• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.744-746
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• 2008

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$Cu_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• Journal of the Korean Society for Heat Treatment
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• v.27 no.1
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• pp.1-9
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• 2014

For connector material applications, the influence alloying elements of Mn, Cr, Fe, and Ti and cold rolling reduction on the mechanical property, electrical conductivity and bendiability of Cu-Ni-Si-P alloy was investigated. The hot rolled plates were solution treated at $980^{\circ}C$ for 1.5 h, quenched into water, cold rolled by 10% and 30% reduction in thickness, and then aged at $440{\sim}500^{\circ}C$ for 3, 4, 5 times. respectively. Cu-Ni-Si-P-x alloys cold rolled by 10 reduction before heat treatment have a good bendability compare to cold rolled by 30 reduction. Cu-3.4Ni-0.8Si-0.03P-0.1Ti shows the peak strength value of 759 MPa, an electrical conductivity of 39%IACS, an elongation of 10% and a hardness of 256 Hv aged at $440^{\circ}C$ for 6 hrs. Thus it is suitable for lead frame and connector.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.198-204
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• 2007

The effects of annealing temperature on electromagnetic wave absorption characteristics in $Fe_{73.5}Cu_1Nb_3Si_{15.5}B_7$ (at%) alloy flakes/polymer composite sheets available for quasi-microwave band have been investigated. The composite sheet including the magnetic flakes annealed at $425{\sim}475^{\circ}C$ for 1 h exhibited highest power loss in the GHz frequency range as compared with the sheets composed of the alloy flakes annealed at higher temperature than $475^{\circ}C$ or in as-milled state. Moreover the imaginary part of complex permeability had largest value in the GHz frequency range for the sheets including the flakes annealed at $425{\sim}475^{\circ}C$. The large value of power loss of the sheets including the magnetic flakes annealed at $425{\sim}475^{\circ}C$ was attributed to the high imaginary part of the complex permeability. However, because of its large transmission parameter $S_{21}$, the composite sheet having the magnetic flakes annealed at $525^{\circ}C$ showed low power loss.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.829-834
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• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• Journal of Korea Foundry Society
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• v.15 no.4
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• pp.360-367
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• 1995

Effects of metal coating treatment on SiC particle on wetting behavior and interfacial strength were studied. Experimental variables are included types of coated metallic films such as Cu and Ni-P, and temperatures of heat-treatment under vacuum. The experimental results concerning wetting phenomena of liquid Al on SiC, showed that coating treatment of metallic film on SiC particles remarkably improves the wetting behavior of liquid Al on SiC, especially in the case of Ni-P coating. The interfacial strength of Al/SiC composites made of coated SiC plate was higher than that of the composite with non-coated SiC plate although the coating treatment was not perfect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of Korea Foundry Society
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• v.29 no.2
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• pp.86-94
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• 2009

The effect of austenitizing temperature and time on the processing window of 3.60wt%C - 2.50wt%Si - 0.80wt%Cu ductile cast iron and that of the amount of copper added were investigated. The second stage reaction at 400oC was retarded with increased austenitizing temperature. The widest processing window was obtained at the lower austempering temperature with the increased time at the same austenitizing temperature. The width of the widest processing window was decreased with the increase of time at the same austenitizing temperature. The width of processing window was increased with the increased amount of copper added.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.683-690
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• 1996

In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.505-506
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• 2007

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc/$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL 14004).