• Title/Summary/Keyword: C.V.

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Corona Electrets of Polyvinylidene Fluoride Film (폴리 불화 비닐덴 박막의 코로나 일렉트렛트)

  • 김충혁;권병휘;홍진웅;이준응
    • Electrical & Electronic Materials
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    • v.1 no.3
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    • pp.261-268
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    • 1988
  • 본 논문에서는 두께 50[.mu.m]의 미연신 .alpha.형 폴리비닐덴 후로라이드 필름을 시료로 선정, .+-.4~.+-.6[kV]사이의 코로나대전 전압을 인가하여 얻은 코로나 일렉트렛트로 부터 온도 범위 -100[.deg.C]-100[.deg.C] 사이에서 열자격전류를 측정한 결과, 저온으로 부터 .delta., ..gamma., .betha. 및 .alpha.인 4개의 TSC 피크를 얻었다. 이들 피크의 기원을 정성적으로 고찰한 결과, .delta., .gamma.피크는 비정질 영역에서 카보닐기, 주쇄 및 극성기들에 의한 쌍극자의 탈분극으로 또 70[.deg.C]부근에서 관측된 .betha.피크는 비정질 영역 또는 비정질과 결정질의 경계면에서 전극으로 부터 공간전하의 탈트랩으로 그리고 180[.deg.C]근방에서 관측된 .alpha.피크는 결정영역에 깊이 트랩된 캐이어들의 탈트랩으로 각각 피크가 나타나는 것으로 사료된다. .delta., .gamma., .betha.및 .alpha.인 4개의 TSC 피크에 대하여 초기 상승법으로 얻은 활성화 에너지는 각각 0.54[eV], 0.24[eV], 0.99[eV] 및 1.26[eV]를 얻었다.

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Characterization of Schottky diodes fabricated by various metals on SiC thin film grown by ICP-CVD (ICP-CVD로 성장된 SiC 박막위에 다양한 금속으로 제작된 Schottky diode의 특성 분석)

  • Ko, Suk-Il;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.440-442
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    • 2000
  • We have successfully fabricated SiC Schottky diodes using Al, Ni, Ti metallization systems. Schottky barrier height and other parameter have been measured by using I-V and C-V technique. The measured barreir heights depend on the metal and measurement techniques used. The barrier heights were 1.85eV(Al), 1.63eV(Ni), 0.97eV(Ti). The Ideality factors were 1.16(Al), 1.07(Ni), 1.05(Ti). Thermal stress tests were performed.

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Thermal Stability of Self-formed Barrier Stability Using Cu-V Thin Films

  • Han, Dong-Seok;Mun, Dae-Yong;Kim, Ung-Seon;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.188-188
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    • 2011
  • Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

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Energy Flow and Bond Dissociation of Vibrationally Excited Toluene in Collisions with N2 and O2

  • Ree, Jongbaik;Kim, Sung Hee;Lee, Sang Kwon
    • Bulletin of the Korean Chemical Society
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    • v.34 no.5
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    • pp.1494-1502
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    • 2013
  • Energy flow and C-$H_{methyl}$ and C-$H_{ring}$ bond dissociations in vibrationally excited toluene in the collision with $N_2$ and $O_2$ have been studied by use of classical trajectory procedures. The energy lost by the vibrationally excited toluene upon collision is not large and it increases slowly with increasing total vibrational energy content between 5,000 and 45,000 $cm^{-1}$. Intermolecular energy transfer occurs via both of V-T and V-V transfers. Both of V-T and V-V transfers increase as the total vibrational energy of toluene increases. When the total energy content $E_T$ of toluene is sufficiently high, either C-H bond can dissociate. The C-$H_{methyl}$ dissociation probability is higher than the C-$H_{ring}$ dissociation probability, and that in the collision with $N_2$ is larger than with $O_2$.

PACVD of Plasma Polymerized Organic Thin Films and Comparison of their Electrochemical Properties

  • I.S. Bae;S.H. Cho;Kim, M.C.;Y.H. Roh;J.H. Boo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.05a
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    • pp.53-53
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    • 2003
  • Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

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Functional Characterization of the C-Terminus of YhaV in the Escherichia coli PrlF-YhaV Toxin-Antitoxin System

  • Choi, Wonho;Yoon, Min-Ho;Park, Jung-Ho
    • Journal of Microbiology and Biotechnology
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    • v.28 no.6
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    • pp.987-996
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    • 2018
  • Bacterial programmed cell death is regulated by the toxin-antitoxin (TA) system. YhaV (toxin) and Pr1F (antitoxin) have been recently identified as a type II TA system in Escherichia coli. YhaV homologs have conserved active residues within the C-terminus, and to characterize the function of this region, we purified native YhaV protein (without denaturing) and constructed YhaV proteins of varying lengths. Here, we report a new low-temperature method of purifying native YhaV, which is notable given the existing challenges of purifying this highly toxic protein. The secondary structures and thermostability of the purified native protein were characterized and no significant structural destruction was observed, suggesting that the observed inhibition of cell growth in vivo was not the result of structural protein damage. However, it has been reported that excessive levels of protein expression may result in protein misfolding and changes in cell growth and mRNA stability. To exclude this possibility, we used an [$^{35}S$]-methionine prokaryotic cell-free protein synthesis system in vitro in the presence of purified YhaV, and two C-terminal truncated forms of this protein (YhaV-L and YhaV-S). Our results suggest that the YhaV C-terminal region is essential for mRNA interferase activity, and the W143 or H154 residues may play an analogous role to Y87 of RelE.

