• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.21-26
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• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Biomedical Science Letters
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• v.6 no.3
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• pp.165-170
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• 2000

Vacuolar (H$^{+}$)-ATPase (V-ATPase) is an intracellular protein which consists of multiple subunits. It carries out acidification by pumping protons in the cell. This enzyme has also been found in the synaptic vesicles and may play an important role in the neurotransmission. We cloned cDNA fragments encoding the 16 kDa subunit of V-ATPase from the rat brain by RT-PCR and PCR using total RNA or recombinant phage DNA as templates. They contained the full coding sequences (468 bp) and one nucleotide at 3' region turned out to be different (A to C) when compared to the liver counterpart. However, this polymorphic difference did not cause any significant change in the primary structure of the protein because both GCA and GCC code for alanine. Our study would contribute to the understanding of the function of 16 M)a V-ATPase in the brain and of the mechanisms of neurotransmission.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.938-940
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• 1999

We have fabricated SiC Schottky diode for high temperature applications. SiC thin film for drift region has been deposited by ICP-CVD. In order to establish metallization conditions, we have extracted the device parameters of the Schottky diode from the forward I-V characteristics and the C-V characteristics as a function of temperature. The ideality factor was varied from 2.07 to 1.15 and the barrier height was also varied from 1.26eV to 1.92eV with increase of temperature. The reverse blocking voltage was 183 V.

• Korean journal of food and cookery science
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• v.11 no.2
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• pp.153-157
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• 1995

The effect of low concentrations of ethanol(3∼7%, v/v) in culture broth as an antibacteriaB agent against Vibrio parahaemolyticus was tested at -20, 5, 35, 45 and 5%. Increasing concentrations of ethanol progressively inhibited initial growth of t: parahaemelyticus at 35$^{\circ}C$. Growth occured at 5% ethanol, but only after a prolonged lag period. At 7% ethanol, the number of viable cells of V parahae-molyticus declined during incubation. Culture broth containiilg 3∼7% ethanol was inoculated with 106∼107'cells/uu of V Parahaemolyticus and incubated at low temperatures(5$^{\circ}C$, -20$^{\circ}C$) and high tem-peratures(45$^{\circ}C$, 50$^{\circ}C$). In the presence of 5 or 7ft of ethanol, the viability in the cells incubated at high temperatures decreased rapidly. Rate of death increased with increasing concentration of etha-nol.

• ETRI Journal
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• v.44 no.5
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• pp.859-874
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• 2022

This paper presents a low-power and lightweight human body communication (HBC) receiver with an embedded dummy electrode for improved signal acquisition. The clock data recovery (CDR) circuit in the receiver operates with a low supply voltage and utilizes a clock phase inversion scheme. The receiver is equipped with a main electrode and dummy electrode that strengthen the capacitive-coupled signal at the receiver frontend. The receiver CDR circuit exploits a clock inversion scheme to allow 0.9-V operation while achieving a shorter lock time than at 3.3-V operation. In experiments, a receiver chip fabricated using 130-nm complementary metal-oxide-semiconductor technology was demonstrated to successfully receive the transmitted signal when the transmitter and receiver are placed separately on each hand of the user while consuming only 4.98 mW at a 0.9-V supply voltage.

• Korean Journal of Crystallography
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• v.5 no.1
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• pp.1-6
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• 1994

Two possible space groups of the comfound, VP6N3018C24H:60, are: P 1, a=14.022(1), b=12.644(2), c= 12.640(1)A, a=8038(1), B=102.12(1), r=102.16(1), V=2124.1A3, Z=2, μ=0.47cm-1, d=1.46g/cm3, R=0.083 for 3350 independent reflections with Fo>4o IFI, and C2/c, a=19.32(2), b=16.32(2), c=14.02(1)A, B=105.98(5), β=105.98(5), V=4248.2A3, Z=4 R=0.083 for 1590 independent reflections with Fo>4c IFoI . In the space group P T, there are two monlecules in a unit cell. Vanadium atoms in the two monlecules occupy the two different special positions such that the complete monlecules are accomplished by the two independent center of symmetry. Therefore two different half molecules of bis(trimetaphosphate)vanadate and three molecules of tetraethylammonium are the asymmetric unit in a unit cell. In the space group C2/c, however, the vanadium atom is located at a special position with centrosymmetry, and a two-fold symmetry axis passes through C2/c, N2 and C25 atoms. Therefore the asymmrtic unit in a unit cell consists of a half molecule of bis(trimetaphosphate)vanadate and one and a half molecules of tetraethylammonium. All the molecular conformations in both space groups are very similar: six oxygen atoms coordinated to a vanadium atom in the bi s(trimetaphosphate)vanadate molecule form an octahedron and the four carbon atoms bonded to a nitrogen atom in the tetraethylammonium molecule are disordered so that the eight carbon atoms around nitrogen atom exhibit an irregular dodecahedral form.

• Journal of the Korean Institute of Landscape Architecture
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• v.40 no.3
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• pp.91-98
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• 2012

The objective of this study was to analyze the effects on the growth of Sedum species by different soil in shallow green roof module system, and to find the best soil mixture. The experiment used a module system, 7cm soil depth, five types of soil mixture ratio, and it was carried out on 7th Hoar rooftop in December of 2010. The growth status of the plant showed the most superior of the P5C7P2V1, next P10C1P2V1 and P1P1V1, P1 and C1 showed very poor growth. This result showed that the soil mixture ratio (P5C7P2V1) in green roof module system with minimum management can contribute to the proliferation of rooftop greening in urban settings.

• Journal of Radiation Protection and Research
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• v.26 no.3
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• pp.287-290
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• 2001

The 9.17MeV gamma-rays from the $^{13}C(p,\;{\gamma})^{14}N,\;^{14}N({\gamma},\;{\gamma})^{14}N$ reactions were measured. The incident 9.17MeV gamma-ray was produced from the $^{13}C(p,\;{\gamma})^{14}N$ reaction at Ep=1.75MeV resonance. The 1.75MeV proton beam was accelerated using the 3MV SNU-AMS Tandetron and 1.7MV KIGAM Tandem accelerators. The enriched 13C target was $121{\mu}g/cm^2$ self-supporting foil, and we used liquid nitrogen as a resonant absorption target. We used a HP-Ge detector with 30% efficiency and less 2keV energy resolution. We developed new method to detect the scattered 9.17MeV gamma-ray from the nitrogen target by using the energy difference between the Doppler shifted gamma-ray from the $^{13}C(p,\;{\gamma})^{14}N$ reaction and the resonant absorbed and rescattered gamma-ray from the $^{14}N({\gamma},\;{\gamma})^{14}N$ reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.19 no.2
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• pp.125-129
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• 1983

It is customary to assume that the resistance of a jull at uniform speed may be regarded as the sum of viscous and wavemaking component resistance, or C sub(i)=C sub(v)+C sub(w), where C sub(v) is regarded as a function of Reynolds Number R and C sub(w) a function of Froude Number F. Formulae have been obtained for ∂C sub(w)/∂R, ∂C sub(v)/∂F which may be relevant in seeking theoretical grounds for possible interaction between viscous and wavemaking component resistances. The values of ∂C sub(w)/∂R are small. In general they are smaller than corresponding values of ∂C sub(v)/∂R. But although these values are small it does not follow that they are entirely negligible. The Froude assumption that the rate of change of C sub(w) with R is zero must bel regarded as incorrect.