• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1163-1169
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• 1996

The effects of borax on the phase formation of C2S, C4A3 and $\alpha$'-C2S phases. It has negative effects on formation of C4A3 And it lowers the forming temperature of C4AF. It also has been found that borax improves the clinkerization of MBC. In the MBC clinker with borax 3% C2S have larger and more irregular shapes, larger C/S mole ratio and C4A3 have smaller size larger C/ molr ratio than in the clinker without borax.

• Journal of the Korean Data Analysis Society
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• v.20 no.6
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• pp.2721-2731
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• 2018

This study purposes to derive the predictive model for the cold tolerance of Brassica napus, using the data collected in the Tree Breeding Lab of Gyeongsang National University during July and August of 2016. Three Brassica napus samples were treated at each of low temperatures from $4^{\circ}C$ to $-12^{\circ}C$ by decrement of $4^{\circ}C$, step by step, and electrolyte leakage levels were measured at each stage. Electrolyte leakages were observed tangibly from $-4^{\circ}C$. We tried to fit the six nonlinear regression models to the electrolyte leakage data of Brassica napus: 3-parameter logistic model, baseline logistic model, 4-parameter logistic model, (4-1)-parameter logistic model, 3-parameter Gompertz model, and (3-1)-parameter Gompertz model. The baseline levels of the electrolyte leakage estimated by these models were 4.81%, 4.07%, 4.19%, 4.07%, 4.55%, and 0%, respectively. The estimated median lethal temperature, LT50, were $-5.87^{\circ}C$, $-6.31^{\circ}C$, $-6.05^{\circ}C$, $-6.35^{\circ}C$, $-4.98^{\circ}C$, and $-5.15^{\circ}C$, respectively. We compared and discussed the measures of goodness of fit to select the appropriate nonlinear regression model.

• Journal of Bio-Environment Control
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• v.7 no.1
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• pp.15-24
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• 1998

The greenhouse temperature controls in general have been managed by the above-ground part environment, But the temperature of root zone was known very important factor for the 9rofth and the yield of vegetables in greenhouse. The purpose of this study is to develop a good method for cultivation using solar energy which can apply warming soil and to develop the greenhouse soil temperature automatic control system. Followings are summary of this study：1 When the greenhouse inner temperature changes were about 24$^{\circ}C$ during a day in October, the temperature of non-warmed soil was differenced 6$^{\circ}C$ in the depth 10cm and 3$^{\circ}C$ in the depth 20cm. 2. When water supply temperature was kept at 40, 50 and 6$0^{\circ}C$, the lowest soil temperature in the depth of 10cm is 2$0^{\circ}C$ and that of 20cm was 23$^{\circ}C$. and when the water supply temperature was over 4$0^{\circ}C$, the space heating temperature did not affect the temperature variation of soil. 3. In comparison with conditions of the warmed and non-warmed soil, when the water supply temperature is 28$^{\circ}C$, soil temperatures had the high temperature of 4$0^{\circ}C$~7$^{\circ}C$ in the depth of 10cm to 20 cm. 4. The line of boundary area was appeared in the depth of 15~20cm, 13~19cm and 12~17cm. when the water supply temperature was 4$0^{\circ}C$, 5$0^{\circ}C$ and 6$0^{\circ}C$. 5. When th inner greenhouse air temperature is maintained over 11$^{\circ}C$ and the water supply temperature is supported 28$^{\circ}C$, the lowest temperature is kept up over 2$0^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.54-62
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• 2009

${Co_3}{O_4}$ and ${Co_3}{O_4}$-based thick films with additives such as ${Co_3}{O_4}-{Fe_2}{O_3}$(5 wt.%), ${Co_3}{O_4}-{SnO_2}$ (5 wt.%), ${Co_3}{O_4}-{WO_3}$(5 wt.%) and ${Co_3}{O_4}$-ZnO(5 wt.%) were fabricated by screen printing method on alumina substrates. Their structural properties were examined by XRD and SEM. The sensitivities to iso-${C_4}H_{10}$, $CH_4$, CO, $NH_3$ and NO gases were investigated with the thick films heat treated at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. From the gas sensing properties of the films, the films showed p-type semiconductor behaviors. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed higher sensitivity to i-${C_4}H_{10}$ and CO gases than other thick-films. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed the sensitivity of 170 % to 3000 ppm iso-${C_4}H_{10}$ gas and 100 % to 100 ppm CO gas at the working temperature of $250^{\circ}C$. The response time to i-${C_4}H_{10}$ and CO gases showed rise time of about 10 seconds and fall time of about $3{\sim}4$ minutes. The selectivity to i-${C_4}H_{10}$ and CO gases was enhanced in the ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1241-1248
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• 1998

$\beta$-C2S and C4A3 were synthesized separately and potassium oxalate was added to each system. The ad-ditive caused calcium ions in solution to decrease at early time in hydration and promoted hydration reac-tion. And then clinker which is mainly composed of $\beta$-C2S and C4A3 was synthesized at 130$0^{\circ}C$ After ad-ding potassium oxalate to it behavior of hydration was observed. It showed that the additive promoted et-tringtie formation at early time and C-S-H formation as time went on.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.517-526
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• 1990

