• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.567-568
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• 2006

To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.42-43
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• 2005

본 연구에서는 Cu 슬러리에 부식방지제인 BTA를 첨가하여 슬러리내의 과수의 농도, pH 의 변화, 연마입자의 종류에 따라 연마거동에 미치는 영향과 각 chemical 변화에 따른 Cu surface의 변화를 살펴보았다. BTA (Benzotriazole, $C_6H_4C_3H$)를 첨가함으로써 본 연구에서 시행된 pH 와 과수의 변화에 상관없이 Cu-BTA film을 형성하여 Cu의 dissolution을 최대한 억제하는 것을 확인할 수 있었다. 또 그로인해 BTA를 첨가하지 않았을 때보다 얇은 passivation layer를 형성함을 알 수 있었고 contact angle도 더 높았다. 연마율의 경우에도 BTA가 첨가됨으로써 감소됨을 확인할 수 있었고 연마입자로 alumina particle을 사용한 경우에는 pH6, 과수 10vol%이상에서는 오히려 연마율이 증가하였다. fumed silica의 경우에는 hardness가 작아 mechanical적인 제거력이 낮아 BTA가 첨가되어도 연마율에는 큰 영향이 없었다.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.47-51
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• 2006

Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A conditioning disk is used during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In this study, we characterized diamond disk with 9 kinds of sample.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.434-437
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• 2005

Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.538-538
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• 2008

금속계열의 박막을 평탄화하기위해서는 슬러리에 함유된 산화제에 의해 부동태층의 형성이 선행되어야 한다. 따라서 본 논문에서는 Copper 박막의 표면을 부동태층으로 형성시키고 CMP공정을 하기위해 산화제에 dipping을 시켰으며 삼화제의 종류는 $H_2O_2$, MSW2000B, $KIO_3$로 하고 dipping 시간은 30초, 60초, 90초, 3분, 10분으로 하여 시간과 산화제 종류에 따른 부동태층의 변화를 연구하였다. 부동태층의 관찰은 FESEM을 이용하여 표면과 단면을 관찰하였고 부동태층의 조성비율은 EDX를 이용하여 조사하였다. MSW 2000B의 경우는 부동태층이 덩어리 모양으로 형성되었으며 포화현상은 3분에 일어났다. 반면에 $H_2O_2$의 경우는 부동태층이 침상 모양으로 형성되었으며 포화현상은 90초에 일어났다. 산화제에 의해 부동태층을 형성시킨 후 POLI-450을 이용하여 평탄화공정을 진행하였으며 CMP공정조건은 부동태층의 연질상태임을 감안하여 헤드 스피드 20rpm, 플레이튼 스피드 10rpm, 슬러리 주입속도 90ml/min, 공정온도는 상온으로 하여 진행하였다. $H_2O_2$를 산화제로 사용하여 dipping을 하고 CMP를 하였을 경우에 균일한 박막을 확보 할 수 있었으며 CMP 공정 후 copper 박막의 균일성은 FESEM을 이용하여 관찰 하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.59-59
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.70-70
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.52-52
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.67-67
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.109-112
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• 2003

Recently, CMP (Chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. Also, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.