• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.29-34
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• 2017

A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

• ETRI Journal
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• v.30 no.4
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• pp.516-525
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• 2008

This paper proposes a compact, energy-efficient, and smart gas sensor platform technology for ubiquitous sensor network (USN) applications. The compact design of the platform is realized by employing silicon-on-insulator (SOI) technology. The sensing element is fully integrated with SOI CMOS circuits for signal processing and communication. Also, the micro-hotplate operates at high temperatures with extremely low power consumption, which is important for USN applications. ZnO nanowires are synthesized onto the micro-hotplate by a simple hydrothermal process and are patterned by a lift-off to form the gas sensor. The sensor was operated at $200^{\circ}C$ and showed a good response to 100 ppb $NO_2$ gas.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.287-290
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• 2009

무선 통신 기술과 하드웨어의 발전으로 인해 무선 센서 네트워크를 위한 센서 노드들은 저전력화 및 소형화되었고, 사용 목적에 따라 많은 연구가 진행되고 있다. 최근 들어서는 온도나 가속도 등의 간단한 정보뿐만 아니라 이미지를 센싱할 수 있는 초소형 카메라 등을 이용한 멀티미디어 센서 네트워크에 대한 연구도 활발히 이루어지고 있다. 이미지 센싱에 있어서는 CCD Sensor에 비해 적은 전력을 소모하고 빠른 전송에 적합한 CMOS Sensor가 최근의 연구에 이용되고 있다. 이러한 추세에서 실시간의 데이터 검출을 위한 센서와 네트워크의 기능이 통합된 프로세서 구조의 기능이 요구되고 있다. 기존의 무선 이미지 전송 기술을 살펴보면 범용성 제어의 사용으로 데이터의 전송 처리를 위한 대역폭이 제한되고, 내부 메모리 또한 적은 용량으로 제한되어 있다. 한 예로 JPEG으로 압축된 이미지라도 데이터의 크기가 수 Kbytes에 이르기 때문에 전체 데이터를 한 번에 전송받지 못해 전송 속도나 패킷 정확도에 있어 효율이 떨어지게 된다. 따라서 실시간의 데이터의 전송에는 부족한 면이 있다. 본 논문에서는 CMOS Sensor Module을 이용하여 RT-WISN을 구성하였다. 구성된 센서 네트워크를 통하여 Peer to Peer에서 이미지의 데이터 크기에 따른 전송 시간을 측정하고 RT-WISN이 실시간 전송에 적합함을 보인다.

• IT SoC Magazine
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• s.13
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• pp.36-36
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• 2006

• Journal of IKEEE
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• v.23 no.3
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• pp.858-864
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• 2019

A clock system is proposed to eliminate data loss due to frequency difference between sensor nodes in a sensor utility network. The proposed clock system for each sensor node consists of a bust clock-data recovery (CDR) circuit, a digital phase-locked loop outputting a 32-phase clock, and a digital frequency synthesizer using a programmable open-loop fractional divider. A CMOS oscillator using an active inductor is used instead of a burst CDR circuit for the first sensor node. The proposed clock system is designed by using a 65 nm CMOS process with a 1.2 V supply voltage. When the frequency error between the sensor nodes is 1%, the proposed burst CDR has a time jitter of only 4.95 ns with a frequency multiplied by 64 for a data rate of 5 Mbps as the reference clock. Furthermore, the frequency change of the designed digital frequency synthesizer is performed within one period of the output clock in the frequency range of 100 kHz to 320 MHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.17-22
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• 2001

The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.469-474
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• 2010

This paper presents a 10Gbps CMOS parallel-to-serial converter for transmission of sensor data. A low-noise clock multiplying unit(CMU) and a multiplexer with controllable data sequence are proposed. The transmitter was fabricated in 0.13 um CMOS process and the measured total output jitter was less than 0.1 UIpp(unit-interval, peak-to-peak) over 20 kHz to 80 MHz bandwidth. The jitter of the CMU output only was measured as 0.2 ps,rms. The transmitter dissipates less than 200 mW from 1.5 V/2.5 V power supplies.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.513-521
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• 2007

Recently, camera function is one of the most primary functions out of the multimedia capabilities in the small mobile terminals. But, it has been difficult for implementing embedded devices with low cost because of not supporting camera interface in many SoCs. Thus, this paper presents a method of supporting camera function with ease for embedded devices which has not camera interface. For this purpose, the interface is implemented for a CMOS image sensor. The method is also provided that CIS(CMOS Image Sensor) is supported in the embedded system by programming the device driver.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.9
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• pp.2081-2086
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• 2015

The temperature sensor using ring oscillator is designed by 0.18㎛ CMOS process and the supply voltage is 1.5volts. The temperature sensor is designed by using temperature-independent and temperature-dependent ring oscillators and the output frequency of temperature-independent ring oscillator is constant with temperature and the output frequency of temperature-dependent ring oscillator decreases with increasing temperature. To convert the temperature to a digital value the output signal of temperature-independent ring oscillator is used for the clock signal and the output signal of temperature-dependent ring oscillator is used for the enable signal of counter. From HSPICE simulation results, the temperature error is less than form -0.7℃ to 1.0℃ when the operating temperature is varied from -20℃ to 70℃.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.57-60
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• 2009

We consider introducing an optical thin film to the light guiding wall of a pixel in order to enhance the light guiding efficiency of a CMOS image sensor. Simulating the reflectance as a function of the incidence angle using the Essential Macleod program, we find that the range of total internal reflection is greatly increased for several materials. Particularly when air is chosen as the thin film material, the critical angle of total internal reflection could be shifted to about 50 degrees.