise-grade inertial reference units (IRU) targeting long-term space missions. Designing of these sensors could be a notable contribution into development of Korea as a space nation. In participial, 40mm diameter thin-shell resonator from high-purity fused quartz, fabricated as a single-piece with its supporting stem has been designed, machined, etched, tuned, tested, and delivered by STM Co. (ATS of Ukraine) several years ago; an extremely-high Q-factor (upto 10~20 millions) has been shown. Understanding of the best way how to match such a unique sensor with inner glass assembly of the gyro means how to use the high potential in a maximal extent; and this has become the urgent task. Inner quartz glass assembly has a very thin indium (In) layer soldered the resonator and its silica base (case), but effects of internal resonances between operational modal pair of the shell-cup and its side (parasitic) modes can notable degrade the potential of the sensor as a whole, instead of so low level of resonator's intrinsic losses. Unfortunately, there are special combinations of dimensions of the parts (so-called, "resonant sizes"), when intensive losses of energy occurs. The authors proposed to use the length of stem's fixture as an additional design parameter to avoid such cases. So-called, a cyclic scheme of finite element method (FEM) and ANSYS software were employed to estimate different combinations of gyro assembly parameters. This variant has no mismatches of numerical origin due to FEM's discrete mesh. The optimum length and dangerous "resonant lengths" have been found. The special attention has been paid to analyses of 3D effects in a cup-stem transient zone, including determination of a difference between the positions of geometrical Pole of the resonant hemisphere and of its "dynamical Pole", i.e., its real zone of oscillation node. Boundary effects between the shell (cup) and 3D short "beams" (inner and outer stems) have been ranged. The results of the numerical experiments have been compared with the classic model of a quasi-hemispherical shell band with inextensional midsurface, and the solution using Rayleigh's functions of the $1^{st}$ and $2^{nd}$ kinds. To guarantee the truth of the recommended sizes to a designer of the real device, the analytical and FEM results have been compared with experimental data for a party of real resonators. The consistency of the results obtained by different means has been shown with errors less than 5%. The results notably differ from the data published earlier by different researchers.

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Snoring Detection using Polyvinylidene Fluoride Vibration Sensors (Polyvinylidene Fluoride 진동센서를 이용한 코골이 검출)

  • Jee, Duk-Keun;Wei, Ran;Kim, Hee-Sun;Im, Jae-Joong
    • Science of Emotion and Sensibility
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    • v.14 no.3
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    • pp.459-466
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    • 2011
  • Sleep diseases such as snoring and sleep apnea are physically, mentally harmful and results serious health problems. Snoring, known as breathing noise, is caused by coupled oscillation of the airway when the air passes through the trachea, and sleep apnea is caused by upper airway blockage. In order to solve these problems, many attempts have been made to detect the snoring during sleep and alleviate it. In this study, a new sensing system and analysis algorithm were developed in order to detect snoring sounds correctly under various sleep environments. Two polyvinylidene fluoride (PVDF) vibration sensors were used inside the pillow. The first PVDF sensor detects vibration transmitted through skull caused by snoring. And the second PVDF sensor detects both snoring sounds and ambient noises. The signals of two sensors were acquired through the designed analog circuits, and analyzed for snoring detection. Ten volunteers were participated for the experiment under five different conditions. Data from two PVDF sensors were processed by the established analysis algorithm, and snoring sounds were compared to noises. The results indicated that the energy of snoring is 70% bigger than that of ambient noise, which proves effectiveness of sensing system and analysis algorithm. Further study would be continued for more wide clinical studies with various environment noises. Based on this study, development of anti-snore pillow and sleep monitoring system for comfort sleep could be developed.

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Fabrication and Characterization of Carbon Nanotube-modified Carbon Paper-based Lactate Oxidase-catalase Electrode (탄소나노튜브로 개질된 탄소종이 기반 젖산산화효소 - 카탈레이즈 전극 제작 및 특성 분석)

