• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1079-1082
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• 2004

CuPc와 ZnPc를 이용하여 이종 접합 구조에서의 광기전 특성을 연구하였다. $CuPc/C_{60}$, $XnPc/C_{60}$의 이종 접합 구조에서 $C_{60}$의 접합 두께 비율을 1:1 (20nm:20nm), 1:2 (20nm:40nm), 1:3 (20nm:60nm)로 가변하여 두께와 물질에 따른 광기전 특성 및 엑시톤 억제층의 효과를 분석하였다. 광원은 500W Xe lamp를 이용하였으며, 광원의 세기는 보정된 radiometer/photometer와 Si-photodiode로 dark, 10, 25, 60, 80 그리고 100mW/$cm^2$로 주사하였다.

• Bulletin of the Korean Chemical Society
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• 제13권2호
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• pp.187-192
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• 1992

The classical trajectory method, previously applied to the reactions of polyatomic molecules with fcc structured metal solids[S. C. Park, C. H. Cho, and C. H. Rhee, Bull. Kor. Chem. Soc., 11, $1(1990)]^1$ is extended to the collision energy dependence of the reaction of the Al solid by $SiCl_4$ molecules. We have calculated etching yields, degrees of anisotropy, kinetic energy distributions, and angular distributions for the reactions of the Al solid and compared with those for the reactions of the Cu solid. Over the range of collision energies we considered, the reactions of the Al soIid show higher etching yield and better anisotropy than the reactions of the Cu solid. Details of reaction mechanisms and the relevance of these calculations for the dry etching of CuAl alloy are discussed.

• Journal of Welding and Joining
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• 제33권3호
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• pp.19-24
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• 2015

Joint properties of electric control unit (ECU) module using Sn-Cu-(X)Al(Si) lead-free solder alloy were investigated for automotive electronics module. In this study, Sn-0.5Cu-0.01Al(Si) and Sn-0.5Cu-0.03Al(Si) (wt.%) lead-free alloys were fabricated as bar type by doped various weight percentages (0.01 and 0.03 wt.%) of Al(Si) alloy to Sn-0.5Cu. After fabrications of lead-free alloys, the ball-type solder alloys with a diameter of 450 um were made by rolling and punching. The melting temperatures of 0.01Al(Si) and 0.03Al(Si) were 230.2 and $230.8^{\circ}C$, respectively. To evaluation of properties of solder joint, test printed circuit board (PCB) finished with organic solderability perseveration (OSP) on Cu pad. The ball-type solders were attached to test PCB with flux and reflowed for formation of solder joint. The maximum temperature of reflow was $260^{\circ}C$ for 50s above melting temperature. And then, we measured spreadability and shear strength of two Al(Si) solder materials compared to Sn-0.7Cu solder material used in industry. And also, microstructures in solder and intermetallic compounds (IMCs) were observed. Moreover, thickness and grain size of $Cu_6Sn_5$ IMC were measured and then compared with Sn-0.7Cu. With increasing the amounts of Al(Si), the $Cu_6Sn_5$ thickness was decreased. These results show the addition of Al(Si) could suppress IMC growth and improve the reliability of solder joint.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.727-732
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• 1996

In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 한국결정성장학회지
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• 제10권3호
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• pp.258-263
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• 2000

마이크로파 열처리공정이 여러 가지 CuO 조성을 가진 $Li_2O-2SiO_2$-xCuO 유리의 전기전도도와 결정화 거동에 미치는 영향을 조사하기 위하여 재래식 열처리 공정과 비교하였다. 각기 재래식과 마이크로파 가열법으로 열처리하였을 때, 시편들의 전기전도도는 CuO 함량이 증가할수록 증가하였고, 각 조성에서 마이크로파로 열처리된 시편이 재래식으로 열처리된 시편에 비하여 높은 전기전도도를 보였다. 또한 X-선 회절 실험 결과, 마이크로파 열처리는 $Li_2Si_2O_5$ , $Li_2Cu_5(Si_2O_7)_2$및 $Li_2Cu_O_3$상의 결정화 정도를 향상시켜주었다. $Li_2O-2SiO_2$-1.3CuO(30 mo1% CuO) 유리를 $500^{\circ}C$에서 30분 동안 재래식과 마이크로파로 열처리한 후 상온에서 측정한 시편들의 전기전도도는 각기 $0.11{\times}10^{-4}(\Omega \textrm {cm})^{-1}$과 $0.68{\times}10^{-4}(\Omega \textrm {cm})^{-1}$이었다. 마이크로파 에너지는 시편들의 결정화를 향상시키고, 전기전도도 값도 증가시킨다고 판단되었다.

• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.7-11
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• 2000

공침법을 이용하여 제조한 $SrTiO_3$분말에 $CuO-SiO_2$첨가물을 혼합하여 저전압구동형 SrTiO$_3$세라믹 바리스터 소자를 제조하였다. $CuO-SiO_2$첨가물을 이용한 $SrTiO_3$세라믹 바리스터제조 공정은 복잡한 공정을 단순화시킬 수 있을 뿐만 아니라, 일반적인 소결온도보다 100~$150^{\circ}C$ 낮은 온도에서도 소결이 되었다. 이 바리스터의 비직선계수($\alpha$) 값은 첨가물 5 wt% 혼합하여 $1350^{\circ}C$에서 하소한 시편에서 8.47의 최고값을 나타냈으며, 이때의 구동전압은 7 V 이하로 낮은 구동전압을 가진 바리스터를 제조할 수 있었다.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.106-112
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• 2007

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2007년 추계학술발표대회 개요집
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• pp.245-247
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• 2007

Sn-base solder bump is mainly used in micro-joining for flip chip package. The quantity of intermetallic compounds that was formed between Cu pad and solder interface importantly affects reliability. In this research, micro-bump was fabricated by two binary electroplating and the intermetallic compounds(IMCs) was estimated quantitatively. When the micro Sn-Ag solder bump was made by electroplating, SiC powder was added in the plating solution for protecting of intermetallic growth. Then, the intermetallic compounds growth was decrease with increase of amount of SiC power. However, if the mount of SiC particle exceeds 4 g/L, the effect of the growth restraint decrease rapidly.

• Journal of Radiation Protection and Research
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• 제26권1호
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• pp.7-12
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• 2001

최근 개발된 방사선량 측정용 LiF:Mg,Cu,Na,Si TL 소자의 글로우 곡선, 방출스펙트럼, 광자에 대한 선량의존성, 에너지의존성 및 페이팅 등과 같은 물리적 및 선량계적 특성들을 연구하였다. LiF:Mg,Cu,Na,Si TL 소자는 LiF:Mg,Cu,Na,Si TL 분말에 압력을 가한 후 소결하는 방법으로 제조되었다. 방사선에 대한 특성을 알아보기 위하여 광자선 조사는 한국원자력연구소의 X선 발생 장치 및 $^{137}Cs$ ${\gamma}$선 원격조사장치를 이용하였으며, 사용된 광자선 에너지 범위는 20-662keV, 선량 범위는 $10^{-6}-10^{-2}\;Gy$이었다. 글로우 곡선은 수동형의 TLD 판독장치 (System 310, Teledyne)로 질소를 흘리면서 선형적인 가열률로 측정하였으며, TL 강도는 글로우 곡선을 전체 적분한 면적으로 평가하였다. $5^{\circ}C\;s^{-1}$의 선형적인 가열률로 측정한 글로우 곡선은 5개의 피크들로 분리되었으며, $234^{\circ}C$에 나타나는 주피크의 활성화에너지는 2.34 eV, 진동수인자는 $1.00{\times}10^{23}$이고, 방출스펙트럼은 410nm를 중심으로한 단일한 분포로 나타났다. 선량의존성은 100Gy 이상까지 선형성을 나타내었으며, $^{137}Cs$에 대한 저에너지 광자의 상대적인 에너지 반응값은 20% 범위 이내였다. 또한 실온에서 1년간 보관하였을 때, 시간경과에 따른 TL 감도의 감소가 거의 없는 좋은 페이딩 특성을 보였다.