• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.425-435
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• 2016

This paper describes a spread-spectrum clock generation method by utilizing a ${\Delta}{\Sigma}$ digital PLL (DPLL) which is solely based on binary phase detection and does not require a linear time-to-digital converter (TDC) or other linear digital-to-time converter (DTC) circuitry. A 1-bit high-order ${\Delta}{\Sigma}$ modulator and a hybrid finite-impulse response (FIR) filter are employed to mitigate the phase-folding problem caused by the nonlinearity of the bang-bang phase detector (BBPD). The ${\Delta}{\Sigma}$ DPLL employs a two-point modulation technique to further enhance linearity at the turning point of a triangular modulation profile. We also show that the two-point modulation is useful for the BBPLL to improve the spread-spectrum performance by suppressing the frequency deviation at the input of the BBPD, thus reducing the peak phase deviation. Based on the proposed architecture, a 3.2 GHz spread-spectrum clock generator (SSCG) is implemented in 65 nm CMOS. Experimental results show that the proposed SSCG achieves peak power reductions of 18.5 dB and 11 dB with 10 kHz and 100 kHz resolution bandwidths respectively, consuming 6.34 mW from a 1 V supply.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.427-435
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• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

• Imaging Science in Dentistry
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• 제40권4호
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• pp.155-158
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• 2010

Digital radiographic systems allow the implementation of a fully digital picture archiving and communication system (PACS), and provide the greater dynamic range of digital detectors with possible reduction of X-ray exposure to the patient. This article reviewed the basic physical principles of digital radiographic imaging system in dental clinics generally. Digital radiography can be divided into computed radiography (CR) and direct radiography (DR). CR systems acquire digital images using phosphor storage plates (PSP) with a separate image readout process. On the other hand, DR systems convert X-rays into electrical charges by means of a direct readout process. DR systems can be further divided into direct and indirect conversion systems depending on the type of X-ray conversion. While a direct conversion requires a photoconductor that converts X-ray photons into electrical charges directly, in an indirect conversion, lightsensitive sensors such as CCD or a flat-panel detector convert visible light, proportional to the incident X-ray energy by a scintillator, into electrical charges. Indirect conversion sensors using CCD or CMOS without lens-coupling are used in intraoral radiography. CR system using PSP is mainly used in extraoral radiographic system and a linear array CCD or CR sensors, in panoramic system. Currently, the digital radiographic system is an important subject in the dental field. Most studies reported that no significant difference in diagnostic performance was found between the digital and conventional systems. To accept advances in technology and utilize benefits provided by the systems, the continuous feedback between doctors and manufacturers is essential.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.861-862
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• 2015

In this paper we present a low area 12-bit SAR ADC (Successive Approximation Register Analog-to-Digital Converter). The proposed circuit is fabricated using Magnachip/SK Hynix 1-Poly 6-Metal $0.18-{\mu}m$ CMOS process, and it is powered by a 1.8-V supply. Total chip area is reduced by replacing the MIM capacitors with MOS capacitors instead of the capacitors consisting of overall part in chip area. The proposed circuit showed improved power dissipation of 1.9mW, and chip area of $0.45mm^2$ as compared to conventional research results at the power supply of 1.8V. The designed circuit also showed high SNDR (Signal-to-Noise Distortion Ratio) of 70.51dB, and excellent effective number of bits of 11.4bits.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.1005-1008
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• 2007

In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. In this study, our design only used two OPAMPs and low resistance RDACs without increasing the quiescent current. Thus, it was experted that chip would be more in consuming lower static power for longer battery lifetime. The source driver were implemented by the 3.3 V $0.35\;{\mu}m$ CMOS technology provided by TSMC. The area of the core OPAMP circuit was about $110\;{\mu}m\;{\times}\;150\;{\mu}m$ and that of the source driver was $880\;{\mu}m\;{\times}\;430\;{\mu}m$. As compared to the conventional structure, approximately 64.48 % in area was achieved.

