• Journal of the Korean Magnetic Resonance Society
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• v.19 no.2
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• pp.88-94
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• 2015

Bub1 is one of the spindle checkpoint proteins and plays a role in recruitment of the related proteins to kinetochore. Here, we studied the structural characteristic of the evolutionarily conserved 160 amino acid region in the N-terminus (hBub1 CD1), using Circular Dichroism (CD) and NMR. Our CD results showed that hBub1 CD1 is a highly helical protein and its structure was affected by pH: as pH was elevated to basic pH, the helical propensity increased. This could be related to the surface charge of the hBub1 CD1. However, the structural change did not largely depend on the salt concentration, though the thermal stability a little increased. The previous NMR analysis revealed that the hBub1 CD1 adopts eight helices, which is consistent with the CD result. Our result would be helpful for evaluating the molecular mechanism of the hBub1 CD1 and protein-protein interactions.

• Journal of the Korean Magnetic Resonance Society
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• v.7 no.1
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• pp.37-45
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• 2003

Human CD99 is a ubiquitous 32-kDa transmembrane protein encoded by mic2 gene. Recently it has been reported that expression of a splice variant of CD99 transmembrane protein (Type I and Type II) increases invasive ability of human breast cancer cells. To understand structural basis for cellular functions of CD99 Type II, we have initiated studies on hCD99$\^$TMcytoI/ using circular dichroism (CD) and multi-dimensional NMR spectroscopy. CD spectrum of hCD99$\^$TMytoI/ in the presence of 200mM DPC and CHAPS displayed an existence ${\alpha}$-helical conformation, showing that it could form an ${\alpha}$-helix under membrane environments. In addition, we have found that the cytoplasmic domain of CD99 would form symmetric dimmer in the presence of transmembrane domain. Although it has been rarely figured out the correlation between structure and functional mechanism of hCD99$\^$TMcytoI/, the dimerization or oligomerization would play an important role in its biological function.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.382-387
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• 2000

The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$single crystals were crystallized into a defect chalcopyrite structure. The optical energy gap of the $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals was found to be 3.377 eV and 2.924 eV, respectively, at 300 K. Blue emission with peaks in 456nm~466nm at 280K was observed in the $CdAl_2S_4$ single crystal. Optical absorption and emission peaks due to impurities in the $CdAl_2S_4 Co^{2+}$ single crystal were observed and described as originating from the electron transition between energy levels of the $Co^{2+} ion sited at the Td symmetry point.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• The KIPS Transactions:PartA
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• v.13A no.3 s.100
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• pp.231-240
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• 2006

In this paper, wireless internet proxy server clusters are used for the wireless internet because their caching, distillation, and clustering functions are helpful to overcome the limitations and needs of the wireless internet. TranSend was proposed as a clustering based wireless internet proxy server but it has disadvantages; 1) its scalability is difficult to achieve because there is no systematic way to do it and 2) its structure is complex because of the inefficient communication structure among modules. In our former research, we proposed the CD-A structure which can be scalable in a systematic way but it also has disadvantages; its communication structure among modules is partly complex. In this paper, we proposed a consolidated scheme which has a systematic scalability and an efficient communication structure among modules. We performed experiments using 16 PCs and experimental results show 196% and 40% performance improvement of the proposed system compared to the TranSend and the CD-A system, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.40-43
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• 1995

In this paper, structual, optical and electrical properties of CdZnS thin films prepared by electron beam evaporation method were studied. The crysta1 structure of CdZnS films deposited was hexagonal type with preferential orientation of the (002) plane parallel to the substrate. The results of optical transmittance of the CdZnS film show that absorption edge is shifted to ZnS and optical bandgap was larger wish increasing ZnS content. The resistivity of the CdZnS film is decreasing with increasing ZnS content and mininum for 20 mole%.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.28-31
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• 2002

The Cdl-xZnxTe film was fabricated by thermal evaporation for the flat-panel X-ray detector. The stoichimetric ratio and the crystal structure of a polycrystalline Cd$_{1-x}$ Zn$_{x}$Te were investigated by EPMA and XRD, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in the polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$_{0.7}$Zn$_{0.3}$Te thin film were measured to 0.37 nA/cm$^2$ and 260 pc/cm$^2$ at an applied voltage of 2.5 V/${\mu}{\textrm}{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$_{1-x}$ Zn$_{x}$Te detectors reduced the leakage current and improved the signal to noise ratio significantly.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.107-111
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• 2019

We report the fabrication of a CdS/CuInGaSe (CdS/CIGS) structure with carbon nanotubes and its application as a photocathode for photoelectrochemical water splitting. CIGS thin films were fabricated using co-evaporation by RF magnetron sputtering, while CdS was fabricated by chemical bath deposition. Spray coated multi-wall carbon nanotube (CNT) film on CdS/CIGS thin film was investigated as a photocathode. The CNT-coated CdS/CIGS showed superior photocurrent density and exhibited improved photostability.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2191-2194
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• 2013

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.