• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.114.1-114.1
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• 2011

Electrical sintering of the front electrode for crystalline silicon solar cells was performed applying a constant DC current to the printed lines. Conducting lines were printed on glass substrate by a drop-on-demand (DOD) inkjet printer and silver nanoparticle ink. Specific resistance and microstructure of sintered silver lines and were measured with varying DC current. To find the relation between temperature increase with changing applied current and specific resistance, temperature elevation was also calculated. Sintering process finished within a few milliseconds. Increasing applied DC current, specific resistance decreased and grain size increased after sintering. Achieved minimum specific resistance is approximately 1.7 times higher than specific resistance of the bulk silver.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.112-115
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

• Carbon letters
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• 제10권4호
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• pp.335-338
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• 2009

In this work, the effect of co-carbon fillers on the electrical and mechanical properties of epoxy nanocomposites was investigated. The graphite nanosheets (GNs) and multi-walled carbon nanotubes (MWNTs) were used as co-carbon fillers. The results showed that the electrical conductivity of the epoxy nanocomposites showed a considerable increase upon an addition of MWNTs when GNs were fixed at 2 wt.%. This indicated that low content GNs formed the bulk conductive network and then MWNTs added were intercalated between the GN layers, resulted in the formation of additional conductive pathway. Furthermore, the flexural strength of the epoxy nanocomposites was enhanced with increasing the MWNT content. It was probably attributed to the flexible MWNTs compared with rigid GNs, resulted in the enhancement of the mechanical properties.

• 한국토양비료학회지
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• 제30권3호
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• pp.234-241
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• 1997

시설 재배지내 염류집적의 원인의 하나인 토양의 용적밀도 변화가 염류집적에 미치는 영향을 조사하기 위해, 충남 예산군 오가면의 시설재배 10여년 연작지 토양의 Ap층을 이용하여 용적밀도 변화에 따른 수리전도도 변화와 전기전도도 및 음이온의 용출특성 변화를 토주(土柱)실험을 통해 조사하였다. 수리전도도(Y, cm/day)와 용적별도(X, $Mg/m^3$)간에는 부의 회귀관계 ($Y=-19.2X^2+6X+15.5$, (r=0.985)) 가 성립하여, 낮은 용적밀도에서는 큰 폭의 수리전도도 감소가 있으며, $1.4Mg/m^3$ 이상의 높은 용적밀도 조건에서는 용적밀도 변화에 따른 수리전도도 변화가 매우 미미 하였다. 위의 5 수준의 용적밀도 조건하에서 시간변화에 따른 용출액 중 용존 물질의 용출속도는 용적밀도 증가에 따라 크게 지연되었다. 용출액의 전기전도도가 최고점에 도달하는 시간을 비교한결과 용적밀도 $1.3Mg/m^3$ 이하에서는 토양단면 10cm를 통과하는데 약 36시간 이내의 시간이 요구되었으며, 용적밀도 $1.4Mg/m^3$ 이상에는 120시간 이상이 요구되어 두 조건사이 약 84시간의 사이가 있었다. 토양내 이행성이 높은 주요 3가지 음이온의 용출속도도 용적밀도 증가에 따라 크게 지연되었으며, 용적밀도 $1.2Mg/m^3$ 일 때 Chloride, Nitrate와 Sulphate가 90%이상 용출 되는데 각각 17, 15, 35시간이 소요된 반면, 용적밀도 $1.5Mg/m^3$ 일 때 각각은 90%이상 용출 되는데 약 130, 125, 213시간이 각각 소요되었다. 따라서 경작층 전후의 큰 용적밀도 차이를 보이고 있는 충남 예산 지역의 시설재배지내 염류집적의 원인들 중 경작층 이하인 지표면 아래 20~30cm 부근에 형성된 용적밀도(容積密度) $1.5Mg/m^3$ 이상인 경반층(硬盤層)에 의한 토양수 흐름과 각종 무기염류의 이동 지연으로 인해 크게 악화되고, 지표면에 염류집적이 가속화된 것으로 판단된다.

