• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.127-132
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• 2019

In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (< $400^{\circ}C$) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.

• Journal of Semiconductor Engineering
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• v.2 no.2
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• pp.130-135
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• 2021

Recently, deep neural networks (DNNs) are actively used for action control so that an autonomous system, such as the robot, can perform human-like behaviors and operations. Unlike recognition tasks, the real-time operation is essential in action control, and it is too slow to use remote learning on a server communicating through a network. New learning techniques, such as reinforcement learning (RL), are needed to determine and select the correct robot behavior locally. In this paper, we propose an energy-efficient DNN processor with a LUT-based processing engine and near-zero skipper. A CNN-based facial emotion recognition and an RNN-based emotional dialogue generation model is integrated for natural HRI system and tested with the proposed processor. It supports 1b to 16b variable weight bit precision with and 57.6% and 28.5% lower energy consumption than conventional MAC arithmetic units for 1b and 16b weight precision. Also, the near-zero skipper reduces 36% of MAC operation and consumes 28% lower energy consumption for facial emotion recognition tasks. Implemented in 65nm CMOS process, the proposed processor occupies 1784×1784 um2 areas and dissipates 0.28 mW and 34.4 mW at 1fps and 30fps facial emotion recognition tasks.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.65-73
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• 1986

Experiment have been conducted about thin oxide characteristics according to O2/N2 ratio needed for EEPROM cell fabrication. As a result, we think that there is no problem even if we grow oxide layer with large O2/N2 ratio and short exidation time and when the water is implated by As before oxidation, the oxide breakdown field is about IMV/cm lower than that is not implanted. Especially, the thin oxide characteristic seems to be affected largely by wafer cleaning and oxidation in air. On the basis of these, tunnel type EEPROM cell is fabricated by 3um CMOS process and its characteristic is studied. Tunnel oxide thickness(100\ulcorner is chosen to allow Fowler-Nordheim tunneling to charge the floating gate at the desired programming voltage and tunnel area(2x2um\ulcorneris chosen to increase capacitive coupling ratio. For program operation, high voltage (20-22V) is applied to the control gate, while both drain and source are gdrounded. The drain voltage for erase is 16V. It is shown that charge retention characteristics is not limited by leakage in the oxide and program/erase endurance is over 10E4 cycles of program erase operation.

• Journal of Sensor Science and Technology
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• v.31 no.3
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• pp.151-155
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• 2022

In this paper, we present a highly-sensitive gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector using multi-finger structure whose photocurrent increases in proportion to the number of fingers. The drain current that flows through a MOSFET using multi-finger structure is proportional to the number of fingers. This study intends to confirm that the photocurrent of a GBT MOSFET-type photodetector that uses the proposed multi-finger structure is larger than the photocurrent per unit area of the existing GBT MOSFET-type photodetectors. Analysis and measurement of a GBT MOSFET-type photodetector that utilizes a multi-finger structure confirmed that photocurrent increases in ratio to the number of fingers. In addition, the characteristics of the photocurrent in relation to the optical power were measured. In order to determine the influence of the incident the wavelength of light, the photocurrent was recorded as the incident the wavelength of light varied over a range of 405 to 980 nm. A highly-sensitive GBT MOSFET-type photodetector with multi-finger structure was designed and fabricated by using the Taiwan semiconductor manufacturing company (TSMC) complementary metal-oxide-semiconductor (CMOS) 0.18 um 1-poly 6-metal process and its characteristics have been measured.

• International journal of advanced smart convergence
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• v.12 no.4
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• pp.44-54
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• 2023

This paper provides a comprehensive analysis of the implications of the metaverse on the music industry, focusing on copyright issues and potential solutions. It delves into the concept and characteristics of metaverse platforms, describing them as environments that immerse users in a variety of virtual experiences. A significant portion of the paper is dedicated to exploring music use and copyright infringement in the metaverse. It examines how users incorporate existing music into their content, often leading to legal challenges due to copyright infringement. The paper discusses the role of online service providers (OSPs) in this context and the legal implications of their actions. The paper also addresses the 'safe harbor' provisions for OSPs and examines the balance between protecting rights holders and limiting OSP liability. It highlights the challenges and limitations of copyright enforcement in the metaverse, especially given the unique nature of content on platforms such as Roblox. Finally, the article proposes solutions to simplify music licensing in the metaverse, suggesting a shift from property rules to liability rules and the establishment of Collective Management Organizations (CMOs) to streamline the licensing process and better protect copyright holders' interests.

• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.2916-2922
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• 2024

\\In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells such as a Quatro SRAM, we-Quatro SRAM, and DICE SRAM cells have been reported for years. However, these designs have the disadvantage of taking up more area than a conventional 6T SRAM cell. Thus, we propose a radiation-hardened SRAM cell design that we named capacitor-static random access memory (C-SRAM) without area overhead. The C-SRAM is formed by simply adding a capacitor to the conventional 6T SRAM. It was designed to mitigate the radiation effect using the conservation law of electrical charge. Moreover, it has the same cell size as the conventional 6T SRAM cell. Its static noise margins (SNMs), which are indicators of operational stability, are equal to the conventional 6T SRAM values of 530 mV, 220 mV, and 860 mV in hold, read, and write modes, respectively. The results of the SEU simulation test showed that it had 4.761 times better flipping tolerance than the conventional 6T SRAM with a charge value of 247.494 fC. In addition, irradiation experiments also confirmed that the C-SRAM cell was more tolerant than the 6T SRAM cell. The conventional 6T SRAM and C-SRAM were fabricated using a standard 0.18 ㎛ CMOS process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.8
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• pp.1-9
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• 1999

Timing-level circuit analyses are used to obtain fast and accurate results, and the analysis of gate and interconnect delay is necessary to validate the correctness of circuit design. This paper proposes an efficient algorithm which simultaneously calculates the gate delay and the transition time of linearized voltage source for subsequent interconnect delay calculation. The notion of effective capacitance is used to calculate the gate delay and the transition time of linearized voltage source which considers the on-resistance of driving gate. The procedure for obtaining the gate delay and the transition time of linearized voltage source has been developed through an iterative operation using the precharacterized data of gates. While previous methods require extra information for the transition time calculation of linearized voltage sources, our method uses the derived data during the gate delay calculation process, which does not require any change in the precharacterization process.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.777-780
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• 2005

모바일 오디오 적용을 위한 저전력 ${\Sigma}{\Delta}$ Modulator 에 대한 설계와 layout 을 보였다. 전체 구조는 3 차 단일 피드백 루프이며, 해상도는 16bit 을 갖는다. 샘플링 주파수에 따른 Over-sampling Ratio 는 128(46kHz) 또는 64(96kHz) 가 되도록 하였다. 차동 구조를 사용한 3 차 ${\Sigma}{\Delta}$ modulator 내의 적분기에 사용된 Op-Amp 는 DC-Gain 을 높이기 위해서 Gain-boosting 기법이 적용되었다. ${\Sigma}{\Delta}$ modulator 의 기준 전압은 전류 모드 Band-Gap Reference 회로에서 공급이 되며, PVT(Process, Voltage, Temperature) 변화에 따른 기준 전압의 편차를 보정하기 위하여, binary 3bit 으로 선택하도록 하였다. DAC 에서 사용되는 단위 커패시터의 mismatch 에 의한 성능 감소를 막기 위해, DAC 신호의 경로를 임의적으로 바꿔주는 scrambler 회로를 이용하였다. 4bit Quantizer 내부의 비교기 회로는 고해상도를 갖도록 설계하였고, 16bit thermometer code 에서 4bit binary code 변환시 발생하는 에러를 줄이기 위해 thermometer-to-gray, gray-to-binary 인코딩 방법을 적용하였다. 0.18um CMOS standard logic 공정 내 thick oxide transistor(3.3V supply) 공정을 이용하였다. 입력 전압 범위는 2.2Vp-p,diff. 이며, Typical process, 3.3V supply, 50' C 시뮬레이션 조건에서 2Vpp,diff. 20kHz sine wave 를 입력으로 할 때 SNR 110dB, THD 는 -95dB 이상의 성능을 보였고, 전류 소모는 6.67mA 이다. 또한 전체 layout 크기는 가로 1100um, 세로 840um 이다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.369-372
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• 2002

In this research, a vision system for detecting tool breakage which is hardly detected by such indirect in-process measurement method as acoustic emission, cutting torque and motor current was developed and embedded into a PC-NC system. The vision system consists of CMOS image sensors, a slit beam laser generator and an image grabber board. Slit beam laser was emitted on the tool surface to separate the tool geometry well from the various obstacles surrounding the tool. An image of tool is captured through two steps of signal processing, that is, median filtering and thresholding and then the tool is estimated normal or broken by use of change of the centroid of the captured image. An air curtain made by the jetting high-pressure air in front of the lens was devised to prevent the vision system from being contaminated by scattered coolant, cutting chips in cutting process. To embed the vision system to a Siemens PC-NC controller 840D NC, an HMI(Human Machine Interface) program was developed under the Windows 95 operating system of MMC103. The developed HMI is placed in a sub window of the main window of 840D and this program can be activated or deactivated either by a soft key on the operating panel or M codes in the NC part program. As the tool breakage is detected, the HMI program emit a command for automatic tool change or send alarm to the NC kernel. Evaluation test in a high speed tapping center showed the developed system was successful in detection of the small-radius tool breakage.