• Journal of the Korean Vacuum Society
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• v.4 no.4
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• pp.417-424
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• 1995

전자 회전 공명 플라즈마 발생 장치에서 CF4를 방전시켰을 때 각종 플루오로카본 래디칼의 절대적, 상대적 밀도 변화를 수소 철가율, 동작 압력 그리고 축방향에 따라 appearace mass spectrometry(AMS)를 통해 조사하였으며, 플루오린 원자의 상대적 밀도 변화가 actinometry법에 의해 조사되었다. 수소첨가에 따른 CF2 래디칼의 거동을 actinometry와 AMS로 살펴보았을 때 서로 일치하는 경향을 얻었으며 마이크로웨이브전력 500W, 압력 7.5mTorr에서 CF3와 CF2 래디칼의 밀도가 CF에 비해 높았으며 각각 2X1013/㎤, 1X1013/㎤의 값을 가졌다. 수소를 첨가함에 따라 플루오린 원자와 CF3의 밀도는 감소하는 반면 CF2와 CF의 밀도는 현저히 증가하여 수소가 40% 첨가된 경우 CF2의 밀도가 CF3보다 커짐을 확인하였다. 또한, CF2가 증가하면서 C2F4의 존재가 확인되었으며, 수소가 30% 첨가된 경우 축방향을 따라 C2F4래디캄만이 증가하였고 플루오린 원자는 감소하는 반면 다른 CFx(x=1~3)래디칼은 거의 변화가 없었다. 이러한 실험 결과를 토대로 CF4+H2 플라즈마를 이용한 산화막 식각 특성이 설명되었다.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.374-380
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• 1998

Radical and ion densities in a $CF_4$plasma have been calculated as a function of input power density, gas pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and $CF^+$ become dominant neutral and ionic radical at the high power condition. As the pressure increase, ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of $CF_4$feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of $CF_4$monotonically decreases with flow rate, which results in increase in $CF_3$and decrease in CF density. The calculation results show that the $SiO_2$etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.393-397
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• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• Horticultural Science & Technology
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• v.31 no.6
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• pp.740-747
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• 2013

Leaf mold symptoms were found on commercial tomato cultivars carrying the Cf-9, a resistance gene to leaf mold pathogen Fulvia fulva in 2012 at Buyeo, Chungnam in Korea. Fifteen-fungal isolates were obtained from four Cf-9 cultivars of tomato including 'Cutie', 'otaerangdia', 'Unicorn' and 'Rapito'. Due to their same morphological appearances and colony color, nine isolates were selected and identified as F. fulva based on molecular analysis of the internal transcribed spacer rDNA sequence. Pathogenicity of the 15 isolates on five commercial cultivars carrying Cf-4, Cf-5, and Cf-9 were tested. All the isolates showed strong pathogenicity on Cf-9 cultivars, 'Cutie' and 'Dotaerangdia', and Cf-5 cultivar, 'Yoyocaptain'. In contrast, on Cf-4 cultivar, 'Superdotaerang', five isolates were virulent and the other isolates were not. In addition, two fungal isolates, infecting Cf-9 cultivar and non-infecting Cf-4 cultivar, were selected and their pathogenicity was tested on 17 commercial cultivars reported as tomato having Cf-9 resistance gene. Among them, 15 cultivars were susceptible and 2 cultivars were resistant. It is likely that the two cultivars include other resistance gene. To our knowledge, this is the first report on the occurrence of Cf-9 infecting F. fulfva strains in Korea.

• Journal of Environmental Science International
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• v.22 no.9
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• pp.1097-1103
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• 2013

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.210-210
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• 1999