• 대한전자공학회논문지SD
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• 제44권9호
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• pp.40-47
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• 2007

제한적인 자원을 갖는 임베디드 시스템을 위한 영상처리 하드웨어 설계 시 메모리의 효율적인 구성은 필수적으로 고려할 사항이다. 특히 필터를 이용한 얼굴 검출 하드웨어는 필터와 입력영상을 저장하기 위해 많은 양의 메모리가 소요되기 때문에 효율적인 메모리 구성이 필요하다. 따라서 본 논문은 일반적인 필터방식의 알고리즘을 하드웨어 설계에 적절하도록 보완하여 하드웨어로 설계하였다. 설계된 하드웨어는 알고리즘 특성에 맞추어 적은 양의 내부 메모리를 사용하면서 한번 외부 메모리로부터 읽은 데이터를 다시 읽지 않도록 구성하였고, 데이터 양이 많아 외부 메모리에 저장되어 있는 필터를 효율적으로 사용하기 위해 필터의 일부를 내부 메모리로 복사하는 구조로 설계하였다. 또한 빠른 연산을 위해 여러 클럭이 소모되는 데이터 패스를 파이프라인 구조를 적용하여 연속적으로 메모리 데이터를 읽을 수 있는 구조로 설계하였다. 본 하드웨어는 xilinx 및 ARM 기반의 FPGA 환경에서 검증한 결과 1초에 25 프레임 처리가 가능하며 40KB의 내부 메모리를 사용하였고 삼성 0.18um공정을 이용하여 칩으로 제작 중이다.

• 전기전자학회논문지
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• 제15권4호
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• pp.330-338
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• 2011

본 논문에서는 다중 스위치를 이용한 전류모드 벅-부스트 컨버터의 벅-부스트 컨버터를 제안하였다. 제안한 컨버터는 넓은 출력 전압 범위와 높은 전류 레벨에서 높은 전력 변환 효율을 갖기 위해 PWM 제어법을 이용하였다. 제안한 컨버터는 최대 출력전류 300mA, 입력 전압 3.3V, 출력 전압 700mV~12V, 1.5MHz의 스위칭 주파수, 최대효율 90% 갖는다. 또한, dc-dc 컨버터의 신뢰성과 성능을 향상시키기 위해 보호회로를 추가하였다. 그리고 Deep-submicron 공정 기술을 이용한 ESD 보호회로를 제안하였다. 제안된 보호회로는 게이트-기판 바이어싱 기술을 이용하여 낮은 트리거 전압을 구현하였다. 시뮬레이션 결과는 일반적인 ggnmos의 트리거 전압(8.2V) 에 비해 고안된 소자의 트리거 전압은 4.1V 으로 더 낮은 트리거 전압 특성을 나타냈다.

• 한국전자통신학회논문지
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• 제13권4호
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• pp.721-728
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• 2018

본 논문은 다양한 구조의 선형 블록 오류정정코드를 소개하고, 이를 회로로 구현하여 비교 분석한 결과를 보여주고 있다. 메모리 시스템에서는 잡음 전력으로 인한 비트 오류를 방지하기 위해 ECC(: Error Correction Code)가 사용되어 왔다. ECC의 종류에는 SEC-DED(: Single Error Correction Double Error Detection)와 SEC-DED-DAEC(: Double Adjacent Error Correction)가 있다. SEC-DED인 Hsiao 코드와 SEC-DED-DAEC인 Dutta, Pedro 코드를 각각 Verilog HDL을 이용해 설계 후 $0.35{\mu}m$ CMOS 공정을 사용해 회로로 합성하였다. 시뮬레이션에 의하면 SEC-DED회로는 인접한 두 개의 비트 오류를 정정하지 못하지만 적은 회로 사용면적과 빠른 지연 시간의 장점이 있으며, SEC-DED-DAEC 회로의 경우 Pedro 코드와 Dutta 코드 간에는 면적, 지연 시간의 차이가 없으므로 오류 정정률이 개선된 Pedro 코드를 사용하는 것이 더 효율적임을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• 센서학회지
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• 제19권4호
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• pp.306-312
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• 2010

We have detected deoxynivalenol(DON) using a metal-oxide-semiconductor field-effect-transistor(MOSFET)-based biosensor. The MOSFET-based biosensor is fabricated by a standard complementary metal-oxide-semiconductor(CMOS) process, and the biosensor's electrical characteristics were investigated. The output of the sensor was stabilized by employing a reference electrode that applies a fixed bias to the gate. Au which has a chemical affinity for thiol was used as the gate metal to immobilize a self-assembled monolayer(SAM) made of 16-mercaptohexadecanoic acid(MHDA). The SAM was used to immobilize anti-deoxynivalenol antibody. The carboxyl group of the SAM was bound to the anti- deoxynivalenol antibody. Anti-deoxynivalenol antibody and deoxynivalenol were bound by an antigen-antibody reaction. In this study, it is confirmed that the MOSFET-based biosensor can detect deoxynivalenol at concentrations as low as 0.1 ${\mu}g$/ml. The measurements were performed in phosphate buffered saline(PBS; pH 7.4) solution. To verify the interaction among the SAM, antibody, and antigen, surface plasmon resonance(SPR) measurements were performed.