The Basic Study on 800kV GIS Development (800kV GIS 개발을 위한 기본연구)

  • Kim, J.B.;Yang, D.I.;Song, W.P.;Lee, C.H.;Noh, C.W.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1341-1343
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    • 1995
  • The maximum transmission voltage in our country is going to change 345kV into 765kV owing to the increase of Electrical Power Demand and power System Stability. Our company is developing 800kV GIS and 765kV Transformer which are main equipments in 765kV substation. This paper describs the specification on 800kV GIS which we prepared for 800kV 8,000A 50kA GIS development. This specification is supported by Public Standards and Data. And, we are designing the 800kV GIS on this specification and drawing up the 800kV GIS layout for type test.

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Clinical Analysis of 102 Cases of Open Heart Surgery (개심수술 102례 의 임상적 고찰)

  • 김형묵
    • Journal of Chest Surgery
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    • v.14 no.3
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    • pp.235-240
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    • 1981
  • A total of 102 patients who had an Open Heart Surgery from April 1976 to July 1981 were reviewed. 55 paeitnts were congenital heart disease and 47 patients were acquired heart disease. Among SS patients of congenital heart disease, 18 T 0 F, 18 V S D, 8 A S D, and each one case of l\ulcorner 0 R V, Truncus arteriosus, Ebstein anomaly, Single ventricle, P D A, P 5, A S D + P 5, E C D, V 5 D + P D A, A - P window, D C R V were noted respectively. In 47 patients of acquired heart disease and one Ebstein patient, 46 prosthetic values were implanted: 17 had M V R, 4 had A V R, 2 had M V R + A V R, and 4 had M V R + T V R and one T V R. The operative mortality was 8.S% in acquired heart disease and 17% in congenital heart disease. The follow up period was between 6 months and 6 years. There were 3 cases of late mortality in acquired heart disease and one case in congenital heart disease.

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Fabrication and Stability of V/YSZ Cermet Membrane for Hydrogen Separation (수소 분리를 위한 V/YSZ cermet 분리막의 제조 및 안정성)

  • Jeon, Sung-Il;Park, Jung-Hoon;Lee, Sang-Jin;Choi, Soo-Hyun
    • Membrane Journal
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    • v.20 no.1
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    • pp.62-68
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    • 2010
  • The powder mixture for fabricating the cermet membranes was prepared by mechanically mixing 60 vol.% vanadium with $Y_2O_3$-stabilized $ZrO_2$ (YSZ). The powder mixture was pressed into disks, which were then sintered in vacuum at $1600^{\circ}C$ for 2 h. As-sintered membrane was dense and mounted to a stainless steel ring with brazing filler. Hydrogen fluxes of V/YSZ membrane have been measured in the range of $200{\sim}350^{\circ}C$ with 100% $H_2$. The crack was formed in the both sides of membrane at $350^{\circ}C$ and pressure of 0.5 bar. During permeation experiment, vanadium of V/YSZ membrane reacted with hydrogen to form $V_2H$ which was the origin of crack formation.

Changes of Cerebral Metabolism and the Related Factors during Cardiac Surgery

  • Park, Seok-Cheol
    • Biomedical Science Letters
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    • v.8 no.3
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    • pp.143-154
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    • 2002
  • The effect of cardiopulmonary bypass (CPB) on cerebral physiology during heart surgery remains incompletely understood. This study was carried out to investigate changes of cerebral metabolism and the association between the changes and clinical factors during heart surgery. Seventy adult patients (n=70) scheduled for elective cardiac surgery were participated in the present study. Middle cerebral artery blood flow velocity (V$_{MCA}$), cerebral arteriovenous oxygen content difference (C(a-v)O$_2$), cerebral oxygen extraction (COE), and modified cerebral metabolic rate for oxygen (MCMRO$_2$) were measured during six phases of the operation; Pre-CPB, CPB-10 min, Rewarm-1 (nasopharyngeal temperature 34$^{\circ}C$), Rewarm-2 (nasopharyngeal temperature 37$^{\circ}C$), CPB-off, and Post-OP (at skin closure after CPB-off). Each relationship of age, arterial blood gas parameters, or other variables to V$_{MCA}2$, C(a-v)O$_2$, COE, or MCMRO$_2$ was evaluated. V$_{MCA}$ increased (P<0.0001) whereas C(a-v)O$_2$ decreased (P<0.01) throughout the five phases of the operation compared to Pre-CPB value (control). COE diminished at CPB-10, Rewarm-1, and CPB-off (P<0.05) while MCMRO$_2$ reduced at CPB-10 and Rewarm-1 (P<0.05) compared to Pre-CPB value. Positive correlation was found between age and cerebral metabolic parameters (V$_{MCA}$, C(a-v)O$_2$, COE, or MCMRO$_2$) during CPB (range r=0.24 to 0.38, p<0.05). Four cerebral metabolic parameters had partially negative or positive correlation with arterial blood gas parameters and other variables (arterial blood pH, $O_2$ tension, $O_2$ content, $CO_2$ tension, blood pressure, blood flow, temperature, or hematocrit) during the operation. In conclusion, CPB led to marked alterations of cerebral metabolism and age, pH, and $CO_2$ tension profoundly influenced the changes during cardiac surgery.

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