• Title/Summary/Keyword: Bulk samples

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Properties of glass fiber by adding $Ga_2O_3$ in the $SiO_2-PbO-K_2O-Al_2O_ 3$ system for infrared sensor ($Ga_2O_3$ 첨가에 따른 $SiO_2-PbO-K_2O-Al_2O_ 3$계 적외선 센서용 glass fiber의 특성)

  • 이명원;윤상하;강원호
    • Electrical & Electronic Materials
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    • v.9 no.10
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    • pp.1047-1052
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    • 1996
  • In this study, the thermal and optical proper-ties of multicomponent oxide glass fiber for IR sensor by adding heavy metal oxide Ga$_{2}$O$_{3}$ were investigated. The fiber samples were made by rod-in tube method. The optical loss of fiber was measured in 0.3-1.8/M wavelength region. As Ga$_{2}$O$_{3}$ increased up to 12wt%, the transition and softening temperature of bulk glass were increased from 495.deg. C to 564.deg. C and from 548.deg. C to 612.deg. C respectively. Whereas the thermal expansion coefficient was decreased from 102 to 88.2*10$^{-7}$ /.deg. C. The refractive index was increased from 1.621 to 1.662, and IR cut-off wavelength was enlarged from 4.64.mu.m to 5.22.mu.m. The optical loss of fiber was decreased and more remarkably decreased in 1.146.mu.m-1.8.mu.m wavelength region.

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Characterization of Cordierite by XPS (Ⅰ) (XPS에 의한 코디에리트의 특성 연구 (연구Ⅰ))

  • Han, Byoung-Sung
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.3
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    • pp.124-129
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    • 1989
  • The cordierite is of great interest for microelectronic packaging. Its main advantages are low dielectric constant and low thermal expansion. The cordierite precursor obtained by sol-gel synthesis whose sintering temperature is about $900^{circ}C$ is an amorphous and cristal white powder. Green and fired cordierite samples were studied by XPS for microscopic properties. At the surface the results of XPS show forte diminution of Mg in comparison with its value at volume and the deficit of Mg compensates by augmentation of Al and Si. $pi$-cordierite phase is present near the surface $<100{\AA}$ and small quantities of magnesium aluminate ($MgAl_2O_4) is present in the bulk. Sintering of the green cordierite introduces no chemical modification at the surface.

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Heat Transfer Characteristics of Individual Rows for Fin-and-Tube Heat Exchangers (핀-관 열교환기의 열별 열전달 특성)

  • Kim, Nae-Hyun;Shin, Tae-Ryong;Han, Sung-Pil
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.19 no.2
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    • pp.149-155
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    • 2007
  • The row-by-row heat transfer characteristics of fin-and-tube heat exchangers were experimentally investigated. Three wavy fin samples having different rows (one, two and three) and one plain fin sample (three row) were tested for $600{\leq}Re_{D}{\leq}4,000$. The heat transfer data were obtained for individual rows, and the corresponding heat transfer coefficients were reduced from the data. Results showed that the heat transfer coefficients were strongly dependent on the tube row. The heat transfer coefficient decreased as the tube row increased. However, the row effect was different depending on the fin shape. For the wavy fin, the row effect significantly decreased as the Reynolds number increased, yielding approximately the same heat transfer coefficients at $Re_{D}{\approx}2,500$. For the plain fin, however, the row effect lasted for the whole Reynolds number range. The increased mixing of bulk flow by wavy channels appears to induce high heat transfer coefficient (accordingly diminishing row effect) at downstream rows. The heat transfer coefficients of individual rows were higher for heat exchangers having larger tube rows.

Electrical Properties of Low Density Polyethylene Film by Superstructure Change (고차구조 변화에 따른 저밀도폴리에틸렌 박막의 전기적 특성)

  • Shin, Jong-Yeol;Shin, Hyun-Taek;Lee, Soo-Won;Hong, Jin-Woong
    • Journal of the Korean Society of Safety
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    • v.17 no.4
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    • pp.101-109
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    • 2002
  • The electrical properties of polyethylene are changed by the superstructure. Such crystalline polymer as polyethylene or polypropylene changes crystallinity and products spherulite or trans-crystal when it is cooled slowly. In this study, after thermal treatment of LDPE at 100[${circ}C$], in silicone oil for an hour, we made specimens in order of slow cooling, water cooling, quenching according to cooling speed. Also, to study the influence of electrical properties due to the superstructure change, we analyzed physical properties and performed dielectric breakdown experiments using DC and impulse voltage Moreover we measured space charges in bulk using Laser Induced Pressure Pulse(LIPP) method. Trap level of specimen is 0.064[eV] at the low temperature region 0.31[eV] at the high temperature region in DC dielectric strength, 0.03[eV] at the low temperature region 0.0925[eV] at the high temperature region in impulse dielectric strength. As its result shows that the quantity of charges induced from the electrode surface increases with applied voltage time, and the distribution of space charges in samples increases the quantity of charges in proportion to applied voltage.

Effect of Additive $SnO_2$ on Gas Sensing Properties of $SnO_2$ ($SnO_2$의 가스 감응 특성에 미치는 $SiO_2$의 영향)

  • 최우성;김태원;정승우
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.288-292
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    • 1998
  • In this paper, we fabricated $SnO_2$ composite ceramics doped with 0~20mol% $SnO_2$ of bulk type to investigate the CO and $H_2$ gas sensitivity in various composition, temperature, and concentration of CO and $H_2$ gas. At the temperature range from $100^{\circ}C\sim425^{\circ}C$, the measured 1000ppm and 250ppm CO gas sensitivities of $SiO_2-SnO_2$composite ceramics were about 1.0~7.6 and 1.0~5.6, respectively. These values were about 1.0~1.5 times larger than pure $SnO_2$. The maximum 1000ppm CO gas sensitivity of $SiO_2-SnO_2$composites were measured around $325^{\circ}C$. At the temperature range from $270^{\circ}C\sim380^{\circ}C$, the 1000ppm and 500ppm $H_2$gas sensitivities of $SiO_2-SnO_2$ composites were about 2.9~21.2 and 2.1~11.3, respectively. Also the maximum 1000, 500 ppm $H_2$ gas sensitivities of samples were measured around.

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Preparation and Characterization of β-C3N4 in Presence of Seed Carbon Nitride Films Deposited by Laser-Electric Discharge Method

  • Kim, J.I.;Zorov, N.B.;Burdina, K.P
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.3
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    • pp.29-33
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    • 2002
  • A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

A Study on Photoreflectance of n-GaAs Treated with$Se/NH_4OH$ Solution ($Se/NH_4OH$용액으로 처리시킨 n-GaAs의 Photoreflectance에 관한 연구)

  • 김근형;김인수;이정열;이동건;배인호;박성배
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.555-561
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    • 1997
  • The passivation of n-GaAs(100) surface has investigated by photoreflectance(PR). The surface of the sample was treated with the 0.001 N solution Se/NH$_4$OH. After the surface treatment, the samples were annealed between 400 to $700^{\circ}C$ in a $N_2$atmosphere for 10 min. The intensity of PR signal and period of Franz-Deldysh oscillation(FKO) gradually decreased as the annealing temperature increased. The surface electric field(E$_{s}$) of the sample annealed at $600^{\circ}C$ is obtained 1.34$\times$10$^{5}$ V/cm. This value is 1.97 times less than that of unannealed sample. It has found that the passivation of surface occurred when the surface of the sample had been treated with Se/NH$_4$OH solution and annealed from 500 to $600^{\circ}C$. This result could be due to activation of elemental Se on the surface. It has also found that the elemental Se of the surface diffused about 100 $\AA$ into the bulk GaAs when Se-treated sample was annealed at $600^{\circ}C$.>.

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A Study on Indirect-Direct Bandgap Structures of 2D-layered Transition Metal Dichalcogenides by Laser Etching (2차원 층상 구조 전이금속 칼코겐화합물의 레이저 식각에 의한 직접-간접 띠간격 구조 연구)

  • Moon, Eun-A;Ko, Pil-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.576-580
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    • 2016
  • Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

YBCO Bulk Superconductors Prepared by Solid-liquid Melt Growth (고액용융성장법을 이용한 YBCO 단결정 제조)

  • Han, Sang-Chul;Lee, Jeong-Phil;Park, Byeong-Cheol;Jeong, Neyon-Ho;Park, Byung-Jun;Jung, Se-Yong;Han, Young-Hee;Sung, Tae-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.860-863
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    • 2009
  • YBCO bulks with fine $Y_2BaCuO_5$(Y211) particles have been prepared by the top-seed modified powder melting process method, Solid-Liquid Melt Growth(SLMG), with $Y_2O_3$, $BaCuO_2$ and CuO mixing precursor. By using $Y_2O_3$ instead of $Y_2BaCuO_5$ as precursor, the processing became to be simpler and cheaper than the current powder melting process. The microstructures, trapped field and critical current density of the various conditioned YBCO bulks have been analyzed and the effect of Pt additive was studied. The different trapped magnetic field values of the several samples have been explained in the viewpoint of their microstructures. The fabrication of large-sized YBCO single domain has been conducted.

Electrochemical Behavior of the Reduction of Thin Films of $Ag_3Fe(CN)_6$

  • Moon Seongbae;Moon Jung Dae
    • Bulletin of the Korean Chemical Society
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    • v.15 no.12
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    • pp.1042-1045
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    • 1994
  • A thin film of silver ferricyanide (Ag$_3$Fe(CN)$_6$) on a platinum or gold substrates can be reduced electrochemically to the salt of silver ferrocyanide in potassium nitrate solution. The color of these films are orange and these films are shown to be electrochromic. The voltammogram is shown the asymmetry of the oxidation compared to the reduction wave under various supporting electrolytes. The standard heterogeneous electron-transfer rate for these films and bare Pt electrode were 0.49 ${\times}$ l0$^{-2}$ and 1.30 ${\times}$ l0$^{-2}$ cm/s, respectively, obtained using a rotating disc electrode. Rough D$_0$ values, evaluated from the Levich equation, for Fe(CN)$_6^{3-/4-}$ at both SF thin film and a bare Pt disc electrode were shown as 1.2l ${\times}$ l0-6 and 0.94 ${\times}$ l0$^{-6}$ cm$^2$/s, respectively. The conductivities, as determined from the slops of the i-V curves for a ca. 1 mm sample for dried SF potassium rich and deficient bulk samples pressed between graphite electrodes, were 9.34 ${\times}$ l0$^{-9}$ and 5.80 ${\times}$ l0$^{-9}$ (${\Omega}$${\cdot}$cm)$^{-1}$, respectively.