• Title/Summary/Keyword: C3P

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Fabrication of polycrystalline 3C-SiC thin film diodes (다결정 3C-SiC 박막 다이오드의 제작)

  • Ahn, Jeong-Hak;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.348-349
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    • 2007
  • This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

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A Study on the Upset Prevention & Recovery Training Method for Navy Fixed Wing Pilots Using P-3 Simulator (P-3C 시뮬레이터를 활용한 해군 고정익조종사 UPRT 훈련 방안에 대한 연구)

  • Jung-bong Lee
    • Journal of Advanced Navigation Technology
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    • v.27 no.3
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    • pp.293-299
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    • 2023
  • UPRT(Upset Prevention And Recovery Training) is an accident prevention training program developed over a three-year period after the main cause of aircraft accidents in commercial aviation between 2001 and 2011 was analyzed as LOC-I(Loss Of Control Flight). In 2014, ICAO presented UPRT for fixed-wing aircraft through Doc.10011(Manual On Aeroplane Upset Prevention And Recovery Training) and recommended mandatory implementation to Contracting States from March 2019. Since naval P-3C is a major mission of maritime patrol and anti-submarine warfare, it takes a lot of time to fly at low altitude (70-600 m), and the majority of P-3C pilots have experienced spatial disorientation, so Upset prevention and recovery training is essential for naval P-3C pilots. To this end, this study intends to present measures for UPRT from limited conditions using the P-3C simulator owned by the Navy.

Occurrence of Tn3 Sequence Upstream of aacC2 Gene in Gentamicin Resistance R Plasmids (Gentamicin 저항성 R 플라스미드에 존재하는 aacC2 유전자의 상류부위에서 Tn3의 출현)

  • 한효심;김남덕;이영종;이효연;정재성
    • Korean Journal of Microbiology
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    • v.33 no.3
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    • pp.165-169
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    • 1997
  • Two gentamicin resistance R plasmids, pGM5 and pGM6, containing aacC2 gene were selected from environmental isolates. The gentamicin resistance determinants of R plasmids were cloned into the BamHI site of pUC18. Restriction enzyme map of inserted region of recombinant plasmids, pSYS and pSY6, and PCR results indicated that Tn3 sequence was located upstream of gentamicin resistance gene. Based on the restriction maps and susceptibility tests, it was concluded that the sequence of bla and 3' inverted repeat of Tn3 play a important roles in the expression of gentamicin resistance gene.

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Production of P(3-hydroxybutyrate-3-hydroxyvalerate) and P(3-hydroxybutyrate-4-hydroxybutyrate) Using Transformant Alcaligenes latus Enforcing Its Own phbC Gene

  • Seo, Il-Seon;Jung, Young-Mi;Lee, Yong-Hyun
    • Journal of Microbiology and Biotechnology
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    • v.11 no.2
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    • pp.333-336
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    • 2001
  • An isolated phbC gene from Alcaligenes latus was reintroduced into the parent A. latus through the transformation process, and the effect of the amplified phbC gene on the biosynthesis of P(3-hydroxybutyrate-3-hydroxyvalerate) [P(3HB-3HV)] and P(3-hydroxybutyrate-4-hydroxybutyrate) [P(3HB-4HB)] in the transformant A. latus was investigated. The biosynthesis rate and content of the above copolymers increased up to 1.3-fold after enforcing its own phbC gene, and the molar fractions of 3HV and 4HB in P(3HB-3HV) and P(3HB-4HB) also changed remarkably from 35.0 to 48.0% and from 34.0 to 56.0%, respectively, showing a critical role of PHB synthase which catalyzes the polymerizing reactions between eiher 3HV or 4HB from precursor compounds and 3HB.

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Refinement of the Structure of p-Dimethylaminobenzaldehyde 4-(p-Ethoxyphenyl) Thiosemicarbazone (p-Dimethylaminobenzaldehyde 4-(p-Ethoxyphenyl) Thiosemicarbazone구조의 정밀화)

  • Seo, Il-Hwan;Seo, Chu-Myeong;Park, Yeong-Ja
    • Korean Journal of Crystallography
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    • v.2 no.1
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    • pp.12-16
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    • 1991
  • C18H22N4OS, Mr=342.47, monoclinic, P2₁/c,a=11.802(2), b=31.962(2), c=9.829(2)A, β=100.12(1)˚, V=3694.8A3,F(000)=1472, Z=8, Dx=1.246 Mg m-3, Dm=1.17Mg m-3,λ=0.71073 A, μ=0.15mm-1, T=294 K. final R=0.0856 for 3718 observed reflection (Fo>3σ(Fo)) There are two molecules in an asymmetric unit and a major difference between these molecules is in the C(9)-N(1)-C(6)-C(7) torsion angles [58.8(8)˚and 1(1)˚]. Both molecules have intramolecular N(1)-H(10)'N(3) hydrogen bonds [ 2.613(7) and 2.566(7) A] and assume V-shaped conformation with N(2) atoms at the verices. The two independent molecules are linked by the two N(2)-H(11)'S' hydrogen bonds[3.367(5) A and 3.421(4)A] and the dimergen are held together by van der Waals forces.

