• Title/Summary/Keyword: C-axis growth

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Growth And Characterization of $LiNbO_3$ Single Crystals ($LiNbO_3$단결정성장 및 특성 연구)

  • 손진영;노광수;이진형
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.2 no.1
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    • pp.43-50
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    • 1992
  • $ LiNbO_3$ single crystals were grown using the Czochralski Method at various pulling speeds. Macroscopic defects such as cracks, bubbles and cellular structures were observed in some crystals. Cracks and bubbles observed in the crystals depended on the pulling speed and cooling rate. $ LiNbO_3$ crystals of about 15mm diameter could be grown properly at 6-7mm/h pulling speed and $ 20^{circ}C/h$ cooling rate. In order to investigate dielectric properties and optical properties for device application, these properties were measured for the sample cut along a axis and c axis at different temperatures.

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Preparation of $YBa_2Cu_3O_{7-y}$ Superconducting Thin Films by on-axis Sputtering (on-axis 스퍼터링 방법에 의한 $YBa_2Cu_3O_{7-y}$ 초전도 박막 제조)

  • 한재원;박정래;최무용
    • Journal of the Korean Vacuum Society
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    • v.4 no.2
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    • pp.172-176
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    • 1995
  • $YBa_2Cu_3O_{7-y}$ thin films have been prepared on MgO(100)substrates placed on-axis to the target by dc magnetron sputtering in a variety of oxygen/argon gas pressures with different substrate-target distances. We found that films with the c-axis perpendicular to the substrate deposited in an optimally high gas pressure with on-axis substrate-target configuration do. Increasing the substrate-target distance was found to be effetive in reducing the resputtering effect and enhancing superconductivity of films, but not so much $\alpha$-and c-axis growth of YMCO films on MgO substrates. Dependences of the Tc, the rationj of resistances at 300K and 100K, and the X-ray diffraction pattern on the gas pressure and the substrate target distance are described.

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Crystal growth and optical properties with preheating temperature of sol-gel derived ZnO thin films

  • Kim, Young-Sung;Lee, Choong-Sun;Kim, Ik-Joo;Ko, Hyung-Duk;Tai, Weon-Pil;Song, Yong-Jin;Suh, Su-Jeung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.5
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    • pp.187-192
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    • 2004
  • We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.

Magnetoresistive and Pinning Direction Behaviors of Synthetic Spin Valves with Different Pinning Layer Thickness

  • Cho, Ho-Gun;Kim, Young-Keun;Lee, Seong-Rae
    • Journal of Magnetics
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    • v.7 no.4
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    • pp.147-150
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    • 2002
  • The pinning direction, the spin flop behaviors and the magnetoresistive properties in top synthetic spin valve structure [NiFe/CoFe/Cu/CoFe (t$_{p2}$)/Ru/CoFe (t$_{p1}$)/IrMn] were investigated. The magnetoresistive and pinning characteristics of synthetic spin valves strongly depended on the differences in the two pinning layer thickness, ${\Delta}t(=t_{p2}-t_{p1})$. In contrast to the conventional spin valves, the pinning direction (P1) was canted off with respect to the growth field axis with ${\Delta}t$. We found that the canting angle ${\Phi}$ had different values according to the annealing field direction and ${\Delta}t$. When the samples were annealed at above the blocking temperature of IrMn with zero fields, the canted pinned layer could be set along the growth field axis. Because the easy axis which was induced by the growth field during deposition is still active in all ferromagnetic layers except the IrMn at $250{^{\circ}C}$, the pinning direction could be aligned along the growth field axis, even in 0 field annealing.

