• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.264-269
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• 2004

This paper describes on an advanced technology of 3C-SiC/Si(100) wafer direct bonding using PECVD oxide to intermediate layer for SiCOI(SiC-on-Insulator) structure because it has an attractive characteristics such as a lower thermal stress, deposition temperature, more quick deposition rate and higher bonding strength than common used poly-Si and thermal oxide. The PECVD oxide was characterized by ATR-FTIR. The bonding strength with variation of HF pre treatment condition was measured by tensile strength measurement system. After etch-back using TMAH solution, roughness of 3CSiC surface crystallinity and bonded interface was measured and analyzed by AFM, XRD, and SEM respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.296-300
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• 2002

Thin films of Hydrogenated amorphous carbon(a-C:H) are generally exhibited by high electrical resistivities from 10$^2$ to 10$\^$16/ Ω$.$cm, resulting in an interesting material for high power, high temperature MIS devices applications. The hydrogenated amorphous carbon(a-C:H) films were deposited on silicon and glass using an rf plasma enhanced CVD method. The resultant film properties were evaluated in the respect of material based on r.f. power variation. The hydrogenated amorphous carbon(a-C:H) films of thickness ranging from 30 to 50 m were deposited at the pressure of 1 ton with the mixture of methane and hydrogen. We have used rf-IR( courier transform IR) and AFM(Atomic force microscopy) for determining physical properties and current-voltage(I-V) measurement for electrical Properties.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Macromolecular Research
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• v.17 no.11
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• pp.886-893
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• 2009

Surface modifications using a radio frequency Ar-plasma treatment were performed on a polypropylene (PP) blend used for automotive bumper fascia. The surface characterization and morphology were examined. With increasing aging time, there was an increase in wettability, oxygen containing polar functional groups (i.e., C-O, C=O and O-C=O) due to oxidation, the amount of tale, and bearing depth and roughness on the PP surface, while there was a decrease in the number of hydrocarbon groups (i.e., C-C and C-H). AFM indicated that the Ar-plasma-treatment on a PP blend surface transforms the wholly annular surface into a locally dimpled surface, leading to an improvement in wettability. SEM showed that the PP layer observed in the non-plasma-treated sample was removed after the Ar-plasma treatment and the rubber particles were exposed to the surface. The observed surface characterization and morphologies are responsible for the improved wettability and interfacial adhesion between the PP blend substrate and bumper coating layers.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1211-1215
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• 1999

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.473-474
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• 2006

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of B2H6 with PH3 using APCVD. N2 was carried out as carrier gas. The optimal gas rates were $20\;m{\ell}/min$ for B2H6, $60\;m{\ell}/min$ for PH3 and $1\;{\ell}/min$ for N2. After as grown the films were insitu annealed for 1hour in N2 ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have B13P2 stoichiometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.83-87
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• 2003

Thin films of amorphous carbon (a-C) generally combine high wear resistance with low friction coefficients and a-C films have widespread applications as protective coatings and passivation of electrical circuit and insulating layer. In this work we deposited the amorphous carbon (a-C) films on silicon substrate with a high rate DC magnetron sputtering system. It is obtained parameters on the deposition rate and physical properties of a-C films using a wide range of Ar gas pressure and DC power. The physical properties of the films were analyzed by Nanoindenter and AFM (Atomic Force Microscopy), The electrical properties were investigated by electrical conductivity measurement.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.187-188
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• 2012

본 연구에서는 자동차 연료분사 장치의 내마모성 및 내구성 개선을 목적으로 이온빔 증착법을 이용하여 DLC 코팅을 증착하고 특성을 평가하였다. 특히 $CH_4/C_2H_2$ 분압비에 따라 DLC 박막의 표면조도, 밀착력, 경도등에 미치는 영향을 조사하였으며 DLC 박막의 구조 변화를 관찰하였다. 제조된 박막의 표면조도는 AFM (Atomic Force Microscopy)을 이용하였으며 박막의 밀착력은 스크래치 시험기를 이용하였고 미소 경도는 나노 인덴테이션을 이용하였으며 구조분석은 Raman spectroscopy를 이용하였다. 표면조도 결과 $C_2H_2$ 주입량을 증가함에 따라 표면조도와 경도값은 급격하게 증가하였고 $C_2H_2$만 주입했을 경우 Ra값이 90 nm, 미소 경도값은 2291 Hv로 최대값을 나타내었다.

• Journal of Magnetics
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• v.11 no.1
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• pp.43-50
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• 2006

In this paper, the influences of microstructural and surface morphological developments on the soft magnetic properties and giant magneto-impedance (GMI) effect of the $Fe_{73.5-x}Cr_{x}Si_{13.5}B_{9}Nb_{3}Au_1$ (x = 1, 2, 3, 4, 5) alloys have been presented. It was found that the Cr addition slightly decreased the mean grain size of $\alpha-Fe(Si)$ grains. AFM results indicate a large variation of surface morphology of density and size of protrusions along the ribbon plane due to microstructural changes caused by thermal annealing with increasing Cr content. Ultrasoft magnetic properties of the nanocrystallized samples were noticeably enhanced by properly heat treatments at $T_a=540^{\circ}C$ such as an increase of the magnetic permeability and the decrease of coercivity, which is likely due to the formation of nanoscale $\alpha-Fe(Si)$ phase which reduced the magnetoelastic anisotropy of samples. Accordingly, the GMI effect was observed in the annealed samples. The correlation between the microstructure, surface morphology, and soft magnetic properties were explained by nucleation and growth model.

• Tribology and Lubricants
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• v.21 no.5
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• pp.209-215
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• 2005

Nano/micro friction with the contact area was studied on Si-wafer (100) and diamond-like carbon (DLC) film. Borosilicate balls of radii $0.32{\mu}m,\;0.5{\mu}m,\;1.25{\mu}m\;and\;2.5{\mu}m$ mounted on the top of AFM tip (NPS) were used for nano-scale contact and Soda Lime glass balls of radii 0.25mm, 0.5mm, 1mm were used for micro-scale contact. At nano-scale, the friction between ball and surface was measured with the applied normal load using an atomic force microscope (AFM), and at micro scale it was measured using ball-on flat type micro-tribotester. All the experiments were conducted at controlled conditions of temperature $(24\pm1^{\circ}C)$ and humidity $(45\pm5\%)$. Friction was measured as a function of applied normal load in the range of 0-160nN at nano scale and in the range of $1000{\mu}N,\; 1500{\mu}N,\;3000{\mu}N\;and\;4800{\mu}N$ at micro scale. Results showed that the friction at nano scale increased with the applied normal load and ball size for both kinds of samples. Similar behavior of friction with the applied normal load and ball size was observed for Si-wafer at micro scale. However, for DLC friction decreased with the ball size. This difference of in behavior of friction in DLC nano- and microscale was attribute to the difference in the operating mechanisms. The evidence of the operating mechanisms at micro-scale were observed using scanning electron microscope (SEM). At micro-scale, solid-solid adhesion was dominant in Silicon-wafer, while plowing in DLC. Contrary to the nano scale that shows almost a wear-less situation, wear was prominent at micro-scale. At nano- and micro-scale, effect of contact area on the friction was discussed with the different applied normal load and ball size.