• 한국초전도ㆍ저온공학회논문지
• /
• 제6권4호
• /
• pp.1-4
• /
• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• 한국전기전자재료학회논문지
• /
• 제16권11호
• /
• pp.979-986
• /
• 2003

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.

• 한국세라믹학회지
• /
• 제36권1호
• /
• pp.69-76
• /
• 1999

BaCeO3 페롭스카이트 구조의 Ce4+ 자리에 3가의 양이온 (La3+, Yb3+, Al3+)을 10 mol% 첨가하여 열처리한 후 전기적 특성을 관찰하였다. 전기전도도 측정 결과 모든 조성에서 질소분위기에서 측정한 경우보다 대기 중에서 측정한 경우의 전기전도도가 높게 측정되었으며 이러한 경향은 온도가 높아질수록 두드러졌다. 전기전도도는 BaCe0.9Yb0.1O3-$\delta$조성에서 가장 높았고 BaCe0.9Al0.9O3-$\delta$ 조성에서 가장 낮았다. proton의 수송율(transference number)을 기전력 측정법을 통해 비교한 결과 Al을 첨가한 조성에서 모든 온도에 걸쳐 가장 높은 proton의 수송율을 얻을 수 있었다.

• 한국세라믹학회지
• /
• 제45권4호
• /
• pp.226-231
• /
• 2008

The dense sintered bodies with >95% theoretical densities were successfully obtained from the $BaZrO_3,\;BaCeO_3,\;Ba(Zr_{0.7}Ce_{0.3})O_3$ solid solution, and core-shell structured $0.7BaZrO_3-0.3BaCeO_3$ composite powders prepared by sol-gel methods. The activation energy of $Ba(Zr_{0.7}Ce_{0.3})O_3$ solid solution calculated from the Arrhenius plot of the proton conductivities was similar to that of $BaZrO_3$. The activation energy of core-shell structured $0.7BaZrO_3-0.3BaCeO_3$ composite, however, was much lower than that of $BaZrO_3$ or $Ba(Zr_{0.7}Ce_{0.3})O_3$ solid solution, and was very similar to that $BaCeO_3$. These results could be assigned to the Ce-rich grain boundary which was clearly observed by EDX in core-shell structured $0.7BaZrO_3-0.3BaCeO_3$ composite.

• 한국결정성장학회지
• /
• 제26권1호
• /
• pp.14-18
• /
• 2016

$Ce^{3+}$ 이온을 도핑한 $(Ce_xLu_{1-x})_3MgAl_3SiO_{12}$ 형광체 샘플을 고상합성법으로 합성하였다. 열처리 온도를 1250부터 $1550^{\circ}C$ 온도영역에서 조절하면서 5 h 동안 소성하였으며, 소성된 샘플들의 XRD와 PL 특성을 조사하여 가장 최적의 열처리 온도를 구하고자 하였다. 또한 $Ce^{3+}$ 이온의 도핑농도를 2.0에서 10.0 mol%로 변화시키면서 $Ce^{3+}$ 이온의 도핑농도와 광학적 특성과의 관계를 고찰하였다. $Ce^{3+}$ 이온의 도핑농도에 따른 형광체들의 PL 강도, 피크위치, 반치폭을 계산하여 실제적인 LED 패키징에 가장 적절한 Ce 도핑 농도를 구하고자 하였다. 또한 최적의 소성온도와 Ce 도핑농도 조건에서 합성한 형광체 샘플의 입도와 입형을 분석하였다.

• 생물환경조절학회지
• /
• 제17권3호
• /
• pp.226-230
• /
• 2008

혼합 싹채소의 MAP에 적합한 포장재를 선발하기 위해 알팔파, 브로콜리, 양배추, 무, 그리고 적무의 혼합 싹채소를 $50{\mu}m$ 두께의 low-density polyethylene 필름(PE 50), $50{\mu}m$ 두께의 polypropylene 필름(PP 50), $50{\mu}m$ 두께의 ceramic 필름(CE 50), $25{\mu}m$ 두께 ceramic 필름(CE 25), $10\sim13{\mu}m$ 두께의 polyethylene film(wrap), 그리고 통기구가 있는 polyethylene terephthalate 박스(box)로 포장하여 $8^{\circ}C$에서 저장 비교하였다. 저장 중 혼합 싹채소의 생체중은 7%의 감소를 보인 box처리구를 제외한 모든 처리구에서 2% 미만의 감소만을 보였다. 포장재 내부 대기는 필름 종류에 따라 차이를 보였다. CE 25는 산소와 이산화탄소 모두 5% 수준이었으나, PE 50과 CE 50은 이보다 높은 이산화탄소와 낮은 산소 농도를 보였는데, 이러한 대기 조성 변화가 이들 처리구에서 가장 이취가 가장 심했던 원인이라 생각된다. 저장 10일째 포장재 내 에틸렌 농도는 box가 가장 낮았고, 다음으로 PP 50, wrap, CE 25의 순서로 높았으며 외관상 품질이 저하가 가장 심하였던 PE 50과 CE 50에서 가장 높았다. 이상의 결과를 종합할 때, 1% 미만의 생체중 감소와 5% 수준의 이산화탄소와 산소 농도, 그리고 4ppm 이하의 에틸렌 농도를 보인 CE 25가 혼합 싹채소에 가장 적합한 포장재인 것으로 나타났다.

• 한국가금학회지
• /
• 제24권3호
• /
• pp.139-143
• /
• 1997

This experiment was conducted to investigate the effect of dietary supplemental charcoal(CH) or charcoal extract(CE) on performance and meat quality of broiler chicks for 5 weeks. Basal diets based on corn and soybean meal contained 21% crude protein for the first 3 weeks and 19% for the rest two weeks. Two levels of dietary CH(O, 0.5%) and CE(0, 0.2%) were fed in a factorial design. There were four replicates of 10 chicks each per treatment. An increased growth rate was observed in chicks fed the basal diet supplemented with CE alone. Chicks fed the diet containing both CH and CE tended to depress the growth rate. Dietary supplemental CH and CE improved the feed conversion efficiency compared to the control group, but was not significantly different between them. The abdominal fat(%) of chicks fed CH alone or both CH and CE tended to de-crease without significant difference. The total lipid content of breast meat of chicks fed CE alone showed significant difference among treatments (P

• 한국진공학회지
• /
• 제8권3B호
• /
• pp.322-326
• /
• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.322-323
• /
• 2006

The nano-sized Ce-doped YAG(Yttrium Aluminum Garnet, $Y_3Al_5O_{12}$) phosphor powders were prepared by combustion method from a mixed aqueous solution of metal nitrates, using citric acid as a fuel. The luminescence formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The XRD patterns show that YAG phase can form at all of the $Ce^{3+}$ concentration. However, when $Ce^{3+}$ concentration is over 2.0mol%, XRD patterns show $CeO_2$ peak between (321) peak and (400) peak. The pure crystalline YAG:Ce with uniform size of 30nm was obtained at 0.6mol% of the $Ce^{3+}$ concentration. The crystalline YAG:Ce powders showed broad emission peaks in the range 475~630nm and had maximum intensity at 526nm.

• The Korean Journal of Ceramics
• /
• 제5권1호
• /
• pp.1-11
• /
• 1999

The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.