• Journal of Magnetics
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• v.17 no.1
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.547-550
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• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.571-576
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• 2007

In this paper, we have investigated chemical, mechanical and structural properties by changing the content of carbon nanotube, Which is a component part of semiconductive shield in underground power transmission cable. The multi luminescence spectrometer MLA-GOLDS was used to investigate chemical properties of specimens. Also, the density meter EW-200SG was used to investigate the mechanical properties of specimens, and the FE-SEM S-4300 in Hitachi was used for dispersion of CNT(Carbon nanotube). As a result, the cl intensity, which show the effect of oxidation, was decreased by CNT of 1 [wt%], and the density of semiconductive shield materials with CNT and EEA(Ethylene Ethyl Acrylate) is lower than that for commercial semiconductive shield materials. Also, the properties of dispersion showed an increase according to an increase in the ratio of CNT, and the properties were the best at 5 wt%. Therefore, excellent chemical, mechanical and structural properties can be improved with the small amount of CNT.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2155-2161
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• 2013

Composite materials of mesoporous carbon and carbon nanotubes were synthesized using Ni, Co and Pd-loaded CMK3 via a catalytic reaction of methane and $CO_2$. The CNTs grew from the pores of the mesoporous carbon supports, and they were attached tightly to the CMK3 surface in a densely tangled shape. The CNT/CMK3 composite showed both non-graphitic mesoporous structures, and graphitic characteristics originating from the MWCNTS grown in the pores of CMK3. The electrochemical properties of the materials were characterized by their electrorheological effects and cyclic voltammetry. The CNTs/CMK3 composites showed high electrical conductivity and current density. The CNT/CMK3 or KOH-modified CNT/CMK3 particles were incorporated in a PMMA matrix to improve the thermal and electrical conductivity. Even higher thermal conductivity was achieved by the addition of KOH-modified CNT/CMK3 particles.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.851-854
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• 2004

By approaching the counter electrode to the CNT emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 ms/$cm^2$, which is sufficient for high brightness CNT field emission display, was obtained at the cathode-to-gate voltage of 57 V when the CNT-to-counter electrode gap was 2.2 ${\mu}m$. The gate current was less than 10 % of the anode current. The CNT cathode with low driving voltage can help the cost-effective field emission display implemented.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.2-480.2
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• 2014

Electrochemical capacitors have been the most strong energy storage devices due to high power density and long cycle stability. Pristine carbon nanotubes are promising electrode materials for excellent electrical conductivity and high specific surface area in electrochemical capacitor. However, the practical application of pristine carbon nanotubes was limited by the aggregation into bundles due to van der Waals force. In this research, we explained how multi-walled carbon nanotubes (MWCNT) functionalized by carboxyl, sulfonic, and amine groups (CNT-COOH, CNT-SO3H, CNT-NH2) to improve the performances of MWCNT. Functionalized CNTs showed two- to four-fold increase in capacitance over that of pristine CNTs, while maintaining reasonable cyclic stability. But, the CNT-COOH showed the lowest rate capability of 57% compared to 84%, 86% of CNT-SO3H and CNT-NH2. As demonstrated by the spectroscopic analysis, This reseach showed how surface functional group of carbon nanotubes change capacitor performances.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.179.2-179.2
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• 2014

Carbon nanotubes (CNT)-metal contacts play an important role in nanoelectronics applications such as field-effect transistor (FET) devices. Using Al and (10,0) CNT, we have recently showed that the CNT-metal contacts mediated via topological defects within CNT exhibits intrinsically low contact resistance, thanks to the preservation of the sp2 bonding network at the metal-CNT contacts.[1] It is well-established that metals with good wetting property such as Pd consistently yield good contacts to both metallic and semiconducting CNTs. In this work, the electronic and charge transport properties of the interfaces between capped CNT and Pd will be investigated based on first-principles computations and compared with previous results obtained for the Al electrodes.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.457-462
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• 2017

A linear carbon chain with pure sp hybridization has been intensively studied for the application of its intrinsic electrical properties to electronic devices. Owing to the high chemical reactivity derived from its unsaturated bond, encapsulation by carbon nanotubes (CNT) is provided as a promising method to stabilize the geometry of the linear carbon chain. Although the influence of CNT on the carbon chain has extensively been studied in terms of both electronic structure and geometries, the electron transport properties has not been discussed yet. In this regard, we provide the systematic atomic-scale analyses of the properties of the linear carbon chain within CNT based on a computational approach combining density-functional theory (DFT) and matrix green function (MGF) method. Based on the DFT calculations, the influence of CNT on electronic structures of the linear carbon chain is provided as well as its electrical origin. Via MGF calculations, we also identify the electron transport properties of the carbon chain - CNT complex.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.75-80
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• 2006

We have fabricated a carbon nanotube field emission display(CNT-FED) panel with a 2 inch diagonal size using a screen printing method and in-situ vacuum sealing technology. The field emission properties of CNT FED panel with square-type CNT emitters. As results, the square-characterized and compared with those of the line-type CNT emitters. As results, the square-type CNT emitters showed much larger emission current and more stable I-V characteristics. Light emission started to be occurred at an electric field of 3.5 V/${\mu}m$ corresponding to the anode-cathode voltage of 700 V. The vacuum level inside of the in-situ vacuum sealed panel was obtained with $1.4 {\times} 10^{-5}$ torr. The sealed panel showed the similar I-V characteristics with the unsealed one and the uniform light emission with very high brightness at a current density of $243 {\mu}A/ cm^2$ obtained by the electric field of 10 V/${\mu}m$.