• Title/Summary/Keyword: CARRIER

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Performance Comparison of Trellis Coded Multi-Carrier CDMA SYstem with Transmite/Rceive Antenna Diversity in Indoor Radio Channel (실내 무선 채널에서 송신/수신 안테나 다이버시티를 적용한 Trellis 부호화된 Multi-Carrier CDMA 시스템의 성능 비교)

  • 노재성;이찬주;김언곤;조성준
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.8B
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    • pp.1348-1356
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    • 2000
  • In this paper, we proposed a trellis coded Multi-Carrier CDMA 16 QAM system with multiple transmit/receive antenna diversity technique, which is simple and suitable for indoor wireless communications. The proposed multiple transmit/receive antenna diversity technique is that the transmitter sends a trellis coded Multi-Carrier CDMA 16 QAM signal from multiple transmitting antennas with intentional time delays, which makes a receiver possible to distinguish and combine the signals from different antennas. In wireless indoor communication system, if we allow the increase of the complexity of the system, it is also possible to achieve additional diversity gain in the performance with the combination of the proposed technique and the conventional receiving antenna diversity. Furthermore, we have found that the proposed trellis coded Multi-Carrier CDMA 16 QAM system, which employs multiple transmit/receive antenna, is less sensitive to the multiple user interference and fading than conventional receiving antenna diversity systems.

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Inter-carrier Interference Reduction Scheme for SFBC-OFDM Systems

  • Kim, Kyung-Hwa;Seo, Bangwon
    • ETRI Journal
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    • v.36 no.5
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    • pp.783-790
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    • 2014
  • In this paper, we first analyze carrier-to-interference ratio performance of the space-frequency block coded orthogonal frequency-division multiplexing (SFBC-OFDM) system in the presence of phase noise (PHN) and residual carrier frequency offset (RCFO). From the analysis, we observe that conventional SFBC-OFDM systems suffer severely in the presence of PHN and RCFO. Therefore, we propose a new inter-carrier interference (ICI) self-cancellation method - namely, ISC - for SFBC-OFDM systems to reduce the ICI caused by PHN and RCFO. Through the simulation results, we show that the proposed scheme compensates the ICI caused by PHN and RCFO in Alamouti SFBC-OFDM systems and has a better performance than conventional schemes.

Electrical Drift Mobility in the Cholesteryl Benzoate (Cholestric 액정 Cholesteryl Benzoate에서 Drift Mobility측정)

  • 강태원;김화택
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.15 no.2
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    • pp.19-21
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    • 1978
  • The electrical drift mobility of charge carrier of Cholesteryl Benzoate was measured by Polarity inversion method in the temperature range 140~ 185$^{\circ}C$. with a view to revealing the mechanism of charge carrier transport. The electrical drift mobility of charge carrier of that increased from 2.5$\times$10-7$\textrm{cm}^2$/V.sec to 2.0$\times$10-6$\textrm{cm}^2$/v.sec as the temperature increased. As a result of the experiment, the mechanism of current transport is believed to be ionic mechanism.

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A Unified Carrier Based PWM Method In Multilevel Inverters

  • Nho Nguyen Van;Youn Myung Joong
    • Journal of Power Electronics
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    • v.5 no.2
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    • pp.142-150
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    • 2005
  • This paper presents a systematic approach to study the carrier based pulse width modulation (PWM) techniques applied to diode-clamped and cascade multilevel inverters by using multi-modulating patterns. This method is based on the description of controllable redundant parameters in the modulating signals. A unified mathematical formulation is presented for carrier based PWM methods, which obtains outputs similar to the corresponding space vector PWM. A full and separate control of the fundamental voltage, vector redundancies and phase redundancies can be obtained in the carrier based PWM. In this paper, the proposed PWM method and corresponding algorithm for generating multi-modulating signals will be formulated and demonstrated by our simulations.

Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs (나노급 소자의 핫캐리어 특성 분석)

  • Na Jun-Hee;Choi Seo-Yun;Kim Yong-Goo;Lee Hi-Deok
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.327-330
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    • 2004
  • It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

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Design of 10 GbE Optical Communication System Using Multi Carrier Generation Module (Multi Carrier Generation Module을 이용한 10 GbE 광전송 시스템 설계)

  • Kim, Hyung Hwan;Kang, Eun Kyun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.11
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    • pp.3-8
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    • 2016
  • In this paper, we design to generate 12.5 GHz spaced 256 number of multi-carrier generation module using 32 laser diodes. We modulate the generated multi-carrier generation module by 12.4 Gbps, and confirm the performance of optical channels passing through recirculating loop up to 1000km distance. An experimental result shows that the carrier away from the laser diode is significantly influence by noise effect.

Carrier based SVPWM Method for Multi-Level System Considering Harmonic Distortion Factor

  • Lee, Yo-Han;Kim, Dong-Hyun;Hyun, Dong-Seok
    • Journal of Power Electronics
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    • v.1 no.1
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    • pp.26-35
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    • 2001
  • In most inverter/converter applications SVPWM method is a preferred approach since it shows good characteristics in linear modulation range and waveform quality. In this paper, we propose a new carrier based SVPWM method for multi-level system, First, we survey the conventional carrier based SVPWM method, and investigate the problem of the conventional one for the multi-level system with the focus on the switching frequency harmonic flux trajectories. Finally, we propose a new carrier based SVPWM method that can reduce harmonic distortion. Simulation and experimental results are given for verification of the proposed SVPWM method.

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Alternate Time-Switched Multiplexed Space-Frequency Block Coding technique for Single-Carrier System (단일 반송파 전송 시스템을 위한 교번 스위칭 다중화 공간 주파수 블록 코딩 기법)

  • Jung, Hyeok Koo
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.65 no.4
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    • pp.316-320
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    • 2016
  • This paper proposes an alternate time-switched multiplexed space-frequency block coding technique for single-carrier modulation with frequency domain equalization. The traditional multiplexed space-frequency block coding technique for single-carrier modulation uses multiple groups of two transmitters and suppresses the interference signals of other SFBC groups at the receiver. In this paper, we reconfigure transmit signals to adapt them for alternate time-switched multiplexed SFBC for single-carrier modulation with frequency domain equalization and receiver structures and propose a structure for transmitter and receiver, show that its performance is better than the traditional algorithm by simulations.

Measurement of a Threshold Initiation Carrier Density for a Reduction in Gas Breakdown Voltage

  • Park, Hyunho;Kim, Youngmin
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2421-2424
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    • 2018
  • A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.