• Journal of Animal Science and Technology
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• v.47 no.6
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• pp.985-1000
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• 2005

In vitro anaerobic incubations of timothy (Phleum pretense L.) forage with bovine rumen fluid were conducted at 39℃ for 0, 3, 6, 9, 24, and 36 h in three trials to examine the biohy- drogenation of linolenic (C18:3) and linoleic acids (C18:2) and their bypass from the rumen. The objectives of the first trial was to study the effect of growth stage (stem elongation, early heading, late heading, and early flowering) and N-fertilization (0 and 120 kg N ha－1) on in vitro biohydrogenation of C18:2 and C18:3. The hydrogenable fraction, the effective disappearance and the bypass of C18:2 and C18:3 were high in timothy harvested at stem elongation, and decr- ease linearly with maturity. The N-fertilization increased the hydrogenable fraction of C18:3, the effective disappearance and the bypass of C18:2 and C18:3. However, the rate of disappearance of C18:2 and C18:3 were not affected by maturity and N-fertilization (P>0.1). In trial 2, the effect of timothy conservation method on in vitro C18:2 and C18:3 biohydrogenation was determined. Silage had the highest effective disappearance of C18:2 and C18:3, and grass hay had lowest one. The amounts of C18:2 and C18:3 biohydrogenated were higher in haylage and silage than in grass hay. Comparative to haylage timothy, the bypass of C18:3 was higher in fresh grass, wilted grass and grass hay. The bypass of C18:2 was higher in fresh grass and silage in comparison to grass hay and haylage. In trial 3, the effects of formic acid and Lactobacillus plantarum inoculum addition to timothy haylage and silage on C18:2 and C18:3 disappearance and bypass were studied. Haylage and silage additives had no effect (P>0.1) on effective disappearance and bypass of C18:2 and C18:3. The addition of formic acid increased the rate of biohydrogenation of C18:3 in haylage and silage, but it decreased the hydrogenable fraction of C18:2 in silage. The results of these three incubation trials show that the hydrogenable fraction and the bypass of C18:2 and C18:3 in timothy decreased with maturity and increased with N-fertilization. Higher amount of C18:2 and C18:3 were biohydrogenated in haylage and silage than in grass hay, and C18:3 ruminal disappearance was higher in fresh grass, wilted grass and grass hay than in haylage.

• Membrane Journal
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• v.25 no.1
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• pp.42-47
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• 2015

In this study, PEBAX[poly(ether-block-amide)]-NaY zeolite composite membranes were prepared, and those prepared membranes were studied on permeability of $C_3H_6$ and $C_3H_8$, and selectivity ($C_3H_6/C_3H_8$). NaY zeolite particles in PEBAX-NaY zeolite composite membranes was dispersed as aggregated particles with the size $0.5{\sim}2.5{\mu}m$ by SEM observation. TGA measurement showed the weight loss change resulted from the amount of NaY zeolite when NaY zeolite was added into PEBAX. By gas permeation experiment, the permeabilities of $C_3H_6$ and $C_3H_8$ were decreased by the more addition NaY zeolite in PEBAX. Overall, $C_3H_6$ was having higher permeability than $C_3H_8$. The selectivity $C_3H_6/C_3H_8$ was decreased by the more NaY zeolite in PEBAX.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.413-419
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• 2002

