• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.78-80
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• 2001

DC accelerating aging characteristics of praseodymium-based ZnO varistors doped with $Dy_2O_3$ were investigated with sintering time. The varistor sintered for 1h exhibited the highest nonlinearity, with a nonlinear exponent of 66.61 and a leakage current of $1.16{\mu}A$, whereas they did not exhibit relatively high stability. The varistor sintered for 2h having nonlinear exponent of 54.81 and leakage current of $2.52{\mu}A$ showed very excellent stability, which the variation rates of varistor voltage, nonlinear exponent, and leakage current are -1.19%, -4.00%, and +75.79% for 2h, under DC accelerated aging stress, such as ($0.85\;V_{1mA}/115^{\circ}C$/24h)+($0.90\;V_{1mA}/120^{\circ}C$/24h)+($0.95\;V_{1mA}/125^{\circ}C$/24h)+($0.95\;V_{1mA}/150^{\circ}C$/24h).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.467-471
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• 2001

DC accelerated aging characteristics of $Pr_{6}O_{11}$-based ZnO varistors, which are composed of $ZnO+Pr_{6}O_{11}+CoO+Cr_{2}O_{3}+Dy_{2}O_{3}$ ceramics were investigated with CoO content in the range of 0.5 - 5.0 mol%. The varistors doped with 1.0 mol% revealing maximum value(66.61) in the nonlinear exponent exhibited excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent and leakage current are -1.93%, -10.48%, and +288.79%, respectively, under DC accelerated aging stress, such as $(0.85V_{lmA}/115^{\circ}C/24h)+(0.90V_{lmA}120^{\circ}C/24h)+(0.95V_{lmA}/125^{\circ}C/24h)+(0.95V_{lmA}/150^{\circ}C/24h)$. Next the varistors doped with 2.0 mol% exhibiting the nonlinear exponent of 47.39 showed high stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.467-471
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• 2001

DC accelerated aging characteristics of Pr$_{6}$O$_{11}$-based ZnO varistors, which are composed of ZnO+Pr$_{6}$O$_{11}$+CoO+Cr$_2$O$_3$+Dy$_2$O$_3$ ceramics were investigated with CoO content in the range of 0.5~5.0 mol%. The varistors doped with 1.0 mol% revealing maximum value(66.61) in the nonlinear exponent exhibited excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent and leakage current are -1.93%, -10.48%, and 288.79%, respectively, under DC accelerated aging stress, such as (0.85 V$_{1mA}$/115$^{\circ}C$/24h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/24h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/24h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/24h). Next the varistors doped with 2.0 mol% exhibiting the nonlinear exponent of 47.39 showed high stability,ity,ability,ity,

• 전기전자학회논문지
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• 제28권2호
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• pp.131-135
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• 2024

본 연구에서는 전력설비의 전력선에 탈부착이 용이하도록 전류계(CT) 방식의 비접촉식 부분방전 측정용 센서를 자체 개발하고, 그 특성평가 결과에 대하여 논하였다. 자체 제작한 HFCT센서의 주파수 응답특성이 20[kHz]에서 20[MHz]까지 측정 가능함을 보였으며, 정극성 방향으로 배치한 경우의 평균감도가 0.308[mV/pC], 부극성 방향으로 배치한 경우는 0.459[mV/pC]로서 부극성으로 배치한 경우가 정극성으로 배치한 경우보다 감도특성이 우수함을 보였다. 실제 부분방전 발생 및 특성측정 실험을 통하여 침전극 끝단에서 매우 미소한 코로나 기중방전이 시작되는 펄스 신호를 측정하는 것이 가능하므로 전력설비에서 발생될 수 있는 다양한 형태의 부분방전을 충분히 측정가능할 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.30-33
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• 1999

본 연구에서는 Pt/f4-SiC Schottky barrier diodes(SBDs)의 소자 성능향상과 미세구조와의 상관관계를 규명하였다. 다른 열처리 온도구간에 따른 금속/SiC 계면의 미세구조 평가는 X-ray scattering법을 사용하여 분석하였다. 소자의 역 방향 특성은 열처리 온도가 증가함에 따라 저하되었다. As-deposited와 $850^{\circ}C$ 온도에서 열처리된 소자의 최대 항복전압은 각각 1300 V와 626 V 이었다. 그러나, 소자의 순방향 특성은 열처리 온도가 증가함에 따라 향상되었다. X-ray scattering법으로 >$650^{\circ}C$ 이상의 열처리 온도에서는 Pt/SiC 계면에서 Pt-silicides가 형성되었고, 이러한 Silicides의 형성이 Pt/SiC 계면의 평활도를 증가시킨 원인이 됨을 보였다. SBDs의 순방향 특성은 열처리 과정동안 Pt/SiC 계면에서 형성된 silicides의 결정성에 강하게 의존함을 알 수 있었다.

• 전기전자학회논문지
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• 제18권4호
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• pp.620-624
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• 2014

본 연구에서는, Ni/CNT/$SiO_2$ 구조의 4H-SiC MIS 캐패시터를 제작하고 전기적 특성을 조사하였다. 이를 통하여 4H-SiC MIS 소자에서 탄소나노튜브의 역할을 분석하고자 하였다. 탄소나노튜브는 이소프로필알코올과 혼합하여 $SiO_2$ 표면에 분산하였다. 소자의 전기적 특성 분석을 위하여 300-500K의 온도 범위에서 소자의 정전용량-전압 특성을 측정하였다. 밴드 평탄화 전압은 양의 방향으로 shift되었다. 정전용량-전압 그래프로부터 계면 포획 전하 밀도 및 산화막 포획 전하 밀도가 유도되었다. 산화막의 상태는 4H-SiC MIS 구조의 계면에서 전하 반송자 또는 결함 상태와 관련된다. 온도가 증가함에 따라 밴드 평탄화 전압은 음의 방향으로 shift되는 결과를 얻었다. 실험 결과로부터, Ni과 $SiO_2$ 계면에 탄소나노튜브를 첨가함에 따라 4H-SiC MIS 캐패시터의 게이트 특성을 조절 가능할 것으로 판단된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1193-1196
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• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of Advanced Marine Engineering and Technology
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• 제40권10호
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• pp.899-905
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• 2016

Wireless access in vehicle environment (WAVE) communication is currently being researched as core wireless communication technologies for cooperative intelligent transport systems (C-ITS). WAVE consists of both vehicle to vehicle (V2V) communication, which refers to communication between vehicles, and vehicle to infrastructure (V2I) communication, which refers to the communication between vehicles and road-side stations. V2I has a longer communication range than V2V, and its communication range and reception rate are heavily influenced by various factors such as structures on the road, the density of vehicles, and topography. Therefore, domestic environments in which there are many non-lines of sight (NLOS), such as mountains and urban areas, require optimized communication channel modeling based on research of V2I propagation characteristics. In the present study, the received signal strength indicator (RSSI) was measured on both an experience road and a test road, and the large-scale characteristics of the WAVE communication were analyzed using the data collected to assess the propagation environment of the WAVE-based V2I that is actually implemented on highways. Based on the results of this analysis, this paper proposes a WAVE communication channel model for domestic public roads by deriving the parameters of a dual-slope logarithmic distance implementing a two-ray ground-reflection model.