• Title/Summary/Keyword: C$_{60}$ films

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A Characteristic study of SiC Nanowires by RF-Sputtering (RF-Sputtering 법에 의한 SiC 나노와이어의 특성연구)

  • Jeong, Chang-Gu;Kim, Tae-Gyu
    • Journal of the Korean Society for Heat Treatment
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    • v.23 no.6
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    • pp.344-349
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    • 2010
  • Silicon carbide nanowires were grown by heat treatment of the films at $1200^{\circ}C$ after amorphous SiC thin films were deposited on graphite substrate by radio frequency magnetron sputtering at $600^{\circ}C$. It was confirmed that SiC nanowires with the diameter of 20-60 nm and length of about 50nm were grown from Field Emission Scanning Election Microscope (FE-SEM) and Transmission Election Microscope (TEM) observation. The diameter of nanowires was increased as heat treatment time is increased. The nanowires were identified to ${\beta}$-SiC single crystalline from X-Ray Diffraction(XRD) analysis. It was observed from this study that deposition temperature of samples was critical to the crystallization of nanowires. On the other hand, the effect of deposition time was insignificant.

Effect of Non-Perforated Breathable Films on the Storability of Sprout Vegetables in Modified Atmosphere Condition (레이저 가공 비천공 Breathable필름이 새싹채소의 Modified Atmosphere 저장에 미치는 영향)

  • Choi, In-Lee;Baek, Jun Pill;Kang, Ho-Min
    • Journal of Bio-Environment Control
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    • v.22 no.2
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    • pp.167-174
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    • 2013
  • Six kinds of sprout vegetables were applied three and six types of non-perforated breathable propylene films (NPB film) for individual and mixed modified atmosphere (MA) package condition at $10^{\circ}C$ on this study. As a tah tasai, kohlrabi, rape, chinese cabbage, red radish, broccoli sprouts were packaged by 20,000, 60,000, and 100,000 $cc{\cdot}m^{-2}{\cdot}day{\cdot}atm$ non-perforated breathable films for seven days storage. Mixed sprout vegetables were used 20,000 cc, 40,000 cc, 60,000 cc, 80,000 cc, and 100,000 $cc{\cdot}m^{-2}{\cdot}day{\cdot}atm$ non-perforated breathable films for seven days storage. Loss rate of fresh weight, changes of carbon dioxide, oxygen, and ethylene gas concentration were measured during the storage. Visual quality and off-flavor were rated by panel tests after seven days storage. Each sprout vegetable storage with film tests had been shown under the 0.5% fresh weight loss in every packaged films, and the 20,000cc NPB film package had been suitable atmosphere condition in the carbon dioxide and oxygen gas concentration. Appearance and off-odor of sprouts packaged with 20,000cc NPB film were shown better than other films because of the proper gas movement through the film to outside during the storage. Fresh weight loss of the mixed sprout vegetables had no difference among the NPB films for seven days storage. The 20,000 cc film had been resulted in that exchange rate of carbon dioxide and oxygen was highest cause of low film permeability than sprouts respiration. But the film is not good for storage because it has been made poor value of off-order even showed high visual quality from panel test after storage. 40,000 cc and 60,000 cc non-perforated breathable films were more suitable for mixed sprout vegetable storage at $10^{\circ}C$. These result suggested that 20,000 cc NPB film was good for single packaged sprout vegetable and 40,000 cc and 60,000 cc non-perforated breathable films were good for mixed packaged sprout vegetable.

HYDROGEN PLASMA DURABILITY OF $SnO_2$:F FILMS (불소 도핑 이산화주석 박막의 수소플라즈마 내구성)

  • Yoon, Kyung-Hoon;Song, Jin-Soo;kang, Kee-Hwan
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.847-849
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    • 1992
  • Fluorine-doped ($SnO_2$:F) thin films obtained by pyrosol deposition method have been exposed to R.F. excited pure hydrogen plasma under the following conditions; substrate temperature of 200$^{\circ}C$, $H_2$ pressure of 1 Torr, R.F. input power of 50 mW/$\textrm{cm}^{2}$, $H_2$ flow rate of 30cc/min and exposure time of 15-600 seconds. It is found that the sheet resistance of the films remains unchanged or rather slightly reduces for initial exposure time of 30-60 seconds, but increases sharply with further increasing the exposure time. The optical transmittance of $SnO_2$:F films slows a rapid fall with increasing exposure time except for a film obtained with a solution having $CH_3OH/H_2O$ mol ratio of 2.65, its degradations at the exposure time of 30-60 seconds are about 7-15%. In addition, the exposure of the films to hydrogen plasma atmosphere leads to remarkable changes in the microstructure and chemical composition, which should be attributed to the reduction of $SnO_2$ to SnO and to elemental Sn.

