• 전기학회논문지P
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• 제52권1호
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• pp.9-13
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• 2003

Energy Distribution Function in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, $f(\varepsilon)$ has the symmetrical shape whose axis of symmetry is a most probably energy. The measured results and the calculated results have been compared each other.

• 전기학회논문지P
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• 제60권3호
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• pp.105-109
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• 2011

Drift Velocity of Electrons in pure $CF_4$, $CH_4$ and mixtures of $CF_4$ and Ar. Have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The measured results and the calculated results have been compared each other.

• 대한약침학회지
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• 제4권2호
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• pp.65-71
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• 2001

Objectives : This study was performed to examine the patterns and to prevent the side effects of CF Herbal Acupuncture treatment Methods : We observed 10 patients who complained the side effects of Herbal acupuncture CF and 2 healthy men for the sake of examine the cause from the August 17 to 24, 2001. Results 1. All of the patients complained severe pain, redish, and edema on the side of injections 2. We were able to witness decrease in pain, redish, and edema, after 2days of injection. After 4days, we were unable to any side effects. 3. According to the clinical studies, we came to determine that the CF herbal abstract which caused the side effects were manufactured between 4 to 13 days, August 4. We assume these side effects were caused by minute quantity of toxin remaining in the screw pressor mixed with the CF herbal abstract.

• 전기학회논문지P
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• 제61권1호
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• pp.13-17
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• 2012

Ionization and Attachment Coefficients in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CH_4$, $CF_4$ and Ar, were used. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures.

• 공업화학
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• 제22권1호
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• pp.31-36
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• 2011

사불화탄소($CF_4$)는 반도체 제조공정에서 플라즈마 에칭과 화학기상증착(CVD)에서 사용되어온 가스이다. $CF_4$는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 본 연구에서는 플라즈마와 워터젯을 결합하여 방전영역을 증가시키고 다량의 OH 라디칼을 생성시켜 $CF_4$를 고효율로 분해할 수 있는 워터젯 글라이딩 아크 플라즈마 시스템을 개발하였다. 실험 변수로 전극 형태, 전극 각도, 가스 노즐직경, 전극 간격과 전극 길이를 취하였다. 변수실험을 통하여 Arc 형태의 전극에서 전극 각도가 $20^{\circ}$, 가스 노즐 직경이 3 mm, 전극 간격이 3 mm, 전극 길이가 120 mm일 때 $CF_4$ 분해율은 최고 93.4%까지 도달하였다.

• 대한기계학회논문집B
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• 제35권8호
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• pp.839-845
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• 2011

산소부화 조건의 $CH_4/O_2/N_2$ 화염에서 트리플루오르메탄의 영향을 조사하기 위해 1기압에서 자유롭게 전파하는 예혼합 화염에 대한 수치해석을 수행하였다. 트리플루오르메탄은 화염속도 감소에 기여하며, 감소의 크기는 화학적 효과보다 물리적 효과에 의해 더 크다. 트리플루오르메탄은 산소부화된 $CH_4/O_2/N_2$ 화염에서 더 많이 첨가되고 소비될 수 있다. 트리플루오르메탄은 주로 $CF_3{\rightarrow}CF_2{\rightarrow}CF{\rightarrow}CF:O{\rightarrow}CO$을 통해 분해되고, 산소부화 화염에서 $CHF_3+M{\rightarrow}CF_2+HF+M$이 중요한 역할을 한다. 억제제가 산소 부화 화염에 첨가함에 따라 활성기 최대 농도의 위치는 상대적으로 낮은 온도로 이동하고, OH의 순생성률은 H의 순생성률보다 높다.

• 한국염색가공학회지
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• 제11권1호
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• pp.25-33
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• 1999

PET fabric was grafted with $CF_4$ or $C_2F_6$ plasmas generated by glow discharge. The water repellency of plasma-treated fabrics were evaluated with contact angle meter. The change in surface morphologies was observed by SEM, and the change of surface chemical characteristics were analyzed by FT-IR, ESCA and microchemical analysis technique. The results obtained are as follows : 1) The contact angle of plasma-treated fabric was over $150^\circ{C}$. 2) It was observed by SEM that the surface of treated substrate was over coated with thin film formed by the fluorocarbon plasma treatment. 3) According to ESCA analysis, there were prevailing -CHF-, $-CF_2$- and a little $-CF_3$ components on fluorocarbon plasma treated substrate. -CHF- and $-CF_2$- components were reduced by washing, and $-CF_2$- component was recovered by heat treatment. 4) In consideration of quantitative analysis of fluorine and F/C ratio by ESCA, we found that fluorination reached to the inner of substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.227-228
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• 2007

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of SFJCF4 mixtures in uniform field was performed. The experiments were carried out under AC and standard lightning impulse (SLI) voltages. The sphere-sphere electrode whose gap distance was 1 mm was used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.4 MPa. The results show that addition of $SF_6$ to $CF_4$ increase AC and SLI breakdown voltages. Under AC voltages the breakdown voltages of each mixture were linearly increased according to the quantity of $SF_6$. However under SLI voltages the breakdown voltages of each mixture were similar.

• 한국결정성장학회지
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• 제9권1호
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• pp.60-63
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• 1999

Ta-Al 합금 박막의 건식식각에 대하여 조사하였다. $CF_{4}$ 기체를 이용한 반응성 이온 식각(Reactive Ion Etching, RIE)이 1:1 조성의 Ta-Al 합금 박막의 식각에 적용될 수 있음을 확인하였으며, 식각속도는 $67{\AA}/min$으로 측정되었다. 그리고 $CF_{4}$ 기체는 Ta-Al 합금 박막과 $SiO_{2}$ 층간에 선택성이 없다는 것이 확인되었으며, $SiO_{2}$ 층의 식각속도는 Ta-Al 박막의 경우보다 약 12배 빠른 $800{\AA}/min$으로 측정되었다. 그 외에 $CF_{4}$ 기체를 이용한 반응성 이온 식각에서는 Shiepley 1400-27 Photo Resist 보다 AZ 5214 Photo Resist가 더 안정적이라는 것이 조사되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.