• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.996-1000
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide $(SiO_2)$ under both Negative-bias Temperature Instability (NBTI) and Hot-carrier-induced (HCI) stresses using P and NMOSFETS, The devices are annealed with hydrogen or deuterium gas at high-pressure $(1\~5\;atm.)$ to introduce higher concentration in the gate oxide. