• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Bulletin of the Korean Chemical Society
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• v.26 no.8
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• pp.1185-1189
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• 2005

Two new copper vanadium borophosphate compounds, $(NH_4)(C_2H_{10}N_2)_{5.5}[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6{\cdot}17H_2O,\;Cu-VBPO1\;and\;(NH_4)(C_2H_{10}N_2)_{3.5}[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6{\cdot}18H_2O$, Cu-VBPO2 have been hydrothermally synthesized and characterized by single crystal X-ray diffraction, thermogravimetric analysis, IR spectroscopy, and elemental analysis. The structure of Cu-VBPO1 contains a layer anion, {$[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6$}$^{12-}$, whereas Cu-VBPO2 has an open framework anion, {$[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6$}$^{8-}$. Crystal Data: $(NH_4)(C_2H_{10}N_2)_{5.5}[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6{\cdot}17H_2O$, monoclinic, space group I2/m (no. 12), $\alpha$ = 15.809(1) $\AA$, b = 31.107(2) $\AA$, c = 12.9343(8) $\AA$, $\beta$ = 104.325(1)$^{\circ}$, Z = 2; $(NH_4)(C_2H_{10}N_2)_{3.5}[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6{\cdot}18H_2O$, tetragonal, space group $P4_2$/mnm (no.136), $\alpha$ = 26.832(1) $\AA$, c = 18.021(1) $\AA$, Z = 4.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.151-156
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• 2013

As the cathode material for li-ion battery, $LiNi_{0.5}Mn_{0.3}Co_{0.2}O_2$ were synthesized by supercritical hydrothermal method and calcined $850^{\circ}C$ and $900^{\circ}C$ for 10hrs in air. The effect of temperature in the heat treatment on the powder and its performance were studied of xray diffraction pattern, SEM-image, physical properties and electrochemical behaviors. As a result, calcined at $900^{\circ}C$ material particle size more increase than calcined at $850^{\circ}C$ material, especially shows excellent electrochemical performance with initial reversible specific capacity of 163.84 mAh/g (0.1C/2.0-4.3V), 186.87 mAh/g (0.1C/2.0-4.5V) and good capacity retention of 91.49% (0.2C/2.0-4.3V) and 90.36% (0.2C/2.0-4.5V) after 50th charge/discharge cycle.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.123-126
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• 2002

Samples of Nb/Al-Al$O_{x}$/Nb tunnel junction with the size of 50$\mu$m $\times$ 50$\mu$m were fabricated by employing self-aligning and reactive ion etching technique. In the samples with high-quality, $V_{m}$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density $J_{c}$ = 500 A/$cm^{2}$ and $V_{g}$ value (the gap voltage) was 2.8 mV. In the higher $J_{c}$, voltage fluctuation in the current rising at the gap voltage was observed. The $V_{m}$ and $J_{c}$ value were 8 mV and 900 A/$cm^{2}$, respectively.

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.138-140
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• 2007

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.395-398
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• 2018

we propose a design method and process for hardware and software of hybrid V2X communication systems that support both C-ITS communication protocol and Legacy LTE communication technology. The hybrid V2X communication systems support multiple communication technologies of WAVE and LTE, in which WAVE supports multiple channels, so that it is designed to transmit road information such as LDM and positioning correction information to an autonomous vehicle in real time.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.33-36
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• 2002

MESFET was fabricated using 4H-SiC substrates and epitaxy The DC characteristics of 0.5 urn gate length, 400 urn gate width MESFET had $I_{dss}$=200 ㎃/mm, maximum transconductance of 12 ㎳/mm at Vrs=-4 V, V, Is=27 V. Thc device had an fT of 2.5 GHz and $f_{mdx}$ of 13.3 GHz at $V_{ds}$ =27 V and $V_{g}$=-4 V. The fabrication and characterization of this device are discussed.d.d.d.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.19 no.2
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• pp.118-126
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• 1986

Vibrio vulnificus is a recently recognized halophilic organism that nay cause serious human infections. Patients infected with V. vulnificus often have a history of exposure to the sea, suggesting that the organism may be common inhabitant of marine environment. The purpose of this experiment is to investigate the distribution and bacteriological characteristics of V. vulnificus. The strain used in this experiment was isolated from sea water and sea products such as common octopus (Octopus variabilis), ark shell (Anadara broughtonii), blue crab (Ericheir japonica), and sea squirt (Synthia roretzi) collected in Pusan area from July to October in 1985. V. vulnificus was frequently isolated in August when temperature of sea water was around $26^{\circ}C$ and rarely isolated in October when temperature of sea water was around $18.5^{\circ}C$. The distinctive biochemical characteristics of V. vulnificus were ONPG hydrolysis positive and fermented lactose and not grown in peptone water contained $8\%$ NaCl. The optical density at 660 nm of the growth of V. vulnificus was reached maximum level after 8 hours of culture at $35^{\circ}C$ in brain heart infusion broth but that of V. vulnificus was little increased at $15^{\circ}C$ for 14 hours. Optimum temperature and pH for the growth of V. vulnificus were around $35^{\circ}C$ and 8.0. The specific growth rate and the generation time of V. vulnificus isolated from the samples were $1.21\;hr^{-1}$, 34 min at $35^{\circ}C$ and $0.61\;hr^{-1}$, 69 min at $25^{\circ}C$, respectively. V. vulnificus did not grow on eosin-methylene-blue agar, salmonella-shigella agar, deoxycholate agar but grew well on Endo agar, xylose-lysine-deoxycholate agar and hektoen enteric agar. On Endo agar, the colonies of V. vulnificus were red and achieved a diameter of 2 to 4 mm as a feature enabling differentiation of V. vulnificus from other Vibrio spp. V. vulnificus grow well on TCBS agar forming green colonies. V. vulnificus refrigerated at $4^{\circ}C$ exhibited a linear decline of its viablity as 1 log cycle in every 16 hours storage, while V. vulnificus freezed at $-18^{\circ}C$ almost became extinct.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.