• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.356-357
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• 2005

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.12-14
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP). process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied. aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.385-389
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• 2003

There are four main components of the CMP process: polishing pad, slurry, elastic supporter, and pad conditioner. The polishing pad is an essential component to the reproducibility of polishing uniformity in CMP process. However, the polishing pad in recently using metal CMP raised the several points of high cost caused by the increase of cycle time and the many usage of slurry. It is necessary to develop the novel polishing pad which would lead the cost reduction by the higher pad life-cycle, minimized cycle time and lower slurry usage. The characteristics of polishing pad were studied on the effects of different sets of the Polishing pad, which can be applied to metal chemical mechanical polishing process for global planarization of multilevel interconnection structure. The main purpose of this experiment is cost reduction by the increase of pad life-time, the decrease of cycle time and the lower usage of slurry through the specific hard porous structured pad design. It is confirmed that the novel polishing pad made the slurry usage decrease to 60% as well as the pad life-time increase twice with the 25% improvement of removal rate. The polishing time could be decreased and it also helped the cycle time to diminish. It can be expected that this results will help both the process throughput and the device yield to be improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.37-40
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• Tribology and Lubricants
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• v.38 no.6
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• pp.247-254
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• 2022

Chemical mechanical polishing (CMP) is a hybrid surface-polishing process that utilizes both mechanical and chemical energy. However, the recently emerging semiconductor substrate and thin film materials are challenging to process using the existing CMP. Therefore, previous researchers have conducted studies to increase the material removal rate (MRR) of CMP. Most materials studied to improve MRR have high hardness and chemical stability. Methods for enhancing the material removal efficiency of CMP include additional provision of electric, thermal, light, mechanical, and chemical energies. This study aims to introduce research trends on CMP using ultraviolet (UV) light to these methods to improve the material removal efficiency of CMP. This method, photocatalysis-assisted chemical mechanical polishing (PCMP), utilizes photocatalytic oxidation using UV light. In this study, the target materials of the PCMP application include SiC, GaN, GaAs, and Ru. This study explains the photocatalytic reaction, which is the basic principle of PCMP, and reviews studies on PCMP according to materials. Additionally, the researchers classified the PCMP system used in existing studies and presented the course for further investigation of PCMP. This study aims to aid in understanding PCMP and set the direction of future research. Lastly, since there have not been many studies on the tribology characteristics in PCMP, research on this is expected to be required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.339-342
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• 2003

The corrosion characteristics of Copper by oxidizers in Cu CMP slurry has been investigated. Key experimental variables that has been investigate are the corrosion rate by different oxidizers containing slurry of Cu CMP. Oxidizers in Cu CMP slurry reacts with Cu surfaces to raise the oxidation state of the metal via a reduction-oxidation reaction, resulting in either dissolution of the Cu or the formation of Ta surface film on the metal.[1] When Cu films were corroded adding each oxidizer, corrosion rate increased as much as higher Icorrosion. The corrosion rate of Cu was the largest as added $(NH_4)_2S_2O_8$. The higher content of Urea Hydrogen peroxide was, the higher corrosion rate was measured. Putting in tartaric acid as complexing agent, the corrosion rates of the compounds(Urea hydrogen peroxide+$H_2O_2$) are uniformly. As a result of Cu corrosion by $Cu(NO_3)_2$, the high corrosion rate was determined by even small amounts of $Cu(NO_3)_2$. Consequently, this can be explained by assuming that corrosion by oxidizers has primary effects on the removal rate of Cu and the proper oxidizer needs to be chosen in accordance with relationship of each slurry agent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.65-65
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• 2007

Microstructure and surface roughness of the sensing materials should be improved to use them in advanced sensor applications because the uneven surface roughness degrades the light reflection, pattern resolution, and devices performance. Chemical mechanical polishing (CMP) processing was selected for improving the surface roughness of $CeO_2$ which is one of the well known materials for the oxygen gas sensors. Surface roughness and removal rate of spin coated $CeO_2$ thin films were examined with a change of CMP process parameters such as down force and table speed. The optimized process condition, reflected by the surface roughness with the hillock-free surface as well as the excellent removal rate with the good uniformity, was obtained. The effects of the improved surface roughness on the sensing property of $CeO_2$ thin films were also confirmed. The improved sensitivity of $CeO_2$ thin films for oxygen sensors were obtained after CMP process by the improved surface characteristics. Therefore, we conclude that sensing property of $CeO_2$ thin film is strongly dependent on the surface roughness of $CeO_2$ thin films by using CMP process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.27-28
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• 2011

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.55-55
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.