그리드 전압을 +20V에서 -20V까지 변화시켜 줌을 이용해 확산 영역의 전자의 온도를 2-0.6eV까지 제어할 수 있었으며, 전자 밀도는 1010cm-3 - 1011cm-3, 플라즈마 전위는 3-25V까지 제어할 수 있었다. <그림1>은 실험결과이다. 그 외 전자의 온도는 입력 전력의 주파수 및 크기에는 거의 무관하나 압력에 반비례하였으며, 밀도는 전력의 크기에 비례하고, 압력에 반비례하나, 전력의 주파수에는 무관하였다. 그리드 전압이 20V에서 -20V로 변함에 따라 전자의 온도가 떨어져 높은 에너지를 가진 전자들이 줄어들게 되어 CF3+의 양은 많아지고 CF2+와 CF+의 양은 상대적으로 줄어들어 CF3+와 CF2+ 비는 4-18 CF3+와 CF+ 비는 2-5까지 변화하였으며, 변화모양은 전자 온도에 크게 의존하였다. <그림2>는 결과를 나타낸 것이다. 그 외 CF3+ / CF2+ 와 CF3+ / CF+는 입력 전력의 크기에 반비례하며, 압력, 가스 주입량에 따라서도 이온들의 분포 변하였다. 그러나 입력 전력의 주파수와는 무관하였다. Appearance mass spectrometry를 이용한 결과 CF, CF 중성종의 분포도 그리드 전압에 따라 변하여 그리드 전압이 높은 경우 더 많이 존재하였다.

• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.242-246
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• 1999

For the fluorination of $CF_2Cl_2$, the yield of $CF_4$ was found to be increased with the contact time and the reaction temperature. When the mole ratio of HF/$CF_2Cl_2$ is 3 or above, the yield of $CF_4$ was attained to 100% at $370^{\circ}C$ and contact time of 3 seconds. In the case of the fluorination of $CCl_4$ with HF, the yield of $CF_4$ was obtained above 90% at the reaction temperature of $500^{\circ}C$, the contact time of 3 seconds, and the mole ratio of HF/$CCl_4$ of 5.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.373-375
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• 2006

$CF_4$ gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of $CF_4$ gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other $CF_x$ radicals, such as $CF_2$ and $CF_3$, were not seen in this experiment whereas strong C and $C_2$ emissions, dissociation products of $CF_4$ gas, were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.238-239
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• 2011

최근 반도체 산업은 더 높은 성능의 회로 제작을 통해 초고집적화를 추구하고 있다. 이를 위해서 회로 설계의 최소 선폭과 소자 크기는 지속적으로 감소하고 있고 이를 위한 배선 기술들은 플라즈마 공정을 이용한 식각공정에 크게 의존하고 있다. 식각공정에 있어서 반응가스의 조성은 식각 속도와 선택도를 결정하는 중요한 요소이다. 본 연구에서는 CIS QMS (closed ion source quadrupole mass spectrometer)를 이용하여 CF4+Ar를 이용한 실리콘 산화막의 플라즈마 식각 공정 시 생성되는 라디칼과 이온 종들을 측정하였다. Ar 이온이 기판표면과 충돌하여 기판물질간의 결합을 깨놓으면, 반응성 기체 및 라디칼과의 반응성이 커져서 식각 속도를 향상 시키게 된다. 본 실험에서는 2 MHz의 RPS (remote plasma source)를 이용하여 플라즈마를 발생시키고 13.56 MHz의 rf 전력을 기판에 인가하여 식각할 웨이퍼에 바이어스 전압을 유도하였다. CF4/(CF4+Ar)의 가스 혼합비가 커질수록 식각 부산물인 SiF3의 양은 증가 하였으며, CF4 혼합비가 0일 때(Ar 100%) 비하여 1일 때(CF4 100%) SiF3의 QMS 이온 전류는 106배 증가하였다. 이때의 Si와 결합하여 SiF3를 형성하는 F라디칼의 소모는 0.5배로 감소하였다. 또한 RPS power가 800 W일 때 플라즈마에 의해서 CF4는 CF3, CF2, CF로 해리 되며 SiO2 식각 시 라디칼의 직접적인 식각과 Si_F2의 흡착에 관여되는 F라디칼의 양은 CF3 대비 7%로 검출되었고, 식각 부산물인 SiF3는 13%로 측정되었다. Ar의 혼합비를 0 %에서 100%까지 증가시켜 가면서 측정한 결과 F/CF3는 $1.0{\times}105$에서 $2.8{\times}102$로 변화하였다. SiF3/CF3는 1.8에서 6.3으로 증가하여 Ar을 25% 이상 혼합하는 것은 이온 충돌 효과에 의한 식각 속도의 증진 기대와는 반대로 작용하는 것으로 판단된다.