• Korean Journal of Materials Research
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• v.17 no.9
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• pp.500-506
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• 2007

The effects of anisotropic surface energy on the microstructure development of porous materials have been studied through Monte Carlo simulation using a three dimensional lattice. The changes in porosity ($f_v$), mean grain diameter ($D_s$), fraction of connected pores ($f_{v,c}$) and contiguity of the solid phase (C) were examined in cases with three different ${\gamma}_{SV}$ relations and initial grain diameters ($D_{s,o}$). It has been found that larger ${\gamma}_{SV}$ enhances sintering of particles and increases C and does not change $D_s$. And Introducing anisotropic ${\gamma}_{SV}$ brought an increase in $f_v$ and $f_{v,c}$ and an decrease in $D_s$ and C, and this tendency become more marked for fine $D_{s,o}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• Kyungpook Mathematical Journal
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• v.17 no.1
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• pp.47-56
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• 1977

• Honam Mathematical Journal
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• v.9 no.1
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• pp.71-76
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• 1987

Let M be a positive real number and c a complex numbcr such that $\left|c-1\right|<M{\leq}Re{c}$. Let $f,f(z)=z+a_{2}Z^{2}+...,$ be analytic and univalent in the unit disc. It is said to belong to the class S(c, M) if $\left|zf'(z)/f(z)-c\right|<M$ We find growth and rotation theorems for the class S(c, M).

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.261-264
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• 2005

The elastic constants, C', of $Th_{3}P_4$-type structure compounds, $La_{3}S_4\;and\;Ce_{3}S_4$, have been analyzed on the basis of band Jahn-Teller mechanism. The distinct difference between two compounds lies in the fact that $Ce^{3+}$ ion has a f electron which produces magnetism. It is shown that the band Jahn-Teller effect is sensitively influenced by the energy splitting of f electronic bands by a cubic crystal field in $Ce_{3}S_4$, and f electrons suppress the elastic softening effect. The energy splitting value obtained from the calculation of elastic constants is found to agree well with the experimental value obtained from the magnetic susceptibility measurement.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.19-27
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• 1993

Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{\times}1.0 mm^{2}$ square size and a $10{\mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{\circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{\circ}C$ for temperature range of $5{\sim}45^{\circ}C$ were obtained.

• Journal of applied mathematics & informatics
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• v.14 no.1_2
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• pp.115-122
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• 2004

We characterize the additive operators preserving rank-additivity on symmetry matrix spaces. Let $S_{n}(F)$ be the space of all $n\;\times\;n$ symmetry matrices over a field F with 2, $3\;\in\;F^{*}$, then T is an additive injective operator preserving rank-additivity on $S_{n}(F)$ if and only if there exists an invertible matrix $U\;\in\;M_n(F)$ and an injective field homomorphism $\phi$ of F to itself such that $T(X)\;=\;cUX{\phi}U^{T},\;\forallX\;=\;(x_{ij)\;\in\;S_n(F)$ where $c\;\in;F^{*},\;X^{\phi}\;=\;(\phi(x_{ij}))$. As applications, we determine the additive operators preserving minus-order on $S_{n}(F)$ over the field F.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.403-408
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• 2001

In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.

• Bulletin of the Korean Mathematical Society
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• v.52 no.6
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• pp.2095-2105
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• 2015

Given c, a positive integer, we set. $$M(f,c):=\frac{2}{{\phi}(f)}\sum_{{\chi}{\in}X^-_f}{\chi}(c)|L(1,{\chi})|^2$$, where $X^-_f$ is the set of the $\phi$(f)/2 odd Dirichlet characters mod f > 2, with gcd(f, c) = 1. We point out several mistakes in recently published papers and we give explicit closed formulas for the f's such that their prime divisors are all equal to ${\pm}1$ modulo c. As a Corollary, we obtain closed formulas for M(f, c) for c $\in$ {1, 2, 3, 4, 5, 6, 8, 10}. We also discuss the case of twisted quadratic moments for primitive characters.