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$New η^3-Allyl-Alkenyl- and η^3-Allyl-Alkynyl-Ir-Cp^* Compounds from Reactions of [Cp^*Ir(η^3-CH_2CHCHPh)(NCMe)]^+ with Alkynes$

  • Jin, Jong Sik;Jong, Dae Seong;Kim, Mi Yeok;Lee, Hyeon Gwi
    • Bulletin of the Korean Chemical Society
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    • v.22 no.7
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    • pp.739-742
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    • 2001
  • Reactions of [Cp*Ir(η3-CH2CHCHPh)(NCMe)]OTf (1) with HC≡CR (R = H, CH2OH) in the presence of bases, B (B=NEt3, PPh3, AsPh3) produce stable Cp*Ir-η3-allyl-alkenyl compounds [Cp*Ir(η3-CH2CHCHPh)(-CH=CH-+B)]OTf (2) and [Cp*Ir(η3-CH2CHCHPh)(-C(CH2OH)=CH- +PPh3)]OTf (3), respectively in high yields. Cp*Ir-η3-allyl-alkynyl compounds Cp*Ir(η3-CH2CHCHPh(-C≡C-R') (4) and Cp*(η3-CH2CHCHPh)Ir-C≡C-p-C6H4-C≡C-Ir(η3-CH2CHCHPh)Cp* (5) have been prepared from reactions of 1 with HC≡CR'(R' = C6H5, p-C6H4CH3, C3H5, C6H9) and HC≡C-p-C6H4-C≡CH in the presence of NEt3.

Incorporation of RAPD linkage Map Into RFLP Map in Glycine max (L, ) Merr (콩의 RAPD 연관지도를 RFLP 연관지도와 합병)

  • Choi, In-Soo;Kim, Yong-Chul
    • Journal of Life Science
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    • v.13 no.3
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    • pp.280-290
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    • 2003
  • The incorporation of RAPD markers into the previous classical and RFLP genetic linkage maps will facilitate the generation of a detailed genetic map by compensating for the lack of one type of marker in the region of interest. The objective of this paper was to present features we observed when we associated RAPD map from an intraspecific cross of a Glycine max$\times$G. max, 'Essex'$\times$PI 437654 with the public RFLP map developed from an interspecific cross of G. max$\times$G. soja. Among 27 linkage groups of RAPD map, eight linkage groups contained probe/enzyme combination RFLP markers, which allowed us the incorporation of RAPD markers into the public RFLP map. Map position rearrangement was observed. In incorporating L.G.C-3 into the public RFLP linkage group a1 and a2, both pSAC3 and pA136 region, and pA170/EcoRV and pB170/HindIII region were in opposite order, respectively. And, pk400 was localized 1.8 cM from pA96-1 and 8.4 cM from pB172 in the public RFLP map, but was localized 9.9 cM from i locus and 18.9 cM from pA85 in our study. A noticeable expansion of the map distances in the intraspecific cross of Essex and PI 437654 was also observed. Map distance between probes pA890 and pK493 in L.G.C-1 was 48.6 cM, but it was only 13.3 cM in the public RFLP map. The distances from the probe pB32-2 to pA670 and from pA670 to pA668 in L.G. C-2 were 50.9 cM and 31.7 cM, but they were 35.9 cM and 13.5 cM in the public RFLP map. The detection of duplicate loci from the same probe that were mapped on the same or/and different linkage group was another feature we observed.

Electrical characteristics of polycrystalline 3C-SiC thin film diodes (다결정 3C-SiC 박막 다이오드의 전기적 특성)

  • Chung, Gwiy-Sang;Ahn, Jeong-Hak
    • Journal of Sensor Science and Technology
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    • v.16 no.4
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    • pp.259-262
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    • 2007
  • This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

Effects of 2-Chloroethylphosphnic Acid on Ripening of Tobacco Leaves (2_Chloroethylphosphonic Acid가 잎담배 성숙에 미치는 영향)

  • Il Hou;Han-Seo Koo
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.12
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    • pp.71-75
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    • 1972
  • To investigate the effects of C. E. P. A(2-chloroethyl phosphonic acid) on the ripening of tobacco leaf, the effects on the yield and quality of leaf tobacco, this experiments were carried out during the period of from 1970 to 1971 at tobacco experiment station, Sosa, Korea and 3 locations. The results are summarized as follows. 1. The higher the C. E. P. A concentration was, the more the leaf ripening was accelerated. During the period from 3 to 4 days after treatment, the differences of leaf ripening among levels were prominent. 2. Treatment with C. E. P. A only on the upper surface of the tobacco leaf, accelerated the ripening of that particular part treated, but not apparently the other parts of leaf. 3. Distinctive acceleration of leaf ripening was, obserbed in the fully develope1lower leans, however, the upper leaves were indistinctive. 4. The higher C. E. P. A concentration was, the more the effect of ripening acceleration was. But the yield was reduced over 900ppm because of the low of growth of leaves and the reduced yield was 90% at the 3, 000ppm. So the proper concentration was regarded as 900ppm. 5. In the view point of the days of C. E. P. A ripening acceleration, it was shortened one days at 100 ppm, three days at 300ppm, three days at 450ppm, four days at 900ppm, seven days at 3, 000ppm. 6. In the point of curing process, it was possible that the curing time and fuel was reduced 29% and 45% respectively in the C. E. P. A treatment than the check. 7. Therefore, if it is treated the C. E. P. A at 900ppm in the tobacco cultivation, the quality shall be increased 13.5% and the price shall be increased 12% in the 10 Are. In the point of subsidiary affect, it is possible that the C. E. P. A ripening acceleration is shortened about 7 days at 3, 00ppm and curing time is shortened about 24 hours.

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