• The KIPS Transactions:PartB
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• v.15B no.6
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• pp.609-612
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• 2008

Let G = (V, E) be a simple undirected graph. The Minimum Vertex Cover (MVC) problem is to find a minimum subset C of V such that for every edge, at least one of its endpoints should be included in C. Like many other graph theoretic problems this problem is also known to be NP-hard. In this paper, we propose a genetic algorithm called LeafGA for MVC problem and show the performance of the proposed algorithm by applying it to several published benchmark graphs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.

• Communications of the Korean Mathematical Society
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• v.37 no.1
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• pp.17-29
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• 2022

A commutative ring with unity R is called an EM-ring if for any finitely generated ideal I there exist a in R and a finitely generated ideal J with Ann(J) = 0 and I = aJ. In this article it is proved that C(X) is an EM-ring if and only if for each U ∈ Coz (X), and each g ∈ C^* (U) there is V ∈ Coz (X) such that U ⊆ V, ${\bar{V}}=X$, and g is continuously extendable on V. Such a space is called an EM-space. It is shown that EM-spaces include a large class of spaces as F-spaces and cozero complemented spaces. It is proved among other results that X is an EM-space if and only if the Stone-Čech compactification of X is.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.760-769
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• 2000

Mechanical properties of HSLA cast steels alloyed with 0.15% Nb, Ti or V were tested as variations of austenizing temperatures and tempering times. The test results are as follows. The hardness of HSLA cast steels austenized for 2hrs at 115$0^{\circ}C$ was shown the highest value regardless of alloying elements and then decreased as the temperature decreased below 110$0^{\circ}C$. The hardness of HSLA cast steels with 0.15% Ti austenized for 2 hrs at $1150^{\circ}C$ was higher than that of any other HSLA cast steels, and chich was mainly attributed to the relatively high amount of bainite, and solid solution hardening. Charpy impact energy of HSLA cast steels was comparable to the C-Mn cast steel except HSLA cast steels with 0.15% Ti austenized at 115$0^{\circ}C$. The hardness of HSLA cast steels austenized for 2 hrs at $1150^{\circ}C$ increased at a ten-minute tempering, and after that, the hardness kept almost sililar level except HSLA cast steels with 0.15% V.

• Composites Research
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• v.32 no.5
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• pp.284-289
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• 2019

In the present paper, the dynamic force-moment equilibrium equations, driving power and energy equations are analyzed to formulate the equation for fuel economy(km/liter) equivalent to the driving distance (km) divided by the fuel volume (liter) of the vehicle, a selected model of gasoline powered KIA K3 (1.6v). In addition, the effects of the dynamic parameters such as speed of vehicle (V), vehicle total weight(M), rolling resistance ($C_r$) between tires and road surface, inclined angle of road (${\theta}$), as well as the aerodynamic parameters such as drag coefficient ($C_d$) of vehicle, air density(${\rho}$), cross-sectional area (A) of vehicle, wind speed ($V_w$) have been analyzed. And the possibility of alternative materials such as lightweight metal alloys, fiber reinforced plastic composite materials to replace the conventional steel and casting iron materials and to reduce the weight of the vehicle has been investigated by Ashby's material index method. Through studies, the following results were obtained. The most influencing parameters on the fuel economy at high speed zone (100 km/h) were V, the aerodynamic parameters such as $C_d$, A, ${\rho}$, and $C_r$ and M. While at low speed zone (60 km/h), they are, in magnitude order, dynamic parameters such as V, M, $C_r$ and aerodynamic ones such as $C_d$, A, and ${\rho}$, respectively.

• Communications of the Korean Mathematical Society
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• v.35 no.1
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• pp.1-12
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• 2020

A pathos block line cut-vertex graph of a tree T, written P BL_c(T), is a graph whose vertices are the blocks, cut-vertices, and paths of a pathos of T, with two vertices of P BL_c(T) adjacent whenever the corresponding blocks of T have a vertex in common or the edge lies on the corresponding path of the pathos or one corresponds to a block B_i of T and the other corresponds to a cut-vertex c_j of T such that c_j is in B_i; two distinct pathos vertices P_m and P_n of P BL_c(T) are adjacent whenever the corresponding paths of the pathos P_m(v_i, v_j) and P_n(v_k, v_l) have a common vertex. We study the properties of P BL_c(T) and present the characterization of graphs whose P BL_c(T) are planar; outerplanar; maximal outerplanar; minimally nonouterplanar; eulerian; and hamiltonian. We further show that for any tree T, the crossing number of P BL_c(T) can never be one.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.1
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• pp.1-7
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• 2004

This paper describes the carbonization characteristics of a phenolic resin deteriorated by tracking under the environment of a fire. In the experiment, a liquids droplet of 1[％] NaCl was dripped on the phenolic resin to cause a tracking with 110[V], 220[V] voltages applied. It can be addressed from the experimental results that when an insulator is carbonized by an external fire, its structure is amorphous. If an insulator is carbonized by electrical cause, on the other hand, its structure would be crystalline. In order to observe the surface change of the phenolic resin, the tracking process was analyzed by using SEM. In the case that the materials are carbonized under heat or fire, the exothermic peak appears around 500[$^{\circ}C$]. This is one of the important factors to determine the cause of fires. As a result of DTA, the exothermic peaks of an untreated sample showed at 333.4[$^{\circ}C$], 495.7[$^{\circ}C$] but those of a sample deteriorated by tracking appeared at 430.6[$^{\circ}C$], 457.6[$^{\circ}C$] in a voltage of 110[V], and at 456.2[$^{\circ}C$], 619.7[$^{\circ}C$] in a voltage of 220[V]. It is possible, therefore, to distinguish a virgin sample from carbonized samples(graphite) by the exothermic peak.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.211-220
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• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.