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Phase Stability of Laser-ablated $SmBa_2Cu_3O_{7-y}$ thin Films Investigated by Raman Scattering Spectroscopy  

Kim, G. (Department of Physics, Ewha Womans University)
Jeong, A.R. (Department of Physics, Ewha Womans University)
Jo, W. (Department of Physics, Ewha Womans University)
Park, D.Y. (Department of Physics, Sogang University)
Cheong, H. (Department of Physics, Sogang University)
Tsukada, A. (Geballe Laboratory for Advanced Materials, Stanford University)
Hammond, R.H. (Geballe Laboratory for Advanced Materials, Stanford University)
Beasley, M.R. (Geballe Laboratory for Advanced Materials, Stanford University)
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Abstract
Phase stability diagram and boundary of a- and c-axis orientation of $SmBa_2Cu_3O_{7-y}$ (SmBCO) thin films grown by pulsed laser deposition (PLD) were reported with studies based on x-ray diffraction [1]. Four different samples are systematically analyzed: normal c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$, a-axis oriented $SmBa_2Cu_3O_{7-y}$, c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ with $Sm_2BaCuO_5$ phase, and a mixture with c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ and anomalously long-c tetragonal $SmBa_2Cu_3O_x$. Raman scattering spectroscopy equipped with polarization analysis elucidates the crystal orientation and the origin of the growth of the materials. It indicates that the technique can be used for quality control of conductor manufacturing processes as well as for enhancement of the materials properties.
Keywords
SmBCO thin films; Raman scattering spectroscopy; and phase stability;
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