• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.319-323
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• 2007

This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC thin film was deposited by APCVD method using only Ar carrier gas and single precursor HMDS at $1100^{\circ}C$. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation. Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and the roughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of the grown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion, high frequency and MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.113-113
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on $AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 $ppm/^{\circ}C$ within a temperature range from $25^{\circ}C$ to $50^{\circ}C$ and -1040 $ppm/^{\circ}C$ at $500^{\circ}C$. The micro heater generates the heat about $500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Proceedings of the Korea Concrete Institute Conference
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• 2009.05a
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• pp.525-526
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• 2009

On this paper we induce calcite($CaCO_3$) precipitation using microbial biomineralization of the Sporosarcina pasteurii and evaluate required performance evaluation by adjusting it to mortar. As a result carbonation normal mortar test piece(C3S-W) and mortar test piece(C3S-S.p) mixed with Sporosarcina pasteurii, reaction of C3S-S.p was late than C3S-W. Also, in the case of carbonation experiment of C3S-S.p curing in the Urea-CaCl2 aqueous solution(Medium) during 28days and durability of the C3S-W, durability of the mortar test piece(C3S-S.p) mixed with Sporosarcina pasteurii become higher than normal mortar test piece(C3S-W).

• Membrane Journal
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• v.24 no.4
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• pp.259-267
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• 2014

PEBAX[poly(ether-block-amide)-ZIF-8(zeolitic imidazolate framework) composite membranes were prepared with different amounts of ZIF-8; 0, 1, 3, 7, 10, and 20 wt%. Gas permeation experiment were performed by varying the temperature of 25, 35, $40^{\circ}C$ under condition $6kgf/cm^2$. Gas permeability of $C_3H_6$, $C_3H_8$ and selectivity ($C_3H_6/C_3H_8$) were investigated by increasing the amount of ZIF-8 in the PEBAX. The gas permeability of $C_3H_6$ and $C_3H_8$ increased as ZIF-8 content increased among 0 to 7 wt% range and decreased among 7 to 20 wt% range. When the ZIF contents of PEBAX-ZIF composite membrane were 7 wt%, the selectivity ($C_3H_6/C_3H_8$) was taken between 3.6 and 3.8 value and also had the lowest activation energy.

• Proceedings of the Microbiological Society of Korea Conference
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• 2008.05a
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• pp.23-25
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• 2008

Serum complement proteins comprise an important system that is responsible for several innate and adaptive immune defence mechanisms. There were three well described pathways known to lead to the generation of a C3 convertase, which catalyses the proteolysis of complement component C3, and leads to the formation of C3 opsonins (C3b, iC3b and C3d) that fix to bacteria. A pivotal step in the complement pathway is the assembly of a C3 convertase, which digests the C3 complement component to form microbial-binding C3 fragments recognized by leukocytes. The spleen clears microorganisms from the blood. Individuals lacking this organ are more susceptible to Streptococcus pneumoniae. Innate resistance to S. pneumoniae has previously been shown to involve complement components C3 and C4, however this resistance has only a partial requirement for mediators of these three pathways, such as immunoglobulin, factor B and mannose-binding lectin. Therefore it was likely that spleen and complement system provide resistance against blood-borne S. pneumoniae infection through unknown mechanism. To better understand the mechanisms involved, we studied Specific intracellular adhesion molecule-grabbing nonintegrin (SIGN)-R1. SIGN-R1, is a C-type lectin that is expressed at high levels by spleen marginal-zone macrophages and lymph-node macrophages. SIGN-R1 has previously been shown to be the main receptor for bacterial dextrans, as well as for the capsular pneumococcal polysaccharide (CPS) of S. pneumoniae. We examined the specific role of this receptor in the activation of complement. Using a monoclonal antibody that selectively downregulates SIGN-R1 expression in vivo, we show that in response to S. pneumoniae or CPS, SIGN-R1 mediates the immediate proteolysis of C3 and fixation of C3 opsonins to S. pneumoniae or to marginal-zone macrophages that had taken up CPS. These data indicate that SIGN-R1 is largely responsible for the rapid C3 convertase formation induced by S. pneumoniae in the spleen of mice. Also, we found that SIGN-R1 directly binds C1q and that C3 fixation by SIGN-R1 requires C1q and C4 but not factor B or immunoglobulin. Traditionally C3 convertase can be formed by the classical C1q- and immunoglobulin-dependent pathway, the alternative factor-B-dependent pathway and the soluble mannose-binding lectin pathway. Furthermore Conditional SIGN-R1 knockout mice developed deficits in C3 catabolism when given S. pneumoniae or its capsular polysaccharide intravenously. There were marked reductions in proteolysis of serum C3, deposition of C3 on organisms within SIGN-$R1^+$ spleen macrophages, and formation of C3 ligands. The transmembrane lectin SIGN-R1 therefore contributes to innate resistance by an unusual C3 activation pathway. We propose that in the SIGN-R1 mediated complement activation pathway, after binding to polysaccharide, SIGN-R1 captures C1q. SIGN-R1 can then, in association with several other complement proteins including C4, lead to the formation of a C3 convertase and fixation of C3. Therefore, this new pathway for C3 fixation by SIGN-R1, which is unusual as it is a classical C1q-dependent pathway that does not require immuno globulin, contributes to innate immune resistance to certain encapsulated microorganisms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.135-139
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• 2004

