• IEIE Transactions on Smart Processing and Computing
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• v.5 no.3
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• pp.164-168
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• 2016

A low insertion-loss, high-isolation switch based on single pole double throw (SPDT) for a 2.4GHz Bluetooth low-energy transceiver is presented in this paper. In order to increase isolation, the body floating technique is implemented. Based on characteristics whereby the ratio of the sizes of the shunt and the series transistors significantly affect the performance of the switches, the device sizes are optimized. A simple matching network is also designed to enhance the insertion loss. Thus, the SPDT switch has high isolation and low insertion loss without increasing the complexity of the circuit. The proposed SPDT is designed and simulated in a complementary metal-oxide semiconductor 65nm process. The switch has a $530{\mu}m{\times}270{\mu}m$ area and achieves 0.9dB, 1.78dB insertion loss and 40dB, 41dB isolation of transmission, reception modes, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.168-174
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• 2012

This paper describes a novel global on-chip interconnect scheme, in which a one UI-delayed symbol as well as the current symbol is sent for easing the sensing operation at receiver end. With this approach, the voltage swing on the channel for reliable sensing can be reduced, resulting in performance improvement in terms of power consumption, peak current, and delay spread due to PVT variations, as compared to the conventional repeater insertion schemes. Evaluation for on-chip interconnects having various lengths in a 130 nm CMOS process indicated that the proposed on-chip interconnect scheme achieved a power reduction of up to 71.3%. The peak current during data transmission and the delay spread due to PVT variations were also reduced by as much as 52.1% and 65.3%, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.232-239
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• 2010

By using the clock timing control at transmitter (TX), the crosstalk-induced jitter (CIJ) is compensated for in the 2-bit parallel data transmission through the coupled microstrip lines on printed circuit board (PCB). Compared to the authors' prior work, the delay block circuit is simplified by combining a delay block with a minimal number of stages and a 3-to-1 multiplexer. The delay block generates three clock signals with different delays corresponding to the channel delay of three different signal modes. The 3-to-1 multiplexer selects one of the three clock signals for TX timing depending on the signal mode. The TX is implemented by using a $0.18\;{\mu}m$ CMOS process. The measurement shows that the TX reduces the RX jitters by about 38 ps at the data rates from 2.6 Gbps to 3.8 Gbps. Compared to the authors' prior work, the amount of RX Jitter reduction increases from 28 ps to 38 ps by using the improved implementation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.702-712
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• 2016

A wrist watch type wearable cardiovascular monitoring device is proposed for continuous and convenient monitoring of the patient's cardiovascular system. For comprehensive monitoring of the patient's cardiovascular system, the concurrent electrocardiogram (ECG) and arterial pulse wave (APW) sensor front-end are fabricated in $0.18{\mu}m$ CMOS technology. The ECG sensor frontend achieves 84.6-dB CMRR and $2.3-{\mu}Vrms$-input referred noise with $30-{\mu}W$ power consumption. The APW sensor front-end achieves $3.2-V/{\Omega}$ sensitivity with accurate bio-impedance measurement lesser than 1% error, consuming only $984-{\mu}W$. The ECG and APW sensor front-end is combined with power management unit, micro controller unit (MCU), display and Bluetooth transceiver so that concurrently measured ECG and APW can be transmitted into smartphone, showing patient's cardiovascular state in real time. In order to verify operation of the cardiovascular monitoring system, cardiovascular indicator is extracted from the healthy volunteer. As a result, 5.74 m/second-pulse wave velocity (PWV), 79.1 beats/minute-heart rate (HR) and positive slope of b-d peak-accelerated arterial pulse wave (AAPW) are achieved, showing the volunteer's healthy cardiovascular state.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.22-28
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• 2009

This paper presents a fast received signal strength indicator (RSSI) circuit for wireless communication application. The proposed circuit is developed using power detectors and an analog-to-digital converter to achieve a fast settling time. The power detector is consisted of a novel logarithmic variable gain amplifier (VGA), a peak detector, and a comparator in a closed loop. The VGA achieved a wide logarithmic gain range in a closed loop form for stable operation. For the peak detector, a fast settling time and small ripple are obtained using the orthogonal characteristics of quadrature signals. In $0.18-{\mu}m$ CMOS process, the RSSI value settles down in $20{\mu}s$ with power consumption of 20 mW, and the maximum ripple of the RSSI is 30 mV. The proposed RSSI circuit is fabricated with a personal handy-phone system transceiver. The active area is $0.8{\times}0.2\;mm^2$.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.6
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• pp.63-69
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• 2008

Reconfigurable RF one-chip solutions have been researched with the objective of designing for smaller-sized and more economical RF transceiver and it can be applied to a vehicular wireless terminal. The proposed voltage-controlled oscillator satisfies the targeted frequency range ($4.2{\sim}5.4\;GHz$) and the frequency planning which correspond to the standards such as CDMA(IS-95), PCS, GSM850, EGSM, WCDMA, WLAN, Bluetooth, WiBro, S-DMB, DSRC, GPS, and DVB-H/DMB-H/L(L Band). In order to improve phase noise performance, PMOS is adopted in the cross-coupled pair, the tail current source and MOS varactor in this VCO and differential-typed switching is proposed in capacitor array. Based on the measurement results, a total power dissipation is $5.3{\sim}6.0\;mW$ at 1.8 V power supply voltage. The oscillator is tuned from 4.05 to 5.62 GHz; The tuning range is 33%. The phase noise is -117.16 dBc/Hz at 1 MHz offset frequency and the FOM (Figure Of Merit) is $-180.84{\sim}-180.5$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.93-100
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• 2009

This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power 3.3V input voltage is boosted by DC-DC Converter to $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$ output voltage With 10MHz switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is $2.8{\times}2.1mm^2$ including pads and the power consumption is 7.52mW, 7.82mW, 8.61mW.