• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.35-41
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• 2013

An efficient multi-stage rectifier for wireless power transfer in deep implant medical devices is implemented using $0.18-{\mu}m$ CMOS technology. The presented three-stage rectifier employs a cross-coupled topology to boost a small input AC signal from the external device to produce a 1.2-1.5 V output DC signal for the implant device. The designed rectifier achieves a maximum measured power conversion efficiency of 70% at 13.56 MHz under the conditions of a low 0.6-Vpp RF input signal with a $10-k{\Omega}$ output load resistance.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.237-240
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• 2004

In this paper, a CMOS bridge rectifier for HF and microwave RFID systems is presented. The proposed RFID CMOS bridge rectifier is designed with two NMOSs and two PMOSs whose gates are connected to the antenna, and it is operated as a full wave bridge rectifier. The simulation results obtained with SPICE show the well rectified and high enough DC output voltages for the operating frequencies of 13.56 MHz, 915 MHz, and 2.45 GHz which are used in various RFID systems. The obtained DC output voltages are sufficiently high for driving the low power microchip in RFID transponder for the frequency range of HF and microwave.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.103-107
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• 2006

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.34-42
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• 2012

In this paper, a wide-input range CMOS multi-mode rectifier for wireless power transfer system is presented. The output voltage of multi-mode rectifier is sensed by comparator and switches are controlled based on it. The mode of multi-mode rectifier is automatically selected by the switches among full-wave rectifier, 1-stage voltage multiplier and 2-stage voltage multiplier. In full-wave rectifier mode, the rectified output DC voltage ranges from 9 V to 19 V for a input AC voltage from 10 V to 20 V. However, the input-range of the multi-mode rectifier is more improved than that of the conventional full-wave rectifier by 5V, so the rectified output DC voltage ranges from 7.5 V to 19 V for a input AC voltage from 5 V to 20 V. The power conversion efficiency of the multi-mode rectifier is 94 % in full-wave rectifier mode. The proposed multi-mode rectifier is fabricated in a $0.35{\mu}m$ CMOS process with an active area of $2500{\mu}m{\times}1750{\mu}m$.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.56-62
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• 2013

We present a rectifier for wireless power transmission using multiplier configuration in layout for MOSFETs which works at 13.56 MHz, designed to fit in CMOS process where conventionally used diodes are replaced with the cross-coupled MOSFETs. Full bridge rectifier structure without comparators is employed to reduce current consumption and to be working up to higher frequency. Multiplier configuration designed in layout reduces time delay originated from parasitic series resistance and shunt capacitance at each finger due to long connecting layout, leading to fast transition from on-state to off-state cross-coupled circuit structure and vice versa. The power conversion efficiency is significantly increased due to this fast transition time. The rectifier is fabricated in $0.11{\mu}m$ CMOS process, RF to DC power conversion efficiency is measured as 86.4% at the peak, and this good efficiency is maintained up to 600 MHz, which is, to our best knowledge, the highest frequency based on cross-coupled configuration.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.4
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• pp.1789-1796
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• 2012

In this paper, a new high-efficiency CMOS bridge rectifier for driving RFID tag chips is designed and analyzed. The input stage of the proposed rectifier is designed as a cascade structure connected with two NMOSs for reducing the gate capacitance by circuitry method, which is the main path of the leakage current that is increased when the operating frequency is increased. This gate capacitance reduction technique using the cascade input stage for reducing the gate leakage current is presented theoretically. The output characteristics of the proposed rectifier are derived analytically using its high frequency small-signal equivalent circuit. For the general load resistance of $50K{\Omega}$, the proposed rectifier shows better power conversion efficiencies of 28.9% for 915MHz UHF (for ISO 18000 -6) and 15.3% for 2.45GHz microwave (for ISO 18000-4) than those of 26.3% and 26.8% for 915MHz, and 13.2% and 12.6% for 2.45GHz of compared other two existing rectifiers. Therefore, the proposed rectifier may be used as a general purpose rectifier to drive tag chips for various RFID systems.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.2
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• pp.304-309
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• 2019

This paper presents a CMOS RF-to-DC converter for video surveillance disposable IoT applications. It widely harvests RF energy of 3G/4G cellular low-band frequency range by employing a tunable impedance matching network. The proposed converter consists of the differential-drive cross-coupled rectifier and the matching network with a 4-bit capacitor array. The proposed converter is designed using 130-nm standard CMOS process. The designed energy harvester can rectify the RF signals from 700 MHz to 900 MHz. It has a peak RF-to-DC conversion efficiency of 72.25%, 64.97%, and 66.28% at 700 MHz, 800 MHz, and 900 MHz with a load resistance of 10kΩ, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.278-281
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• 2014

This paper presents the performance comparison of three types of full-wave rectifiers for vibration energy harvesting. The first rectifier is consisted of two active diodes and two MOSFETs, and the comparators of the active diodes are powered from the output of the rectifier. The second one is a 2-stage full-wave rectifier. It comprises the basic rectifier consisted of four MOSFETs and an active diode. The comparator is also powered from the output of the rectifier. The third one is an input powered rectifier. It has the same structure as the second rectifier, but the comparator is powered from the input of the rectifier. These rectifiers have been designed using a 0.35um CMOS process and their performances have been compared through simulations. In terms of efficiency, the first rectifier shows the best performance at heavy loads, but the second one is suitable at light loads. When the power consumption during absence of vibration is more important than efficiency, the input-powered rectifier is proper.

• Journal of IKEEE
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• v.22 no.2
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• pp.393-401
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• 2018

In this paper, a rectifier for WPC / A4WP wireless power transmission is designed. The proposed rectifier supports both WPC (Wireless Power Consortium) and A4WP (Alliance For Wireless Power) and is designed with full-bridge rectifier. WPC transmits power at the frequency of 100kHz to 205kHz and A4WP at the frequency of 6.75MHz. Since the bridge rectifier uses a MOSFET instead of a diode, the reverse current flows and the efficiency is affected if the output voltage is higher than the input voltage. Therefore, we added the reverse current detector that detects the current flowing through the MOSFET and shut off the reverse current. The frequency discriminator is used because the rectifier has different frequency band. The proposed rectifier was designed using $0.35{\mu}m$ CMOS high voltage process. The input voltage is up to 18V and the rectifier operates at 100kH to 205kHz, 6.78MHz frequency. The maximum efficiency is 94.8% and the maximum power transfer is 5.78W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.10
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• pp.932-935
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• 2015

This paper proposes a rectifier using bootstrapping and active body biasing in $0.11{\mu}m$ RF CMOS process. The proposed rectifier employs the full-wave rectifying structure with cross coupling and increases the power conversion efficiency by reducing the threshold voltage and leakage current using bootstrapping and active bias biasing. Also, it has been designed to be applied to a wide range of applications from 13.56 MHz used in wireless power transmission to 915 MHz used in RFID. As a measured result, 80 % of power conversion efficiency is obtained when the input power is 0 dBm at $10k{\Omega}$ load resistance and 13.56 MHz. Also 40 % of power conversion efficiency is shown in 915 MHz.