Particulate composites of $Al_2O_3$/TiC/SiC, $Al_2O_3$/TiC and $Al_2O_3$/SiC have been fabricated by hot pressing and their R-curve behaviors and mechanical properties were investigated. $Al_2O_3$ containing 30 vol% TiC particles showed higher toughness by 8% than that for monolithic alumina and its fracture strength was increased significantly by approximately 30%. On the other hand, the addition of 30 vol% SiC of $3{\mu}m$ in $Al_2O_3$ decreased the fracture strength slightly but induced a rising R-curve behavior owing to the strong crack bridging of SiC particles. In case of $Al_2O_3$/TiC/SiC, arising R-curve behavior was also observed and the fracture toughness reached 6.6 MPa${\cdot}\sqrt{m}$ at the crack length of $1000{\mu}m$, which was lower than that of $Al_2O_3$/SiC, however, while the fracture strength was higher by about 20%. The fracture toughness seemed to be decreased as smaller TiC particles roughened the SiC interface and pullout of the SiC particles for crack bridging became less active.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.311-315
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on AlN(0.1 $\mu$m)/3C-SiC(1.0 $\mu$m) suspended membranes by surface micro-machining technology. The 3C-SiC and AlN thin films which have wide energy band gap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3CSiC RTD(resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR(thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 ppm/$^{\circ}C$ within a temperature range from 25 $^{\circ}C$ to 50 $^{\circ}C$ and -1040 ppm/$^{\circ}C$ at 500 $^{\circ}C$. The micro heater generates the heat about 500 $^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than Pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.487-490
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• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.97-105
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• 1998

Antioxidation mechanism of Al metal powders on $Al_2O_3-C$ refractory was investigated in temperature range from 800 to $1400^{\circ}C$. The addition of 5 wt% Al metal powders suppressed the oxidation of carbon in $Al_2O_3$-C sample. The carbons were distributed uniformly on the surface and the interface of the $Al_2O_3$-C-Al. Reaction products of $Al_4C_3$ and AIN were found with a composition of Al-C at temperatures between 800 and $1200^{\circ}C$ and transformed to $Al_2O_3$ above $1400^{\circ}C$. Cavity structures related to the to the formation of $Al_4C_3$ were observed for the AI-C after heating at $1000^{\circ}C$ ofr 1 hour. Thermodynamic mechanism was considered to discuss the formation $Al_4C_3$, AlN and their transformation to $Al_2O_3$, which leads to the effect of oxidation resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.934-941
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• 1997

C $r_{3}$ $C_{2}$-20wt% NiCr 이 크래드된 분말을 이용하여 HVOF 용사층의 특성(미세조직, 결정상, 경도 그리고 erosion rate)에 미치는 연료/산소 비(=3.2,3.0,2.8,2.6)의 영향을 조사했다. 실험범위 내에서 F/O=3.0의 경우가 C $r_{3}$ $C_{2}$-20wt%(NiCr)크래드 분말의 최적용사조건 이었다. XRD분석결과 F/O비에 관계없이 카바이드분해는 일어 났다. C $r_{3}$ $C_{2}$에서C $r_{7}$ $C_{3}$로의 상변화는 F/O비가 감소함에 따라 증가했다. 열처리 온도가 높아짐에 따라 C $r_{7}$ $C_{3}$분율은 증가 하였으며, 100$0^{\circ}C$에서 50시간 열처리후 용사층의 주된상은 C $r_{7}$ $C_{3}$이였다. 용사상태에서 경도값은 F/O=3.0조건으로 용사된 코팅층이 $H_{v300}$-1040으로 가장 높았으며, 공기중에서 $600^{\circ}C$, 50시간 열처리한 후, 경도값은 1340으로 증가하였다. 그리고 80$0^{\circ}C$열처리 후 경도값은 약간 감소하였다. 그러나 100$0^{\circ}C$ 열처리 후에도 1060정도로 용사상태의 경우 보다는 높은 경도값을 유지하였다. 이와같이 경도값이 증가하는 이유는 열처리에 따라 용사층이 치밀하게 되고 또한 C $r_{2}$ $O_{3}$의 산화물이 C $r_{3}$ $C_{2}$/C $r_{7}$ $C_{3}$ 내에 생성되어 탄화물/산화물 복합체를 이루기 때문으로 생각된다. 용사상태에서 drosion rate는 F/O비에 따라 2.6-3.05x$10^{-4}$mg/g까지 변화하였다. 또한 $600^{\circ}C$열처리 후에는 2.15-2.3 x $10^{-4}$mg/g이였으며, 80$0^{\circ}C$에서 열처리한 후에는 2.3-2.4x$10^{-4}$mg/g으로 $600^{\circ}C$열처리후 보다 약간 높은 결과를 보였다.결과를 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.