• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.744-746
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• 2008

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$Cu_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• 열처리공학회지
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• 제27권1호
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• pp.1-9
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• 2014

For connector material applications, the influence alloying elements of Mn, Cr, Fe, and Ti and cold rolling reduction on the mechanical property, electrical conductivity and bendiability of Cu-Ni-Si-P alloy was investigated. The hot rolled plates were solution treated at $980^{\circ}C$ for 1.5 h, quenched into water, cold rolled by 10% and 30% reduction in thickness, and then aged at $440{\sim}500^{\circ}C$ for 3, 4, 5 times. respectively. Cu-Ni-Si-P-x alloys cold rolled by 10 reduction before heat treatment have a good bendability compare to cold rolled by 30 reduction. Cu-3.4Ni-0.8Si-0.03P-0.1Ti shows the peak strength value of 759 MPa, an electrical conductivity of 39%IACS, an elongation of 10% and a hardness of 256 Hv aged at $440^{\circ}C$ for 6 hrs. Thus it is suitable for lead frame and connector.

• 한국자기학회지
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• 제17권5호
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• pp.198-204
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• 2007

비정질 FeCuNbSiB 리본 합금의 파쇄분말을 $1{\sim}3\;{\mu}m$의 두께로 편상화한 다음, $375{\sim}525^{\circ}C$의 온도범위에서 1 h 동안 열처리한 후 폴리머 중에 분산시켜 준마이크로파 대역의 전자파 노이즈 억제용 복합 시트를 제조하였다. 이 때 어닐링 온도가 복합 시트의 전자파 전송손실(전력손실)에 미치는 영향을 조사한 결과, $425{\sim}475^{\circ}C$에서 열처리하여 부분 나노결정 구조를 얻었을 때 가장 높은 전력손실 값을 나타내었으며, ${\alpha}-Fe$상으로 결정화 정도를 더 높여 보다 우수한 연자성을 얻게 되는 $525^{\circ}C$에서의 열처리에 의해서는 오히려 전력손실 특성이 저하되었다. 이와 같은 전자파 흡수 특성의 어닐링 온도 의존성은 각각 $425{\sim}475^{\circ}C$에서 나타나는 높은 복소 투자율의 허수항(${\mu}"$) 및 $525^{\circ}C$에서의 큰 투과 파라미터($S_{21}$)에 그 주된 원인이 있는 것으로 판단되었다. 한편 열처리하지 않은 비정질 상태에서는 ${\mu}"$ 값이 작아 매우 낮은 전력손실을 나타내었다.

• 한국재료학회지
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• 제14권12호
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• pp.829-834
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• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• 한국주조공학회지
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• 제15권4호
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• pp.360-367
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• 1995

Effects of metal coating treatment on SiC particle on wetting behavior and interfacial strength were studied. Experimental variables are included types of coated metallic films such as Cu and Ni-P, and temperatures of heat-treatment under vacuum. The experimental results concerning wetting phenomena of liquid Al on SiC, showed that coating treatment of metallic film on SiC particles remarkably improves the wetting behavior of liquid Al on SiC, especially in the case of Ni-P coating. The interfacial strength of Al/SiC composites made of coated SiC plate was higher than that of the composite with non-coated SiC plate although the coating treatment was not perfect.

• 한국산학기술학회논문지
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• 제19권3호
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• pp.576-583
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• 2018

탄화규소는 실리콘과 비교시 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 ${\beta}$-SiC 분말로부터 제조한 다공질 n형 SiC 세라믹스의 경우, $800{\sim}1000^{\circ}C$에서 높은 열전 변환 효율을 나타내었다. SiC 열전 변환 반도체를 응용하기 위해서는 변환 성능지수도 중요하지만 $800^{\circ}C$ 이상에서 사용할 수 있는 고온용 금속전극 또한 필수적이다. 일반적으로 세라믹스는 대부분의 보편적인 용접용 금속과는 우수한 젖음을 갖지 못 하지만, 활성 첨가물을 고용시킨 합금의 경우, 계면 화학종들의 변화가 가능해서 젖음과 결합의 정도를 증진시킬 수 있다. 액체가 고체 표면을 적시면 액체-고체간 접합면의 에너지는 고체의 표면에너지 보다 작아지고 그 결과 액체가 고체 표면에서 넓게 퍼지면서 모세 틈새로 침투할 수 있는 구동력을 갖게 된다. 따라서 본 연구에서는 비교적 낮은 융점을 갖는 Ag를 이용해서 다공질 SiC 반도체 / Ag 및 Ag 합금 / SiC 및 알루미나 기판간의 접합에 대해 연구하였고, Ag-20Ti-20Cu 필러 메탈의 경우 SiC 반도체의 고온용 전극으로 적용 가능할 것으로 나타났다.

• 한국주조공학회지
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• 제29권2호
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• pp.86-94
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• 2009

The effect of austenitizing temperature and time on the processing window of 3.60wt%C - 2.50wt%Si - 0.80wt%Cu ductile cast iron and that of the amount of copper added were investigated. The second stage reaction at 400oC was retarded with increased austenitizing temperature. The widest processing window was obtained at the lower austempering temperature with the increased time at the same austenitizing temperature. The width of the widest processing window was decreased with the increase of time at the same austenitizing temperature. The width of processing window was increased with the increased amount of copper added.

• 한국표면공학회지
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• 제29권6호
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• pp.683-690
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• 1996

In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.505-506
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• 2007

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc/$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL 14004).