• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.4
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• pp.454-460
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• 2016

Unlike conventional visible light communications (VLC) adopting photo detectors (PD), optical camera communications (OCC) employs cameras in detecting the transmitted data. Especially, the data rate of OCC can be enhanced by using the principle of rolling-shutter, which is the operating scheme of a CMOS image sensor. In this study, we consider a novel OCC system for high-speed real time video processing to transmit high speed data from LED and to acquire image utilizing rolling-shutter effect of CMOS image sensor. Also, we demonstrate the improved performance of proposed system using a test-bed.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.19-26
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• 2007

This study was focused on the feasibility of ultrasonic bonding of Au flip chip bumps for a practical complementary metal oxide semiconductor (CMOS) image sensor with electroplated Au substrate. The ultrasonic bonding was carried out with different bonding pressures and times after the atmospheric pressure plasma cleaning, and then the die shear test was performed to optimize the ultrasonic bonding parameters. The bonding pressure and time strongly affected the bonding strength of the bumps. The Au flip chip bumps were successfully bonded with the electroplated Au substrate at room temperature, and the bonding strength reached approximate 73 MPa under the optimum conditions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.65-70
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• 2006

An image sensor has limited dynamic range while the human eye has logarithmic response over wide range of light intensity. Although the sensor gain can be set high to identify details in darker area on the image, this results in saturation in brighter area. The gamma correction is essential to fit the human eye response. However, the digital gamma correction degrades image quality especially for darker area on the image due to the limited ADC resolution and the dynamic range. This Paper proposes a CMOS image sensor (CIS) with a nonlinear analog-to-digital converter (AU) which performs analog gamma correction. The CIS with the proposed nonlinear analog-to-digital conversion scheme was fabricated with a $0.35{\mu}m$ CMOS process. The analog gamma correction using the proposed nonlinear ADC CIS provides the 2.2dB peak-signal-to-noise-ratio(PSM) improved image qualify than conventional digital gamma correction. The PSNR of the image obtain from the digital gamma correction is 25.6dB while it is 27.8dB for analog gamma correction. The PSNR improvement over digital gamma correction is about $28.8\%$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.221-224
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• 2012

This paper presents a CMOS interface circuit for MEMS acceleration sensor. It consists of a capacitance to voltage converter(CVC), a second-order switched-capacitor (SC) integrator and comparator. A bandgap reference(BGR) has been designed to supply a stable bias to the circuit and a ${\Sigma}{\Delta}$ Modulator with chopper - stabilization(CHS) has also been designed for more suppression of the low frequency noise and offset. As a result, the output of this ${\Sigma}{\Delta}$ Modulator increases about 10% duty cycle when the input voltage amplitude increases 100mV and the sensitivity is x, y-axis 0.45v/g, z-axis 0.28V/g. This work is designed and implemented in a 0.35um CMOS technology with a supply voltage of 3.3V and a sampling frequency of 3MHz sampling frequency. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.8-16
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• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for column-parallel analog-to-digital converter (ADC) array used in a low noise CMOS image sensor. The proposed modulator implements two switched capacitor integrators and a single-bit comparator within only 10-㎛ column-pitch for column-parallel ADC array. Also, peripheral circuits for driving all column modulators include a non-overlapping clock generator and a bias circuit. The proposed delta-sigma modulator has been implemented in a 110-nm CMOS process. It achieves 88.1-dB signal-to-noise-and-distortion ratio (SNDR), 88.6-dB spurious-free dynamic range (SFDR), and 14.3-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 418 for 12-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 970×10 ㎛2 and 248 ㎼, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.64-69
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• 2013

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two-step single-slope A/D converter is proposed. The A/D converter is composed of both a 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D converter. In order to have a small noise characteristics, further, a Digital Correlated Double Sampling(D-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35mW at 3.3V supply voltage. The measured conversion speed is 10us, and the frame rate is 220 frames/s.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.155-159
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• 2017

The analog-to-digital converter (ADC) is an important component in various fields of sensor signal processing. This paper presents an expandable flash analog-to-digital converter (E-flash ADC) for sensor signal processing using a comparator, a subtractor, and a multiplexer (MUX). The E-flash ADC was simulated and designed in $0.35-{\mu}m$ standard complementary metal-oxide semiconductor (CMOS) technology. For operating the E-flash ADC, input voltage is supplied to the inputs of the comparator and subtractor. When the input voltage is lower than the reference voltage, it is outputted through the MUX in its original form. When it is higher than the reference voltage, the reference voltage is subtracted from the input value and the resulting voltage is outputted through the MUX. Operation of the MUX is determined by the output of the comparator. Further, the output of the comparator is a digital code. The E-flash ADC can be expanded easily.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.103-106
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• 2005

This paper reports design and fabrication of CMOS temperature sensor circuit using MOSIS 0.25um CMOS technology. The proposed circuit has a temperature coefficient of $13mV/^{\circ}C$ for a wide operating temperature range with a good linearity. This circuit may be applicable to the design of one-chip IC where quartz crystal resonator is directly mounted on CMOS oscillator chips.

• Journal of IKEEE
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• v.9 no.1 s.16
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• pp.57-64
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• 2005

This paper presents a built-in current sensor(BICS) that detects defects in CMOS integrated circuits using the current testing technique. This circuit employs a cross-coupled connected PMOS transistors, it is used as a current comparator. The proposed circuit has a negligible impact on the performance of the circuit under test (CUT) and high speed detection time. In addition, in the operation of the normal mode, the BlCS does not have dissipation of extra power, and it can be applied to the deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The area overhead of a BlCS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS standard technology.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.465-471
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• 2023

This paper proposes a comparator structure that improves the noise and output delay of a single-slope ADC(SS-ADC) used in CMOS Image Sensor (CIS). To improve the noise and delay characteristics of the output, a comparator structure using the miller effect is designed by inserting a capacitor between the output node of the first stage and the output node of the second stage of the comparator. The proposed comparator structure improves the noise, delay of the output, and layout area by using a small capacitor. The CDS counter used in the single slop ADC is designed using a T-filp flop and bitwise inversion circuit, which improves power consumption and speed. The single-slope ADC also performs dual CDS, which combines analog correlated double sampling (CDS) and digital CDS. By performing dual CDS, image quality is improved by reducing fixed pattern noise (FPN), reset noise, and ADC error. The single-slope ADC with the proposed comparator structure is designed in a 0.18-㎛ CMOS process.