• 한국세라믹학회지
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• 제24권2호
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• pp.123-132
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• 1987

Yttria-stabilized zirconia with erbia-lanthana were investigated with respect to the amount of Ln2O3 (Ln; Er, La) addition in the range of 0.5∼5 mol% to the base composition of 8 mol% yttriazirconia. Following analysis and measurement were adopted for the characterization of synthesizes of solid electrolyte; phase transformation, lattice parameter, crystallite size, relative density, chemical composition and SEM/EDS. Electrical conductivity by two-probe method versus temperature from 350$^{\circ}C$ to 800$^{\circ}C$ and frequency in the range of 5Hz∼13MHz by complex impedance method was also conducted together with the determination of oxygen ion transference number by EMF method for the evaluation of their electrical properties. The results were as followsing; Electrical conductivity were decreased with increase in Ln2O3 content, but their activation energies increased. In the case of La2O3 addition, espicially, its electrical conductivity was decreased owing to the segregation of second phases at the grain-boundary. Grain-boundary conductivity of the specimen contained 0.5 mol% Er2O3 exhibited a maximum conductivity among thecompositions experimented. However, their bulk conductivities decreased in both case. Oxygen ion transference number was also reduced with decrease in oxygen partial pressure. For example, in the case of Er2O3 addition it retained value in the range of 0.97∼0.94 abvove 4.74${\times}$10-2in oxygen partial pressure. With the increase in the quantities of the evaporation of additive components, the crystallite size of stabilized zirconia decreased, and their relative density also reduced owing to the formation of porosity in their matrices. In the case of La2O3 the sinterbility was improved in the limited amount of addition up to 0.5 mol%, in the same range of addition the strength of sintered bodies were improved perhaps owing to the precipitation of metastable tetragonal phase in the fully stabilized zirconia.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.88-92
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• 2020

Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO₂ and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.

• 한국세라믹학회지
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• 제44권12호
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• pp.696-702
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• 2007

The family of (Sr,Mg)-doped $LaGaO_3$ compounds, which exhibit high ionic conductivity at $600-800^{\circ}C$ over a wide range of oxygen partial pressure, appears to be promising as the electrolyte for intermediate temperature solid oxide fuel cells. Conventional synthesis routes of (Sr,Mg)-doped $LaGaO_3$ compounds based on solid state reaction have some problems such as the formation of impurity phases, long sintering time and Ga loss during high temperature sintering. Phase stability problem especially, the formation of additional phases at the grain boundary is detrimental to the electrical properties of the electrolyte. From this point of view, we focused to synthesize single phase (Sr,Mg)-doped $LaGaO_3$ electrolyte at the stage of powder synthesis and to apply relatively low heat-treatment temperature using novel synthesis route based on combustion method. The synthesized powder and sintered bulk electrolytes were characterized by XRD, TG-DTA, FT-IR and SEM. AC impedance spectroscopy was used to characterize the electrical transport properties of the electrolyte with the consideration of the contribution of the bulk lattice and grain boundary to the total conductivity. Finally, relationship between synthesis condition and electrical properties of the (Sr, Mg)-doped $LaGaO_3$ electrolytes was discussed with the consideration of phase analysis results.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• 한국전기전자재료학회논문지
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• 제28권12호
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• pp.852-856
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• 2015

In this study, we investigate the effect of high-energy ball milling on thermoelectric transport properties in double-filled $CoSb_3$ skutterudite ($In_{0.2}Yb_{0.1}Co_4Sb_{12}$). $In_{0.2}Yb_{0.1}Co_4Sb_{12}$ powders are milled using high-energy ball milling for different periods of time (0, 5, 10, and 20 min), and the milled powders are consolidated into bulk samples by spark plasma sintering. Microstructure analysis shows that the high-energy ball milled bulk samples are composed of nano- and micro-grains. Because the filling fractions are reduced in the bulk samples due to the kinetic energy of the high-energy ball milling, the carrier concentration of the bulk samples decreases with the ball milling time. Furthermore, the mobility of the bulk samples also decreases with the ball milling time due to enhanced grain boundary scattering of electrons. Reduction of electrical conductivity by ball milling has a decisive effect on thermoelectric transport in the bulk samples, power factor decreases with the ball milling time.

• 대한전기학회논문지
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• 제41권9호
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.