  • Ke Shi;Varshini Selvarajan;Yeong-Yil Yang;Hyug-Han Kim;Chang-Joon Kim
    • Korean Chemical Engineering Research
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    • v.61 no.4
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    • pp.576-583
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    • 2023
  • This study aimed to investigate the impact of enhancing the electrode conductivity and mitigating the production of hydrogen peroxide - a by-product arising from lactate oxidation - on the performance of lactate electrodes. The electrical conductivity of the electrode was improved by modifying the surface of carbon paper with single-walled carbon nanotubes. Catalase was introduced to effectively eliminate the hydrogen peroxide produced during the lactate oxidation reaction. The carbon paper electrode, with simultaneous immobilization of both lactate oxidase and catalase, yielded a current 1.7 times greater than the electrode where only lactate oxidase was immobilized. The electrode in which lactate oxidase and catalase were co-immobilized on the surface of carbon paper modified with single-walled carbon nanotubes, produced a current of 171 µA, which was more than twice as much current as the carbon paper with only lactate oxidase immobilized. The optimized electrode showed a linear response up to lactate concentration of 20 mM, confirming that it can be used as a sensor electrode.

Development of Prediction Model for the Na Content of Leaves of Spring Potatoes Using Hyperspectral Imagery (초분광 영상을 이용한 봄감자의 잎 Na 함량 예측 모델 개발)

  • Park, Jun-Woo;Kang, Ye-Seong;Ryu, Chan-Seok;Jang, Si-Hyeong;Kang, Kyung-Suk;Kim, Tae-Yang;Park, Min-Jun;Baek, Hyeon-Chan;Song, Hye-Young;Jun, Sae-Rom;Lee, Su-Hwan
    • Korean Journal of Agricultural and Forest Meteorology
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    • v.23 no.4
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    • pp.316-328
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    • 2021
  • In this study, the leaf Na content prediction model for spring potato was established using 400-1000 nm hyperspectral sensor to develop the multispectral sensor for the salinity monitoring in reclaimed land. The irrigation conditions were standard, drought, and salinity (2, 4, 8 dS/m), and the irrigation amount was calculated based on the amount of evaporation. The leaves' Na contents were measured 1st and 2nd weeks after starting irrigation in the vegetative, tuber formative, and tuber growing periods, respectively. The reflectance of the leaves was converted from 5 nm to 10 nm, 25 nm, and 50 nm of FWHM (full width at half maximum) based on the 10 nm wavelength intervals. Using the variance importance in projections of partial least square regression(PLSR-VIP), ten band ratios were selected as the variables to predict salinity damage levels with Na content of spring potato leaves. The MLR(Multiple linear regression) models were estimated by removing the band ratios one by one in the order of the lowest weight among the ten band ratios. The performance of models was compared by not only R2, MAPE but also the number of band ratios, optimal FWHM to develop the compact multispectral sensor. It was an advantage to use 25 nm of FWHM to predict the amount of Na in leaves for spring potatoes during the 1st and 2nd weeks vegetative and tuber formative periods and 2 weeks tuber growing periods. The selected bandpass filters were 15 bands and mainly in red and red-edge regions such as 430/440, 490/500, 500/510, 550/560, 570/580, 590/600, 640/650, 650/660, 670/680, 680/690, 690/700, 700/710, 710/720, 720/730, 730/740 nm.

Characteristics of $Ta_{2}O_{5}$ Films by RF Reactive Sputtering (RF 반응성 스펏터링으로 제조한 $Ta_{2}O_{5}$ 막의 특성)

  • Park, Wug-Dong;Keum, Dong-Yeal;Kim, Ki-Wan;Choi, Kyu-Man
    • Journal of Sensor Science and Technology
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    • v.1 no.2
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    • pp.173-181
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    • 1992
  • Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

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A Study on the Development of Ignition Trans applied to Gas Boiler (가스보일러에 적용되는 점화 트랜스 개발에 관한 연구)

  • Lee, Ho-kyun;Kim, Jang-Won;Park, Jung-cheul
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.14 no.6
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    • pp.467-472
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    • 2021
  • In this paper, the ignition trans used in the gas boiler was produced to measure current, power factor, and power consumption. As a result of measuring the power factor, the self-made ignition trans was higher than that of foreign products and the power consumption was lower. The ignition gap was fixed to 2 m, and when the ignition rod length was 30cm, 500cm, and 1000cm, it was measured as 3.45A, 14.5A, and 16.2A. When the ignition gap was fixed to 4mm and the ignition rod length was 30cm, 500cm, and 1000cm, it was measured as 2.8A, 10.1A, and 13.2A. When the ignition gap was fixed at 6mm and the ignition rod length was 30cm, 500cm, and 1000cm, it was measured as 2.73A, 10.2A, and 32.6A. When the ignition gap was fixed at 8 mm and the ignition rod length was 30 cm, 500cm, and 1000cm, it was measured as 3.13A, 9.37A, and 21.4. The ignition gap was fixed at 10 mm, and when the ignition rod length was 30cm, it was measured as 3.4A, 14.4 A, and 25.6A. In conclusion, as the length of the ignition rod increased, the current also increased.

