• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.6
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• pp.700-709
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• 1988

A new technique is proposed for switch-level logic simulation for NMOS and CMOS logic circuits. For the simple inverter the rise or fall delay time is approximated by a product of polynomials of the input waveform slope, the output loading capacitance and the device configuration ratio, the polynomial coefficients being so determined as to best fit the SPICE simuladtion results for a given fabrication process. This approach can easily and accurately be extened to the case of multiple input transitions. The simulation results show that proposed method can predict the delay times within 5% error and with a speed up by a factor of three orders of magnitude for several circuits tested, as compared with the SPICE simulation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.152-161
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• 1996

This paper descrisbes the implementation of a 20D DCT that can be used for video conference, JPEG, and MPEG-related applications. The implemented DCT consists of two 1-D DCTs and a transposed memory between them, and uses ROM-based multipliers instead of conventional ones. As the system bit length, the minimum bit length that satisfies the accuracy specified by the ITU standard H.261 was chosen through the simulations using the C language. The proposed design uses a dual port RAM for the transposed memory, and processes two bits of input-pixel data simultaneously t ospeed up addition process using two sets of ROMs. The basic system architecture was designed using th Synopsys schematic editor, and internal modules were described in VHDL and synthesized to logic level after simulation. Then, the compass silicon compiler was used to create the final lyout with 0.8um CMOS libraries, using the standard cell approach. The final layout contains about 110, 000 transistors and has a die area of 4.68mm * 4.96mm, and the system has the processing speed of about 50M pixels/sec.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.215-220
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• 2007

Leakage current of CMOS circuits has become a major factor in VLSI design these days. Although many circuit-level techniques have been developed, most of them require significant amount of designers' effort and are not aligned well with traditional VLSI design process. In this paper, we focus on technology mapping, which is one of the steps of logic synthesis when gates are selected from a particular library to implement a circuit. We take a radical approach to push the limit of technology mapping in its capability of suppressing leakage current: we use a probabilistic leakage (together with delay) as a cost function that drives the mapping; we consider pin reordering as one of options in the mapping; we increase the library size by employing gates with larger gate length; we employ a new flipflop that is specifically designed for low-leakage through selective increase of gate length. When all techniques are applied to several benchmark circuits, leakage saving of 46% on average is achieved with 45-nm predictive model, compared to the conventional technology mapping.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.629-633
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• 2015

An active balun using current steering for phase correction is presented. The proposed active balun is constructed with two different unit balun structures based on current steering to reduce phase and amplitude errors. This type of topology can be compared with the conventional phase and amplitude correction techniques which do not incorporate the current steering. Designed and fabricated active balun in $0.18{\mu}m$ CMOS process operates over 0.95 - 1.45 GHz band, showing input reflection coefficient under -15 dB, phase error of $11^{\circ}$ and gain error of 0.5 dB. Gain is measured to be 0.3 dB maximum and power consumption of 7.2 mW is measured.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.608-614
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• 2015

A multi-channel audio CODEC with inter-channel interference suppression is proposed, in which channel switching noise-referred sampling error is significantly reduced. It also supports a coarse/fine mode operation for fast frequency tracking with good harmonic performance. The proposed multi-channel audio CODEC was designed in a 65 nm CMOS process. Measured results indicated that SNR and SNDR of ADC were 93 dB and 84dB, respectively, with SNDR improved by 43 dB. Those of DAC were 96 dB and 87 dB, respectively, with SNDR improved by 45 dB when all the channels are running independently.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.91-95
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• 2003

In this work, we have designed Gilbert cell downconversion mixer using 0.25um Anam CMOS process, we also have analyzed Conversion gain and IIP3 using Taylor series in our own unique way. Especially, bulk terminal is used as LO( Local Oscillator) input for reduction of power consumption and supply voltage. Supply voltage used in this design is lower than 1.8V and core current is less than 500uA. The simulation experiments showed that the conversion gain, IIP3, and power consumption were -1dB, 4.46dBm, and 0.8mW, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1695-1699
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• 2012

This paper is proposed all digital wide-range clock and data recovery circuit. The Proposed clock data recovery circuit is possible input data rate which is suggested is wide-range that extends from 100Mb/s to 3Gb/s and used an phase error detector which can use a way of over-sampling a data by using a 1/2-rate multi-phase clock and phase rotator which is regular size per $2{\pi}$/16 and can make a phase rotation. So it could make the phase rotating in range of input data rate. Also all circuit is designed as a digital which has a specificity against a noise. This circuit is designed to 0.13um CMOS process and verified simulation to spectre tool.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.424-427
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• 2007

A fully differential transconductor using the series composite transistor is proposed. Simulation results show that THD is less than 1.2% for the differential input signal of up to $1.5V_{p-p}$ when the input signal frequency is 10MHz. i he proposed transconductor is used to design a third-order elliptic Gm-C lowpass filter with 138kHz cutoff frequency for ADSL Tx filter. The design procedure is based on signal flow graph(SFG) of a doubly-terminated LC ladder filter by means of fully differential transconductors and capacitors. The filter is fabricated and measured with a $0.35{\mu}m$ CMOS process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.889-895
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• 2008

In this paper a Fractional-N frequency synthesizer is designed for UHF RFID readers. It satisfies the ISO/IEC frequency band($860{\sim}960MHz$) and is also applicable to mobile RFID readers. A VCO is designed to operate at 1.8GHz band such that the LO pulling effect is minimized. The 900MHz differential I/Q LO signals are obtained by dividing the differential signal from an integrated 1.8GHz VCO. It is designed using a $0.18{\mu}m$ RF CMOS process. The measured results show that the designed circuit has a phase noise of -103dBc/Hz at 100KHz offset and consumes 9mA from a 1.8V supply. The channel switching time of $10{\mu}s$ over 5MHz transition have been achieved, and the chip size including PADs is $1.8{\times}0.99mm^2$.