• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.236-242
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• 2021

In this paper, we report the fabrication of the tip-on-gate of a field-effect-transistor (ToGoFET) probe using a standard complementary metal-oxide-semiconductor (CMOS) process and the performance evaluation of the fabricated probe. After the CMOS process, I-V characteristic measurement was performed on the reference MOSFET. We confirmed that the ToGoFET probe could be operated at a gate voltage of 0 V due to channel ion implantation. The transconductance at the operating point (Vg = 0 V, Vd = 2 V) was 360 ㎂/V. After the fabrication process was completed, calibration was performed using a pure metal sample. For sensitivity calibration, the relationship between the input voltage of the sample and the output current of the probe was determined and the result was consistent with the measurement result of the reference MOSFET. An oxide sample measurement was performed as an example of an application of the new ToGoFET probe. According to the measurement, the ToGoFET probe could spatially resolve a hundred nanometers with a height of a few nanometers in both the topographic image and the ToGoFET image.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.112-119
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• 2006

Resolution of an image sensor is very significant parameter to improve. It is hard to improve the resolution of the CMOS vision chip for edge detection based on a biological retina using a resistive network because the vision chip contains additional circuits such as a resistive network and some processing circuits comparing with general image sensors such as CMOS image sensor (CIS). In this paper, we proved the problem of low resolution by separating photo-sensing and signal processing circuits. This type of vision chips occurs a problem of low operation speed because the signal processing circuits should be commonly used in a row of the photo-sensors. The low speed problem of operation was proved by using a reset decoder. A vision chip for edge detection with $128{\times}128$ pixel array has been designed and fabricated by using $0.35{\mu}m$ 2-poly 4-metal CMOS technology. The fabricated chip was integrated with optical lens as a camera system and investigated with real image. By using this chip, we could achieved sufficient edge images for real application.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.330-336
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.5
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• pp.999-1004
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• 2012

In this paper, camera modules and lens's images were analyzed for the compensation of distortion image by wide angle lens based WDR(Wide Dynamic Range) with high resolution sensor(2-Mega CMOS Image sensor). Due to wide angle ($176^{\circ}$) of designed wide angle camera modules, the compensation result of distorted image was analyzed, and the application of these modules was proposed for smart NUX(Natural User eXprience).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.154-157
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• 2004

A realization for the wireless transmission system on the Un image using embedded server is presented on the paper to be simply to omni-direction data acquisition. The embedded system is composed of the image data acquisition which has CMOS sensor and lame grabber, the embedded server that takes the wireless LAN target board, and client part that is monitoring the image from the embedded server. The experiment result is average 12.7fps in 8bit on the 320$\times$240, 4:2:2 YCbCr. The system enable images transmission to be soft . monitoring.

• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

• The Magazine of the IEIE
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• v.40 no.6
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• pp.73-85
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• 2013

• The Magazine of the IEIE
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• v.36 no.2
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• pp.36-43
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• 2009

• The Magazine of the IEIE
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• v.42 no.1
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• pp.67-77
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• 2015

• The Bulletin of The Korean Astronomical Society
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• v.25 no.1
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• pp.50-50
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• 2000