• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.9-13
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• 2003

Energy Distribution Function in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, $f(\varepsilon)$ has the symmetrical shape whose axis of symmetry is a most probably energy. The measured results and the calculated results have been compared each other.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.3
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• pp.105-109
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• 2011

Drift Velocity of Electrons in pure $CF_4$, $CH_4$ and mixtures of $CF_4$ and Ar. Have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The measured results and the calculated results have been compared each other.

• Journal of Pharmacopuncture
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• v.4 no.2
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• pp.65-71
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• 2001

Objectives : This study was performed to examine the patterns and to prevent the side effects of CF Herbal Acupuncture treatment Methods : We observed 10 patients who complained the side effects of Herbal acupuncture CF and 2 healthy men for the sake of examine the cause from the August 17 to 24, 2001. Results 1. All of the patients complained severe pain, redish, and edema on the side of injections 2. We were able to witness decrease in pain, redish, and edema, after 2days of injection. After 4days, we were unable to any side effects. 3. According to the clinical studies, we came to determine that the CF herbal abstract which caused the side effects were manufactured between 4 to 13 days, August 4. We assume these side effects were caused by minute quantity of toxin remaining in the screw pressor mixed with the CF herbal abstract.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.1
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• pp.13-17
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• 2012

Ionization and Attachment Coefficients in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CH_4$, $CF_4$ and Ar, were used. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.31-36
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• 2011

Tetrafluoromethane ($CF_4$) has been used as the plasma etching and chemical vapor deposition (CVD) gas for semiconductor manufacturing processes. However, the gas need to be removed efficiently because of their strong absorption of infrared radiation and the long atmospheric lifetime which cause global warming effects. A waterjet gliding arc plasma system in which plasma is combined with the waterjet was developed to effectively produce OH radicals, resulting in efficient destruction of $CF_4$ gas. Design factors such as electrode shape, electrode angle, gas nozzle diameter, electrode gap, and electrode length were investigated. The highest $CF_4$ destruction of 93.4% was achieved at Arc 1 electrode shape, $20^{\circ}$ electrode angle, 3 mm gas nozzle diameter, 3 mm electrode gap and 120 mm electrode length.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.8
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• pp.839-845
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• 2011

We performed numerical simulations of freely propagating premixed flames at atmospheric pressure to investigate the influence of trifluoromethane on $CH_4/O_2/N_2$ flames under oxygen enrichment. Trifluoromethane significantly contributed toward a reduction in flame speed, the magnitude of which was larger in terms of the physical effect than the chemical effect. More trifluoromethane could be added and consumed on oxygen-enriched $CH_4/O_2/N_2$ flames. $CHF_3$ was decomposed primarily via $CF_3{\rightarrow}CF_2{\rightarrow}CF{\rightarrow}CF:O{\rightarrow}CO$ and $CHF_3+M{\rightarrow}CF_2+HF+M$ played an important role in oxygen-enhanced flames. When an inhibitor was added to oxygen-enriched flames, the position of the maximum concentration of active radicals was shifted to a relatively low temperature range, and the net rate of OH became higher than that of H.

• Textile Coloration and Finishing
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• v.11 no.1
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• pp.25-33
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• 1999

PET fabric was grafted with $CF_4$ or $C_2F_6$ plasmas generated by glow discharge. The water repellency of plasma-treated fabrics were evaluated with contact angle meter. The change in surface morphologies was observed by SEM, and the change of surface chemical characteristics were analyzed by FT-IR, ESCA and microchemical analysis technique. The results obtained are as follows : 1) The contact angle of plasma-treated fabric was over $150^\circ{C}$. 2) It was observed by SEM that the surface of treated substrate was over coated with thin film formed by the fluorocarbon plasma treatment. 3) According to ESCA analysis, there were prevailing -CHF-, $-CF_2$- and a little $-CF_3$ components on fluorocarbon plasma treated substrate. -CHF- and $-CF_2$- components were reduced by washing, and $-CF_2$- component was recovered by heat treatment. 4) In consideration of quantitative analysis of fluorine and F/C ratio by ESCA, we found that fluorination reached to the inner of substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.227-228
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• 2007

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of SFJCF4 mixtures in uniform field was performed. The experiments were carried out under AC and standard lightning impulse (SLI) voltages. The sphere-sphere electrode whose gap distance was 1 mm was used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.4 MPa. The results show that addition of $SF_6$ to $CF_4$ increase AC and SLI breakdown voltages. Under AC voltages the breakdown voltages of each mixture were linearly increased according to the quantity of $SF_6$. However under SLI voltages the breakdown voltages of each mixture were similar.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.60-63
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• 1999

Application of reactive ion etching (RIE) technique to Ta-Al alloy thin film with a thickness of $1000{\AA}$ was studied. $CF_{4}$ gas could be used effectively to etch the Ta-Al alloy thin film. The etching rate in the thin film with Ta content of 50 mol% was about $67{\AA}/min$. NO selectivity between the Ta-Al alloy film and $SiO_{2}$ film was observed during the etching using the $CF_{4}$ gas. The etching rate of the $SiO_{2}$ layer was 12 times faster than that of the Ta-Al alloy thin film. It was also observed that photoresist of AZ5214 was more useful than Shiepley 1400-27 in RIE with the $CF_{4}$ gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.