The layered organic-inorganic hybrid compounds($C_6H_5CH_2NH_3)_2CuCl_4$ and ($NH_3C_6/H_4C_2H_4_6/H_4NH_3)CuCl_4$ have been directly synthesized. From the X-ray diffraction data and the organic guest size, the orientation of the intercalated organic amine was determined. The inorganic sheets consist of $CuCl_4^{2-}$layers of comer-sharing octahedra copper chloride. The protonated organic amine was intercalated into the $CuCl_4^{2-}$layers with bilayer structure for ($C_6H_5CH_2NH_3)_2CuCl_4$ and monolayer structure for ($NH_3C_6/H_4C_2H_4_6/H_4NH_3)CuCl_4$.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.30 no.4
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• pp.595-600
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• 1997

The oil content and composition of squid visera were determined to obtain data for utilization of this by-product. There was no significant difference in the glycolipid (GL) and phospholipid (PL) content in Illex argentinus and Todarodes pacificus, but neutral lipid (NL) was different (p<0.05). The viscera oil of I. argentinus contained $30.50\%$ total lipid which consisted of $96.24\%$ NL, $2.63\%$ GL, $2.37\%$ PL, and contained $644mg\%$ cholesterol. The viscera oil of T. pacificus contained $30.20\%$ total lipid which consisted of $94.82\%$ NL, $2.85\%$ GL, $2.34\%$ PL, and contained $1,224\;mg\%$ cholesterol. The NL, GL and PL of viscera oil in I. argentinus mainly consist of triglyceride $(44.01\%)$, esterified steryl glycosides $(58.95\%)$ and phosphatidyl cholines $(32.36\%)$, respertively. Those of viscera oil in T. pacificus mainly consist of triglyceride $(39.63\%)$, monogalactosyl diglycerides $(51.67\%)$ and phosphatidyl cholines $(31.98\%)$, respectively. The major fatty acids of the viscera oil of I. argentinus and T. pacificus were C16 : 0, $C16\;:\;0,\;C18\;:\;1\omega9,\;C20\;:\;4\omega6,\;C20\;:\;5\omega3,\;C22\;:\;6\omega3$. In Illex argentinus, the fatty acids of NL mainly were $C16\;:\;0,\;C18\;:\;1\omega9,\;C20\;:\;4\omega6,\;C20\;:\;5\omega3,\;C22\;:\;6\omega3$. PL were $C16\;:\;1\omega7,\;C20\;:\;5\omega3,\;C22\;:\;6\omega3$ and GL were $C18\;:\;1\omega9,\;C20\;:\;5\omega3,\;22\;:\;6\omega3$. The major fatty acids of NL in T. pacificus were $C16\;:\;0,\;C18\;:\;1\omega9,\;C20\;:\;4\omega6,\;C20\;:\;5\omega3,\;C22\;:\;6\omega3$, PL were $C16\;:\;1\omega7,\;C20\;:\;5\omega3,\;C22\;:\;6\omega3$, and GL were $C18\;:\;1\omega9,\;C20\;:\;5\omega3,\;C22\;:\;6\omega3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.