• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.176-178
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• 2002

Surface states of silicone polymer treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy(XPS) and surface voltage decay after corona charging. Plasma treatment causes the silica -like oxidative layer, which was confirmed with XPS, and lowers surface resistivity with increasing the plasma treatment time. Using the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by voltage-current method using three electrodes system. A good agreement between two methods was obtained. In addition, we estimated the thermal activation energy for surface conduction, Based on our results, we could understand the relationship between surface chemical states and surface electrical properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• Ocean and Polar Research
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• v.31 no.4
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• pp.283-296
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• 2009

Oceanographic survey data were analyzed to understand the characteristics of a warm eddy observed in the Ulleung Basin in July 2005. The temperature distribution at 200 db and vertical sections provided evidence of the warm eddy in the Ulleung Basin (UWE05). Based on the 5$^{\circ}C$ isothermal line on 200 db temperature, the major axis was 160 km from southwest to northeast, and the minor axis was 80 km from southeast to northwest. The homogeneous layer in the thermocline of UWE05 had mean values of 10.40$^{\circ}C$ potential temperature, 34.35 psu salinity, and 26.37 kg/m$^3$ potential density (${\sigma}_{\theta}$) and provided evidence that UWE05 also existed during the winter of 2004-2005. A warm streamer initially flowed along the circumference of UWE05 and mixed with the upper central water. Two northward current cores were found on the western side of the measured current section at the central latitude of UWE05. One was the East Korean Warm Current (EKWC) and the other was the main stream of the western part of UWE05. Geostrophic transport of the upper layer (from the surface to the isopycnal surface of 26.9 ${\sigma}_{\theta}$) was approximately 2.5 Sv in the eastern side of UWE05. However, the measured transport was twice as large as the geostrophic transport. Mass conservation of geostrophic transport was well satisfied in the upper layer. The direct current measurements and geostrophic transport analysis showed that the EKWC meandered around UWE05.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.475-480
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• 2001

Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

• Journal of the Korean Recycled Construction Resources Institute
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• v.7 no.3
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• pp.85-90
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• 2012

In this study, temperature profile of the fly ash concrete were studied in accordance with the change of heating curing method combination for the slab concrete in order to develop efficient protection method of the concrete subjected to $-20^{\circ}C$. The slab concretes with the size of $1200mm{\times}600mm{\times}200mm$ were fabricated with W/B of 50% and exposed to $-20^{\circ}C$ for 7 days. Five different combinations of heat curing methods were applied to the slab concrete specimen; two combinations of heat supplying by electrical heater and surface heat insulation material such as polyethylene film and quadrupled layer bubble sheet based on heat enclosure installment; three combinations of heating coil embedment and surface heat insulation materials such as polyethylene film, sawdust and quadrupled layer bubble sheet based on heat enclosure installment. Test results showed that by applying both heating coil and bubble sheet and heat enclosure, the concrete exposed to $-20^{\circ}C$ can be effectively protected from early-age frost damage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.592-597
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• 2004

Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1867-1872
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• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.128-128
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• 2013

Fabrication of heterogeneous catalysts using Atomic Layer Deposition (ALD) has recently been attracting attention of surface chemists and physicists. In this talk, I will present recent results about structures and chemical activities of various catalysts prepared by ALD, particularly focusing on Ni-based catalysts. Ni has been considered as potential catalysts for $CO_2$ reforming of methane (CRM); however, Ni often undergoes rapid decrease in catalytic activity with time, and therefore, application of Ni as catalysts for CRM has been regarded as difficult so far. Deactivation of Ni catalysts during CRM reaction is from either coke formation on Ni surface or sintering of Ni particles during reaction. Two different strategies have been used for enhancing stability of Ni-based catalysts; $TiO_2$ nanoparticles were deposited on micrometer-size Ni particles by ALD, which turned out to reduce coke formation on Ni surfaces. Ni nanoparticles deposited by ALD on mesoporous silica showed high activity and long-term stability from CRM without coke deposition and sintering during CRM reaction. Ni-based catalysts have been also used for oxidation of toluene, which is one of the most notorious gases responsible for sick-building syndrome. It was shown that onset-temperature of Ni catalysts for toluene oxidation is as low as $120^{\circ}C$. At $250\circ}C$, total oxidation of toluene to $CO_2$ with a 100% conversion was found.

• Smart Structures and Systems
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• v.4 no.1
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• pp.35-46
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• 2008

In this paper the authors address the problem of comparing two different smart damping techniques using the numerical modelling of the electro-mechanical impedance for plate structures partially treated with active constrained layer damping treatments. The paper summarizes the modelling procedures including a finite element formulation capable of accounting for the observed behaviour. The example used is a smart cantilever plate structure containing a viscoelastic material (VEM) layer sandwiched between a piezoelectric constrained layer and the host vibrating plate. Comparisons are made between active constrained layer and active damping only and based on the resonance frequency amplitudes of the electrical admittance numerically evaluated at the surface of the piezoelectric model of the vibrating structure.