The crystal structures of two alditol acetates, D-glucitol hexaacetate and xylitol pentaacetate, have been determined by diffraction methods with Mo-K$\alpha$radiation, using direct methods for phase determinations. The crystal data are: for D-glucitol hexaacetate, P2$_1$, with a = 10.275 (2), b = 8.363 (1), c = 12.560 (5) $\AA;\beta$ = 95.97 $(2)^{\circ}$, Z = 2; for xylitol pentaacetate, P2$_1$/C with a = 18.126 (1), b = 11.422 (2), c = 8.649 (1) $\AA$, $\beta = 95.03 (1)^{\circ}$, Z = 4. Both molecules have extended zigzag carbon chain conformations which differ from previous studies of the structures of D-glucitol and xylitol and also differ from NMR studies on alditol acetates. The bond lengths and angles are normal, with mean values over both structures of C($sp^3)-C(sp^3): 1.514 (10),\; C(sp^3)-O: 1.444 (6),\; C(sp^2)-O: 1.347 (9),\; C(sp^2)=O: 1.197 (6),\; C(sp^2)-C(sp^3): 1.479(9){\AA},\; C(sp^3)-C(sp^3)-C(sp^3): 114.6 (17),\; O-C(sp^3)-C(sp^3): 109.4 (23),\; C(sp^2)-O-C(sp^3): 117.4 (6),\; O=C(sp^2)-O: 122.6 (6),\; C(sp^3)-C(sp^2)-O: 111.8 (7),\; C(sp^3)-C(sp^2)=O: 125.5 (4)^{\circ}$. The atoms of acetate groups are in coplanar. There are no particularly short intermolecular contacts and the molecules are held together by van der Waals force only.

• Resources Recycling
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• v.14 no.5 s.67
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• pp.13-17
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• 2005

As a basic study for recycling molten converter slag as an ordinary portland cement (OPC) by a conversion process, the reaction mechanism and the rate of the formation of $C_4AF$ which is one of the main components of OPC were investigated. The converter slag whose basicity was controlled by adding reagent grade $SiO_2$ was melted and hold for 30 minutes in MgO crucible at $1300^{\circ}C{\sim}1350^{\circ}C$. Then, the sintered CaO pellet heated at the same temperature was dipped into the molten slag and hold for $10{\sim}30$minutes. After the reaction, the crucible was cooled in air and the specimen was cut off to the horizontal direction of the crucible. The dissolution rate of $C_3A$ pellet was measured by the change of radius of the sintered $C_3A$ pellet, and the formed phase of $C_4AF$ was observed by SEM/EDX. As a result, the dissolution rate of $C_3A$ pellet into molten slag was increased from $0.75{\times}10^{-4}(cm/sec)$ at $1300^{\circ}C$ to $1.67{\times}10^{-4}(cm/sec)$ at $1350^{\circ}C$, and the mixed layer of $C_4AF$ and $C_{12}A_7$ was found between slag and $C_3A$ pellet.

• Journal of Life Science
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• v.10 no.2
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• pp.50-54
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• 2000

The RAD4 gene of Saccharomyces cerevisiae is essential for the incision step of UV-induced excision repair. A yeast RAD4 gene has been previously isolated by functional complementation. In order to identify the RAD4 homologous gene from fungus Coprinus cinereus, we have constructed cosmid libraries from electrophoretically separated chromosomes of the C. cinereus. The 13 C. cinereus chromosomes were resolved by pulse-field gel electrophoresis, hybridized with S. cerevisiae RAD4 DNA, and then isolated homologous C. cinereus chromosome. Here, we report the cloning and characterization of fungus C. cinereus homolog of yeast RAD4 gene. Southern blot analysis confirmed that C. cinereus contains the sequence homologous DNA to RAD4 gene and this gene exists as a single copy in C. cinereus genome. When total RNA isolated from C. cinereus cells was hybridized with the 3.4 kb BglII DNA fragment of the S. cerevisiae RAD4 gene, a 2.5 kb of transcript was detected. The isolated gene encodes a protein of 810 amino acids.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.7-16
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• 1993

Effect of sulfate on the reactionof C3S formation in presence of clinker melt and its appearance in clinker were investigated, using (NH4)2SO4 and CaSO4 as sulfate sources. When (NH4)2SO4 and CaSO4 were added, both showed the similar results, 1.0wt% of sulfate could promoted the reaction of C3S formation, however for its content of more than 2.0wt%, the formation of C3S was prevented. Residual limit of sulfate to C3S formation is about 1.4wt%. Appearances of sulfate were C4A3l and CaSO4 in interstitial phase. For the addition of (NH4)2SO4 or CaSO4 of 20wt%~4.0wt%, C3S grains showed the hypertrophic growth. We might consider that, because sulfate reduced the surface tension and viscosity of the clinker melt, C3S crystals were precipitated below 140$0^{\circ}C$, and the crystlas of C3S were coalesced and linked in the same crystallographical direction with increasing temperature becuase of their rapid growth rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.151-151
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• 2000

We have studied the atomic structure of Si(100)-c(4$\times$4) reconstruction using scanning tunneling microscopy(STM). The c(4$\times$4) reconstruction can be formed by annealing the hydrogen exposured surface at temperatures between 850 and 960 K. At this temperature ranges, adsorbed hydrogen atoms are all desorbed. Therefore, the c(4$\times$4) reconstruction is due to the Si dimers on surface. The filled and empty state images of the STM were interpreted in terms of Si dimers in c(4$\times$4) primitive cell forming the reconstruction. Based on the STM images and hydrogen adsorption experiment on c(4$\times$40 surface, we suggest that Si dimers in c(4$\times$40 unit cell are perpendicular ad-dimer to the underlying Si dimer rows.