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A Study on the Stability $Te_{100-x}Ge_x$ Thin Films for Optical Recording (광기록을 위한 Te-Ge 박막의 안정도에 관한 연구)

  • Chung, Hong-Bay;Lee, Young-Jong;Im, Sook
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.229-231
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    • 1996
  • We are studied the stability of amorphous and crystalline $Te_{100-x}Ge_x$ (x=10, 15. 25, 40, 50, 60 at.%) thin films by observing the degradation in 8O%RH/$66^{\circ}C$ environment and the reflectance ratio. The degradation was observed with the transmittance and reflectance, the reflectance was measured at 780nm in the wavelength range of diode laser. In amorphous $Te_{100-x}Ge_x$ thin films of below x=4O at.%, the degradation was observed, the thin film of x=10 at.% was shown the degradation degree of 12.5%. In crystalline $Te_{100-x}Ge_x$ thin films of x=10, 40 at.%, the degradation degree were 12.8%, 13%, respectively. The reflectance ratio were shown above 20% in. all composition ratio. Therefore, we are expected that $Te_{100-x}Ge_x$ thin films of x=50, 60 at.% has the long life for the optical recording media.

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Preparation of $Fe_{3-x}Mn_{x}O_4$ Films by the Ferrite Plating and its Magnetic Properties (Ferrite plating 방법에 의한 $Fe_{3-x}Mn_{x}O_4$ 박막 제작과 자기적 성질)

  • 하태욱;이정식
    • Journal of the Korean Magnetics Society
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    • v.6 no.3
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    • pp.145-150
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    • 1996
  • The magnetic thin films can be prepared without vacuum process and under the low temperature ( < $100^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Fe_{3-x}Mn_{x}O_4(x=0.0~0.023)$ films on glass plate at $80^{\circ}C$. We got the film $9000\AA$ in thickness, having a mirror-like luster. The composition parameter, x, in the $Fe_{3-x}Mn_{x}O_4$ films is much smaller then the corresponding on, x', in the reaction solution(x/x'=O.04). The saturation magnetization($M_{s}$) of $Fe_{3}O_{4}$ ferrite film as measured by a VSM was $M_{s}$=480 emu/cc which agrees with $Fe_{3}O_{4}$ bulk samples.

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The Study on Material Properties of Boron Phosphide

  • Hong, Kuen-Kee;Kim, Chui-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.243-246
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    • 2004
  • Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

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The Effects of Thermal Decomposition of Tetrakis-ethylmethylaminohafnium (TEMAHf) Precursors on HfO2 Film Growth using Atomic Layer Deposition

  • Oh, Nam Khen;Kim, Jin-Tae;Ahn, Jong-Ki;Kang, Goru;Kim, So Yeon;Yun, Ju-Young
    • Applied Science and Convergence Technology
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    • v.25 no.3
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    • pp.56-60
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    • 2016
  • The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of $HfO_2$ thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of $135^{\circ}C-350^{\circ}C$. At temperatures higher than $300^{\circ}C$, there was a rapid decrease in the absorption peaks arising from vibration of $Sp^3$ C-H stretching. This showed that the precursors experienced rapid decomposition at around $275^{\circ}C-300^{\circ}C$. $HfO_2$ thin films were successfully deposited by Atomic Layer Deposition (ALD) at $50^{\circ}C$ intervals between $150^{\circ}C$ to $400^{\circ}C$; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.

Crystallization Characteristics of Reactively Sputtered Titanium Oxide Thin Films (반응성 스퍼터링된 산화 티타늄 박막의 결정화 특성)

  • Lee, Pil-H.;Ko, Kyung-H.;Ahn, Jae-H.;Lee, Soon-I.
    • Korean Journal of Materials Research
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    • v.6 no.8
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    • pp.852-857
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    • 1996
  • Crystallization characteristics of titanium oxide thin film during post-annealing of reactive sputter deposition were studied. Amorphous phases of as-deposited films were crystallized into rutile after annealing at $900^{\circ}C$ and anatase at $500^{\circ}C$, respectively when $O_2$ concentration during sputtering was more than 15%. However, rutile was the only phase obtainable after annealing if %$O_2$ was less than 10%. For these films, Magneli phase($Ti_nO_{2n-1}$) were crystallized below $500^{\circ}C$ at first place due to slow oxidation of nonstoichiometric films but $500^{\circ}{\sim}600^{\circ}C$ anatase with nonstoichiometry was crystallized for a short period. It was, therefore, concluded that crystal growth can proceed without phase transition if stoichiometric phase is formed at the first stage of crystallization, and that rutile, the most stable phase, was resulted from any oxygen deficient nonstoichiometric films.

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Magnetic Properties of SrRuO3 Thin Films Having Different Crystal Symmetries

  • Kim, Jin-I;Jung, C.U.
    • Journal of Magnetics
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    • v.13 no.2
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    • pp.57-60
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    • 2008
  • This study examined the effect of various types of epitaxial strain on the magnetic properties of $SrRuO_3$ thin films. Epitaxial $SrTiO_3$ (001), $SrTiO_3$ (110), and $SrTiO_3$ (111) substrates were used to apply different crystal symmetries to the grown films. The films were grown using pulsed laser deposition. The X-ray diffraction patterns of the films grown under optimum conditions showed very clear peaks for the $SrRuO_3$ film and $SrTiO_3$ substrates. The saturated magnetic moment at 5 K after 7 Tesla field cooling was $1.2-1.4\;{\mu}_B$/Ru. The magnetic easy axis for all three types of films was along the surface normal. The magnetic transition temperature for the $SrRuO_3$ film with lower symmetry was slightly larger than the $SrRuO_3$ film with higher symmetry.