• Korean Chemical Engineering Research
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• v.49 no.4
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• pp.485-490
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• 2011

Tetrafluoromethane($CF_4$) has been used as etching and chamber cleaning gases for semiconductor manufacturing processes. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetime which causes the global warming effect. We have developed a waterjet gliding arc plasma system in which plasma is combined with waterjet and investigated optimum operating conditions for efficient $CF_4$ destruction through enlarging discharge region and producing large amount of OH radicals. The operating conditions are waterjet flow rate, initial $CF_4$ concentration, total gas flow rate, specific energy input. Through the parametric studies, the highest $CF_4$ destruction of 97% was achieved at 2.2% $CF_4$, 7.2 kJ/L SEI, 9 L/min total gas flow rate and 25.5 mL/min waterjet flow rate.

• Journal of the Korean Society of Combustion
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• v.22 no.4
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• pp.51-56
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• 2017

The decomposition of tetrafluoromethane has been investigated with the reaction mechanism proposed for freely propagating $CH_4/CF_4/O_2/N_2$ premixed flames on the oxygen enrichment. The factors affecting on the removal efficiency of tetrafluoromethane were analyzed. The increase in flame temperature due to oxygen enrichment has a great influence on the removal efficiency of tetrafluoromethane. At the same oxygen enrichment condition, the removal efficiency in the rich flame is higher than one in the lean flame. The increase of the F/H ratio leads to decrease the flame temperature and the removal efficiency of tetrafluoromethan is decreased at the flame temperature of 2600 K or lower, The elementary reactions that dominate the consumption of tetrafluoromethane are (R1) $CF_4+M=CF_3+F+M$ and (R2) $CF_4+H=CF_3+HF$. (R1) has the greatest effect on the consumption of tetrafluoromethane under the oxygen enhanced flames.

• Membrane Journal
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• v.22 no.3
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• pp.201-207
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• 2012

In this study, we investigated permeation of single gas ($N_2$, $O_2$, $CF_4$, and $SF_6$) through flat sheet membrane composed of PDMS (poly-dimethylsiloxane) and PEBAX (polyether block amides). Gas permeation experiment was performed with various feed pressure. Permeability was estimated using permeation flux measured by continuous-flow technique. The permeability of gases except $SF_6$ in PDMS were decreased with the upstream pressure increased. $SF_6$ is much more permeable than $CF_4$, which is due to higher critical temperature of $SF_6$. The permeability decreased in the following order: $O_2$ > $N_2$ > $SF_6$ > $CF_4$. On the other hand, the permeability of gases in PEBAX followed the order: $O_2$ > $N_2$ > $CF_4$ > $SF_6$ which are opposite of the order of kinematic diameter (${\AA}$)($SF_6$ > $CF_4$ > $N_2$ > $O_2$). The $SF_6/CF_4$ pure gas selectivity in PDMS was 2.1 at 0.7 MPa.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.2
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• pp.245-251
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• 2008

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field was performed. The experiments were carried out under AC voltage and standard lightning impulse(SLI) voltage. Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltages and standard lighting impulse voltage was applied in a needle-plane. The needle-plane electrode whose gap distance was 3 mm were used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field may be influenced by defects like needle-shaped protrusions. In case of slowly rising SLI voltage and AC voltage it is enhanced by corona-stabilization. This phenomena caused by the ion drift during streamer development and the resulting space-charge is investigated. In non-uniform field under negative SLI voltage the breakdown voltage was increase linearly but under positive SLI voltage the breakdown voltage increase non-linearly. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at AC voltage. $SF_6/CF_4$ mixture has good dielectric strength and arc-extinguishing properties than pure SF6. This paper presents experimental results on breakdown characteristics for various mixtures of $SF_6/CF_4$ at practical pressures. We could make an environment friendly gas insulation material with maintaining dielectric strength by combing $SF_6\;and\;CF_4$ which generates a lower lever of the global warming effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.62-65
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1820-1822
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• 2002

본 논문에서는 반도체 제조공정에서 발생하는 $CF_4$의 분해와 제거를 위하여 3상 교류 플라즈마 토치를 제작하고, 플라즈마를 발생시켜 $CF_4$제거 가능성과 이에 따른 문제점에 대해 알아보았다. 매우 강하고 안정한 C-F 결합을 깨고 $CF_4$가스를 분해하기 위해서는 1100[$^{\circ}C$]정도의 고온이 필요한데, 본 실험의 플라즈마 플레임의 경우 $CF_4$가스를 열분해 광분해 시키기에는 충분한 온도와 에너지를 가지고 있다고 사료된다. 하지만 고온의 플라즈마와 토치 내부의 복잡한 유동과 고온의 플라즈마에 의한 전극의 융삭문제는 플라즈마를 연속적으로 발생시켜 $CF_4$가스의 제거효율을 높이기 위해서는 필히 개선해야 할 문제점인 것으로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.133-137
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• 2002

In this paper, the $CF_{4}$ decomposition rate are investigated for a simulated three plasma reactors which are metal particle reactor, spiral wire reactor and reactor with porous dielectric as applied voltage. The $CF_{4}$ decomposition rate by plasma reactor with porous dielectric had a gain of 20~25[%] over that by plasma reactor with spiral wire or metal particle electrode. The $CF_{4}$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_{4}$ decomposition efficiency of metal particle reactor was about 80[%] at AC 24[kV]. However, decomposition efficiency is more than 90% in case of the reactor with porous dielectric. we think, the reactor with porous dielectric should be much better than other reactors for $CF_{4}$ decomposition.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.30-35
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• 2003

In this paper, the $CF_4$ decomposition efficiency is investigated for three simulated plasma reactors that are needle plate reactor, metal particle reactor, and dielectric barrier reactor with hole (DBH). The$CF_4$ decomposition efficiency by DBH is much better than that by needle plate reactor or metal particle reactor. When applied voltage is increased up to the critical voltage for spark formation in the all reactors, the $CF_4$ decomposition efficiency is increased. The $CF_4$ decomposition efficiency in needle plate reactor and metal particle reactor is about $12\%$ and $22\%$ respectively at applied voltage of 23 kV (consumption power: 110 W) and $CF_4$ concentration of 500 ppm, however, the $CF_4$ decomposition efficiency is more than $95\%$ in case of DBH. DBH should be much better than two reactors investigated for $CF_4$ decomposition.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.4
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• pp.635-640
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• 2008

New gas mixtures are now finding applications such as interrupting media for high-voltage circuit breakers. These mixtures consist of a high content of carbon tetrafluoride($CF_4$) added to sulfur hexafluoride($SF_6$). Nowdays $SF_6$ has been established for the use in gas insulated substations due to its high insulation withstand level and good arc quenching capability. At this paper Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltage and standard lightning impulse voltage(LI) was applied in a needle-plane electrodes. And partial discharge(PD) experiments were carried out in the test chamber which was made in needle-plane electrode. And ${\Phi}$-Q-N distribution of partial discharge signals was analyzed. The total pressure of the $SF_6/CF_4$ mixtures was varied within the range of 0.1-0.5 Mpa in the test chamber. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at positive impulse voltage and the PD inception voltage was increased slightly when pressure of $SF_6/CF_4$ Mixtures was increased. Maximum PD inception voltage is showed in 80% SF6/20%$CF_4$.