한국정보디스플레이학회:학술대회논문집
- 2004.08a
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- Pages.851-854
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- 2004
Low Voltage-Driven CNT Cathode and It's Applications
- Lee, Chun-Gyoo (Corporate R&D Center, Samsung SDI) ;
- Lee, Sang-Jo (Corporate R&D Center, Samsung SDI) ;
- Cho, Sung-Hee (Corporate R&D Center, Samsung SDI) ;
- Chi, Eung-Joon (Corporate R&D Center, Samsung SDI) ;
- Lee, Byung-Gon (Corporate R&D Center, Samsung SDI) ;
- Jeon, Sang-Ho (Corporate R&D Center, Samsung SDI) ;
- Ahn, Sang-Hyuck (Corporate R&D Center, Samsung SDI) ;
- Hong, Su-Bong (Corporate R&D Center, Samsung SDI) ;
- Choe, Deok-Hyeon (Corporate R&D Center, Samsung SDI)
- Published : 2004.08.23
Abstract
By approaching the counter electrode to the CNT emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 ms/
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