• 센서학회지
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• 제15권3호
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• 한국자기학회지
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• 제1권2호
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• pp.69-73
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• 1991

단롤법 급속응고기술을 이용하여 제작한 ${(Nd_{0.8}Dy_{0.2})}_{12}Fe_{80}B_8$ 리본의 미세조직 및 자기특성에 미치는 디스크표면속도의 영향을 조사하였다. X-선 회절패턴으로 부터 $I_{410}/I_{006}$의 비를 계산한 결과, 리본의 이방화는 디스크표면속도($V_{s}$)가 느릴수록 우수하였다. 그러나, 리본을 분쇄하여 자장중에서 정렬시킨 분말의 잔류자속밀도는 디스크표면속도가 빨라짐에 따라 증가하여, $V_{s}=14.6m/s$에서 최대치를 나타낸후, 그 이상의 속도에서는 감소하였다. $V_{s}=14.6m/s$로 제작한 리본을 분쇄하여 자장중에서 정렬시킨 분말의 잔류자속밀도는 자장중에서 정렬시키지 않은 경우에 비해 약 10%높았으며, 이는 리본의 일부가 이방화되어 있기 때문인 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.354-354
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• 2012

In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

• 한국자기학회지
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• 제2권1호
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• pp.44-49
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• 1992

단롤법 급속응고기술을 이용하여 $Nd_{12}Fe_{80}B_{6}(Nb,\;M)$ (M=Ti/Cu/Ga) 리본을 제작하고 이의 자기특성 및 미세조작에 관한 연구를 하였다. X-선 회절 및 TEM을 이용한 미세조직 조사 결과, 리본의 이방화에 Ga이 효과적이며, 디스크표면속도 17.9 m/s로 제작한 $Nd_{12}Fe_{80}B_{6}(Nb,\;Ca)$ 리본은 약 30 nm의 미세한 결정립으로 구성되고 자유표면이 이방화된 조직으로 형성됨을 알았다. 이 리본을 분쇄하여 자장중에서 정렬시킨 분말의 잔류자속밀도는 0.87 T의 높은 값을 보였으며, 분쇄하기전 리본의 잔류자속밀도에 비하여 약 5% 정도 높았다. 이상의 결과로 부터 리본의 자유표면은 이방화가 되고 나머지 부분은 HIREM 특성을 나타내는 새로운 형태의 고특성 급속응고리본의 제조가 가능할 것으로 사료된다.

• 한국재료학회지
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• 제20권1호
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• 한국재료학회지
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• 제29권7호
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 센서학회지
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• 제9권2호
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• pp.146-152
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• 2000

고주파 마그네트론 스퍼터링법으로 Li이 도핑된 ZnO(ZnO:Li) 박막을 코닝 7059 글라스 기판상에 증착하였다. 도핑량은 스퍼터링용 ZnO타겟내의 $Li_2CO_3$의 첨가량을 달리하여 조절하였다. 타겟내의 $Li_2CO_3$의 첨가량에 따른 구조적 특성을 XRD, AFM 및 SEM으로 조사하였으며 기판온도, 고주파출력 및 $O_2/Ar$ 가스비에 따른 Li이 도핑된 ZnO박막의 전기적 특성을 조사하였다. 타겟내의 $Li_2CO_3$의 첨가량과 증착조건이 막의 구조적 및 전기적 특성에 미치는 영향을 조사하였다. $Li_2CO_3$의 첨가량이 1wt%이하인 타겟으로 기판온도 $200^{\circ}C$, $O_2$/Ar 가스비 100%, 고주파 출력 100W에서 스퍼터된 ZnO:Li 박막이 표면거칠기가 낮은 우수한 표면형상, 강한 c-축 우선배향성 및 $10^8{\Omega}cm$ 이상의 큰 비저항을 보였다.

• 대한전자공학회논문지SD
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• 제46권2호
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• pp.9-14
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• 2009

본 연구에서는 sapphire 기판위에 P (phosphorus) 도핑된 ZnO 박막을 제작한 후, 산소 분위기에서 후열 처리 온도가 박막의 전기적 및 광학적 특성에 미치는 영향에 대해서 조사하였다. XRD 측정 결과, 후열 처리 온도에 무관하게 모든 박막이 c축 배향성을 나타내었다. Hall 측정 결과, $850^{\circ}C$에서 후열 처리한 박막에서만 p형 전도 특성이 관찰되었다. 이때의 홀 캐리어 농도와 홀 이동도는 각각 $1.18{\times}1016cm^{-3}$과 $0.96cm^2/Vs$의 값을 나타내었다. 저온 PL 측정 결과, $850^{\circ}C$에서 후열 처리한 박막의 경우 p형 특성을 나타내는 상당량의 억셉터가 관련된 A0X (3.351eV), FA(3.283eV) 및 DAP (3.201eV) 피크가 관찰되었다. 향후 P 도핑된 ZnO 박막의 공정 조건과 후열 처리 조건을 최적화시킨다면, 차세대 광소자에 응용될 수 있는 매우 유망한 재료로 주목받을 것으로 기대된다.

• 한국결정성장학회지
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• 제24권6호
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• pp.237-241
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• 2014

본 연구에서는 상용화되는 AlN 웨이퍼(wafer)를 이용하여 molten KOH/NaOH 화학적 습식 에칭(Wet Chemical Etching)에 따른 표면변화 특성 및 최적의 에칭 조건을 조사하였다. AlN 웨이퍼를 $350^{\circ}C$에서 5분간 에칭 시 Al-face, N-face는 서로 다른 관찰되었다. 특히, Al-face는 에치핏의 형상을 파악하여 결함특성을 관찰하였고, 이로부터 결함 밀도를 계산하여 $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$의 결과를 얻었다. N-face의 경우 육각 뿔(hexagonal pyramids) 형태의 격자결함이 형성되었다. 또한 AlN 웨이퍼의 성장 시 배향을 관찰하기 위해 XRD(X-Ray Diffraction, Rigaku, JAPAN)를 이용하여 분석한 결과 육방정 AlN의 C축 방향에 해당되는 (0002) 및 (0004) 면으로 배향된 상태임을 알 수 있었고, DC-XRD(Double Crystal X-ray Diffraction, bruker, Germany)를 이용하여 rocking curve의 위치에 따라 곡률 반경을 측정했을 때 1.6~17 m의 곡률을 가지고 있는 것으로 나타났다.