$Ta_{2}O_{5}/SiO_{2}$ Based Antifuse Device having Programming Voltage below 10 V (10 V이하의 프로그래밍 전압을 갖는 $Ta_{2}O_{5}/SiO_{2}$로 구성된 안티휴즈 소자)

  • Lee, Jae-Sung;Oh, Seh-Chul;Ryu, Chang-Myung;Lee, Yong-Soo;Lee, Yong-Hyun
    • Journal of Sensor Science and Technology
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    • v.4 no.3
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    • pp.80-88
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    • 1995
  • This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

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A Study on the Development of Low Frequency Electronic Ignition Trans for Large Combustors (대형연소기에 적용되는 저주파 전자식 점화 트랜스 개발에 관한 연구)

  • Lee, Ho-kyun;Park, Jung-cheul
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.15 no.4
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    • pp.223-229
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    • 2022
  • In this paper, the ignition trans used in boilers was studied. Regardless of the change in the ignition rod length and the ignition rod gap, the output frequency was measured between 59.5 and 61.3 Hz, and it was found that the low frequency circuit operated normally. When the ignition rod gap changed by 2 to 10 mm, the ignition rod length was measured from 2.8A to 3.45A at 30cm. The ignition rod length was measured from 9.37 A to 14.5 A at 500 cm and from 13.2 A to 32.6 A at 1000 cm. As the ignition rod length and the ignition rod gap increased, the current increased. As a result of measuring the secondary coil output voltage. The ignition rod length was measured from AC 0.84 kV to AC 1.75 kV at 30 cm, AC 1.17 kV to AC 1.944 at 500 cm, and AC 1.4 kV to AC 7.18 kV at 1000 cm. As the ignition rod length and the ignition rod gap increased, the output voltage of the secondary coil also increased. As a result of measuring the output voltage of the ignition trans, the ignition rod length was measured from DC 1.11 kV to DC 1.57 kV at 30cm, DC 2.49 kV to DC 3.72 kV at 500cm, and DC 3.78 kV to DC 9.42 kV at 1000cm, and the power voltage increased as the ignition rod length and interval increased.

Effects of Process Variables on the Microstructure and Gas Sensing Characteristics of Magnetron Sputtered $\textrm{SnO}_2$Thin Films (마그네트론 스퍼터링 증착 조건에 따른 $\textrm{SnO}_2$ 박막의 미세구조와 가스검지특성 변화)

  • Kim, Jong-Min;Moon, Jong-Ha;Lee, Byung-Teak
    • Korean Journal of Materials Research
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    • v.9 no.11
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    • pp.1083-1087
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    • 1999
  • Microstructures and the gas-sensing characteristics of the $\textrm{SnO}_2$ thin films were studied, which were deposited at various conditions (rf power, sample temperature, $\textrm{O}_2$/Ar ratio) by the rf magnetron sputtering. As a result, six typical microstructures were derived, such as amorphous(A), amorphous mixed with polycrystalline grains (A+P), polycrystalline with random crystalographic orientation (P), fine columnar (FC), coarse columnar (CC) and Zone T (T) with dense fiberous structure. Typically, A, A+ P, and P structures were formed when no $\textrm{O}_2$ was added to the sputter gas, whereas FC, CC, and T structures were obtained when $\textrm{O}_2$ was added. The A structure formed at low rf power and low temperature, the A+P at high rf power and low temperature, and the P at high rf power and high temperature. The FC structure was obtained at low rf power and low temperature. the CC at low rf power and high temperature, and the T at high rf power and low temperature. Results of the gas-sensing test of the sensor chips fabricated from the typical films indicated that the fine columnar microstructure shows the highest sensitivity both at $300^{\circ}C$ and $400^{\circ}C$. It was proposed that this is due to the high specific surface area of the micro-columns.

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Characteristics and Application of PLT Thin-Films Deposited on ITO Substrate (ITO 기판위에 증착시킨 PLT 박막의 특성 및 그 응용)

  • Bae, Seung-Choon;Park, Sung-Kun;Choi, Byung-Jin;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.6 no.5
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    • pp.423-429
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    • 1997
  • We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

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