• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.6
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• pp.286-292
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• 2005

Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.215-216
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• 2008

In this paper, we describe a UHF-band CMOS fractional-N frequency synthesizer using a ring - type VCO. It has been designed using $0.18{\m}m$ CMOS technology. First, The newly designed charge-pump circuit includes an OTA for matching between the upper current and the lower current In addition, a ring - type VCO is also used for small chip sire. The simulation results show that the designed circuit has a phase noise of -109.53dBc/Hz at 1MHz offset and consumes 19.4mA from a 1.8V supply. The lock time is less than 30usec and the chip size is $0.45mm{\times}0.5mm$.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.456-462
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• 2016

$NaCaGd(MoO_4)_3:Ho^{3+}/Yb^{3+}$ ternary molybdates were successfully synthesized by microwave sol-gel method for the first time. Well-crystallized particles formed after heat-treatment at $900^{\circ}C$ for 16 h showed a fine and homogeneous morphology with particle sizes of $3-5{\mu}m$. Under excitation at 980 nm, the UC intensities of the doped samples exhibited strong yellow emissions based on the combination of strong emission bands at the 520-nm and 630-nm emission bands in the green and red spectral regions, respectively. The strong 520-nm emission band in the green region corresponds to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition of $Ho^{3+}$ ions, while the strong 630-nm emission band in the red region appears to be due to the $^5F_5{\rightarrow}^5I_8$ transition of the $Ho^{3+}$ ions. The optimal $Yb^{3+}:Ho^{3+}$ ratio was found at 9:1, as indicated by the composition-dependent quenching effect of $Ho^{3+}$ ions. The pump power dependence of the upconversion emission intensity and the Commission Internationale de L'Eclairage chromaticity coordinates of the phosphors were evaluated in detail.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.514-520
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• 2015

$KY_{1-x}(WO_4)_2:Ho^{3+}/Yb^{3+}$ yellow phosphors with doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0.05$, 0.1, 0.2 and $Yb^{3+}=0.2$, 0.45) were successfully prepared using the microwave-modified sol-gel method; their upconversion (UC) photoluminescence properties were investigated in detail. Well-crystallized particles, formed after heat-treatment at $900^{\circ}C$ for 16 h, showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, the UC $KY_{0.7}(WO_4)_2:Ho_{0.1}Yb_{0.2}$ and $KY_{0.5}(WO_4)_2Ho_{0.05}Yb_{0.45}$ particles exhibited excellent yellow emissions based on a strong 545-nm emission band in the green region and a very strong 655-nm emission band in the red region. Pump power dependence and Commission Internationale de L'Eclairage chromaticity of the UC emission intensity were evaluated. The spectroscopic properties were examined comparatively using Raman spectroscopy.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.364-369
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• 2017

Double molybdate $NaGd_{1-x}(MoO_4)_2:Ho^{3+}/Yb^{3+}$ phosphors with proper doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0$ and 0.05, and $Yb^{3+}=0$, 0.35, 0.40, 0.45, and 0.50) were successfully synthesized using the microwave sol-gel method. Well-crystallized particles formed after heat-treatment at $800^{\circ}C$ for 16 h showed fine and homogeneous morphologies with particle sizes of $1{\sim}3{\mu}m$. The spectroscopic properties were examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the upconversion doped samples exhibited strong yellow emissions, from the combination of strong emission bands at 545 nm and 655 nm in the green and red spectral regions, respectively. The strong 545 nm emission band in the green region corresponded to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition in the $Ho^{3+}$ ions, while the strong 655 nm band in the red region appeared because of the $^5F_5{\rightarrow}^5I_8$ transition in the $Ho^{3+}$ ions. The pump power dependence and the Commission Internationale de L'Eclairage chromaticity of the upconversion emission intensity were evaluated in detail.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.29-34
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• 2016

$NaLa_{1-x}{(MoO_4)}_2$:$Ho^{3+}/Yb^{3+}$ phosphors with the correct doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0.05$ and $Yb^{3+}=0.35$, 0.40, 0.45 and 0.50) were successfully synthesized by the microwave-modified sol-gel method. Well-crystallized particles formed after heat-treatment at $900^{\circ}C$ for 16 h showed a fine and homogeneous morphology with particle sizes of $3-5{\mu}m$. The optical properties were examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the UC intensities of the doped samples exhibited strong yellow emissions based on the combination of strong emission bands at 545-nm and 655-nm emission bands in green and red spectral regions, respectively. The strong 545-nm emission band in the green region corresponds to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions, while the strong emission 655-nm band in the red region appears due to the $^5F_5{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions. Pump power dependence and Commission Internationale de L'Eclairage chromaticity of the upconversion emission intensity were evaluated in detail.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.587-596
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• 2014

A new ${\pi}$-stacked donor-acceptor (D-A) system, [Ru(1-([2,2'-bipyridine]-6-yl-methyl)-3-(2-cyclohexa-2',5'-diene-1,4-dionyl)-1H-imidazole)(2,2':6',2"-terpyridine)]$[PF_6]_2$ (ImQ_T), has been synthesized and characterized. Similar to its precedent, [Ru(6-(2-cyclohexa-2',5'-diene-1,4-dione)-2,2':6',2"-terpyridine)(2,2':6',2"-terpyridine)]$[PF_6]_2$ (TQ_T), this system has a cofacial alignment of terpyridine (tpy) ligand and quinonyl (Q) group, which facilitates an electron transfer through ${\pi}$-stacked manifold. Despite the presence of lowest-energy charge transfer transition from the Ru-based-HOMO-to-Q-based-LUMO (MQCT) predicted by theoretical calculations by using time-dependent density functional theory (TD-DFT), the experimental steady-state absorption spectrum does not exhibit such a band. The selective excitation to the Ru-based occupied orbitals-to-tpy-based virtual orbital MLCT state was thus possible, from which charge separation (CS) reaction occurred. The photo-induced CS and thermal charge recombination (CR) reactions were probed by using ultrafast visible-pump/mid-IR-probe (TrIR) spectroscopic method. Analysis of decay kinetics of Q and $Q^-$ state CO stretching modes as well as aromatic C=C stretching mode of tpy ligand gave time constants of <1 ps for CS, 1-3 ps for CR, and 10-20 ps for vibrational cooling processes. The electron transfer pathway was revealed to be Ru-tpy-Q rather than Ru-bpy-imidazol-Q.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.135-139
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• 2016

I propose a vector passive harmonic mode-locked fiber laser based on topological insulator Bi2Se3 interacting with a fiber taper with a diameter of 7 μm. The particles of topological insulator are deposited uniformly onto the fiber taper with light pressure effect. By incorporating the fabricated saturable absorber into an Er-doped fiber laser cavity, stable mode-locked fiber is obtained. Due to the intense evanescent field of the fiber taper, strong confinement of light enhances the nonlinearity of the laser cavity, and passive harmonic mode-locking is performed. I observe a maximum harmonic mode-locking of 356th, corresponding to a frequency of 3.57 GHz. The pulse duration is 824 fs, and the full width at half maximum of the spectrum is about 8.2 nm. The polarization dependent loss of the saturable absorber is ~ 2.5 dB in the wavelength range of the C band. As the cavity contains no other polarization dependent device, the mode-locked laser is functioning in the vector state. The harmonic order vs pump power is investigated. To the best of our knowledge, this report is the highest frequency mode-locked fiber laser based on Bi2Se3. Experimental results indicate that the topological insulator Bi2Se3 functioning with a thin fiber taper is effective for vector harmonic mode-locking.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.