• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.10
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• pp.1-7
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• 2020

In recent years, as LED display systems are actively spread, study on effective control methods for an LED driver for driving the systems has been in progress. The most representative among them is the uniform brightness control method for the LED driver channel. In this paper, we propose an LED driver IC for BLU with current compensation and system protection functions to minimize channel luminance deviation. It is designed for current accuracy within ±3% between channels and a channel current of 150 mA. In order to satisfy the design specifications, the channel amplifier offset was canceled out by a chopping operation using a channel-driving PWM signal. Also, a pre-charge function was implemented to minimize the fast operation speed and luminance deviation between channels. LED error (open, short), switch TR short detection, and operating temperature protection circuits were designed to protect the IC and BLU systems. The proposed IC was fabricated using a Magnachip 0.35-um CMOS process and verified using Cadence and Synopsys' Design Tool. The fabricated LED driver IC has current accuracy within ±1.5% between channels and 150-mA channel output characteristics. The error detection circuits were verified by a test board.

• Journal of IKEEE
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• v.14 no.2
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• pp.1-8
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• 2010

In this paper, Green Mode Power IC is designed to reduce the standby power. The proposed and designed IC works for the Switch Mode Power Supply(SMPS) and has the function of PWM. To reduce the unnecessary electric power, burst mode and skip mode section are introduced and controlled by external power MOSFET to diminish the standby power. The proposed IC is designed and simulated by KEC 30V-High Voltage 0.5um CMOS Process. The structure of proposed IC is composed of voltage regulator circuit, voltage reference circuit, UVLO(Under Voltage Lock out) circuit, Ibias circuit, green circuit, PWM circuit, OSC circuit, protection circuit, control circuit, and level & driver circuit. Measuring the current consumption of each block from the simulation results, 1.2942 mA of the summing consumption current from each block is calculated and ot proved that it is within the our design target of 1.3 mA. The current consumption of the proposed IC in this paper is less than a half of conventional ICs, and power consumption is reduced to the extent of 1W in standby mode. From the above results, we know that efficiency of proposed IC is superior to the previous IC.

• Electrical & Electronic Materials
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• v.15 no.10
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• pp.3-6
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.31-38
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• 2010

This paper presents the design of a graphic memory for QVGA-scale LCD Driver IC (LDI). The graphic memory is designed based on the pseudo-SHAM for the purpose of small area, and the memory cell structure is designed using a bit line partitioning method to improve sensing characteristics and drivabilties in the line-read operation. Also, a collision protection circuit using C-gate is designed to control collisions between read/write operations and self-refresh/line-read operations effectively. The graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and the operations of the graphic memory have been verified using Hspice. The results show that the bit-bitb line voltage difference, ${\Delta}V$ increases by 40%, the charge sharing time between bit and bitb voltages $T_{CHGSH}$ decreases by 30%, and the current during line-read decreases by 40%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.111-118
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• 2008

In this paper, novel latch-up prevention method that employs power-up sequential switches has been proposed to relieve latch-up problem in liquid crystal display (LCD) driver ICs. These sequential switches are inserted in the 2'nd and 3'rd boosting stages, and are used to short the emitter-base terminals of parasitic p-n-p-n circuit before relevant boosting stages are activated during power-up sequence. To verily the performance of the proposed method, test chips were designed and fabricated in a 0.13-um CMOS process technology. The measurement results indicated that, while the conventional LCD driver If entered latch-up mode at $50^{\circ}C$ accompanying a significant amount of excess current, the driver IC adopting the proposed method showed no latch-up phenomenon up to $100^{\circ}C$ and maintained normal current level of 0.9mA.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.42 no.3
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• pp.45-50
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• 2005

A UV camera is being used in various application regions such as industry, medical science, military, and environment monitoring. A ROIC(ReadOut IC) is developed and can read the responses from UV photodiode sensors which are made with III-V nitride semiconductors of GaN series haying high resolution and high efficiency. To design FPA(Focal Plane Array) UV $8{\times}8$ ROIC, the photodiode type sensor devices are modeled as the capacitor type ones. The ROIC reads out signals from the detector at)d outputs sequentially pixel signals after amplifying and noise filtering of them. The ROIC is fabricated using the $0.5{\mu}m$ 2Poly 3Metal N-well CMOS process. And then, it and photodiode array are hybrid bonded by gold stud bumping process using ACP(Anisotropic Conductive Paste). After the packaging, UV images appearing on PC verified the operations of the ROIC.

• Journal of IKEEE
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• v.17 no.3
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• pp.267-274
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• 2013

This paper presents a design of LLC resonant converter IC for LED backlight unit based on PFM/PWM dual-mode feedback. Dual output LLC resonant architecture with a single inductor is proposed, where the master output is controlled by the PFM and slave output is controlled by the PWM. To regulate the master output PFM is used as feedback to control the frequency of the power switch. On the other hand, PWM feedback is used to control the pulse width of the power switch and to regulate the slave output. This chip is fabricated in 0.35um 2P3M BC(Bipolar-CMOS-DMOS) Process and the die area is $2.3mm{\times}2.2mm$. Current consumptions is 26mA from 5V supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.695-697
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• 2013

In this paper, temperature sensing circuit using by MOS is proposed. It produces the voltage as output and is applicable for the internal IC temperature measurement. It is designed by two current mirrors using MOS to implement the IC in the CMOS fabrication and is applicable for the various applications. It operates in two mode, temperature mode and sleep mode. From the simulation results, output voltage is measured from 0V to 1.2V by sweeping $0^{\circ}C{\sim}125^{\circ}C$ in temperature mode and output current flows under 100pA in sleep mode.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.46-53
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• 1994

In the following paper, the high frequency oscillation proximity sensor system, one of the sensor systems used in FA, is designed using CMOS. According to the proximity of metal objects, two differing amplitudes of sinusoidal waves are set, and by using rectifiers, dc voltages, which determine the constant current source circuit's output current levels, can be abstracted from these waves. To remove any disturbances in the dc voltage levels, a schmitt trigger is used. Some advantages of this CMOS high frequency oscillation proximity sensor are miniturization, light weight and low power disspation.