Phase Stability of Laser-ablated $SmBa_2Cu_3O_{7-y}$ thin Films Investigated by Raman Scattering Spectroscopy

  • Kim, G.;Jeong, A.R.;Jo, W.;Park, D.Y.;Cheong, H.;Tsukada, A.;Hammond, R.H.;Beasley, M.R.
    • Progress in Superconductivity
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    • v.11 no.2
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    • pp.141-146
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    • 2010
  • Phase stability diagram and boundary of a- and c-axis orientation of $SmBa_2Cu_3O_{7-y}$ (SmBCO) thin films grown by pulsed laser deposition (PLD) were reported with studies based on x-ray diffraction [1]. Four different samples are systematically analyzed: normal c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$, a-axis oriented $SmBa_2Cu_3O_{7-y}$, c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ with $Sm_2BaCuO_5$ phase, and a mixture with c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ and anomalously long-c tetragonal $SmBa_2Cu_3O_x$. Raman scattering spectroscopy equipped with polarization analysis elucidates the crystal orientation and the origin of the growth of the materials. It indicates that the technique can be used for quality control of conductor manufacturing processes as well as for enhancement of the materials properties.

ZnO Film Deposition on Aluminum Bottom Electrode for FBAR Filter Applications and Effects of Deposition Temperature on ZnO Crystal Growth (FBAR 필터 응용을 위한 Al 하부전극 상에서 ZnO 박막 증착 및 온도가 ZnO 결정의 성장에 미치는 영향)

  • ;;;Mai Linh
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.2
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    • pp.255-262
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    • 2003
  • In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.

Growth of Sapphire Crystals by Verneuil Method (Verneuil법에 의한 Sapphire단결정 성장)

  • Joo, K.;Bae, S.Y.;Choi, J.K.;Orr, K.K.;Son, S.K.;Beun, Y.J.;Chun, H.T.
    • Journal of the Korean Ceramic Society
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    • v.25 no.5
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    • pp.495-501
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    • 1988
  • Verneuil method uses oxyhydrogen flame for its heat source. This method was used to grow corundum monocrystals. Parametersof this method are feeding rate, gas pressure, lowering rate and growth axis. These parameters were examined. Crystals's qualities and shapes are affected by these parameters. Crystals having good qualities and shape were grown under the conditions that feeding rate, 0.2∼0.5g/min, lowering rate, 10∼20mm/hr ; gas pressure, 3∼4psi ; growth axis was shifted 60 degrees from c axis.

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Crystal Growth of Superconducting $YBa_2Cu_3O_{7-x}$ Single Crystals ($YBa_2Cu_3O_{7-x}$초전도 단결정 성장)

  • 정광철;오근호;최종건
    • Journal of the Korean Ceramic Society
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    • v.27 no.4
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    • pp.536-542
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    • 1990
  • Single crystals of YBa2Cu3O7-x have been grown in BaCuO2 flux at temperature of 125$0^{\circ}C$ and examined using XRD, EDAX and light microscopy. The YBCO crystals were grown in a cavity which was formed by the reduction of CuO and became large by the directional solidification in the crucible. The observed crystal growth habit is square planar with the c-axis normal to the plane. The surface morphology of grown crystals were growth ledges and growth sprial paterns on a (001) face.

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Studies on the growth of organic single crystals of urea and THAMP (Urea와 THAMP 유기 단결정의 육성에 관한 연구)

  • 임창성;황완인;김판채
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.3
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    • pp.223-232
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    • 1995
  • Abstract Urea($(NH_2)_2CO$) and THAMP (Tris(hydroxymethyl) aminomethane phosphate) are new organic nonlinear optical materials (NLO) for the device application such as the frequency conversion of laser radiation. The single crystals of urea and THAMP have been grown by the falling temperature method and the temperature difference method. The crystal growth parameters were presented associated with the molphology of the grown crystals. Based on the solubility measurements, methanol was a suitable solvent for the growth of urea. The solubilities of urea have a positive temperature coefficient and the heat of solution of urea was estimated to be -2.58 kcal/mol. The grown crystals of urea have the preferential growth habit in the z-axis. Additives such as $NH_4_H_2PO_4$, KCL, $H_3PO_4$, $CaCl_2{\cdot}2H_2O$, $C_2H_5OH$ were used for the favourable growth in the x - and y-axis and the preventive growth in the z-axis. The moleratio of THAM and H3P04 for the solution of THAMP was 1 : 1. The solubilities of THAMP have a positive temperature coefficient. The heat of solution was estimated to be - 1.70 kcal/ mol.

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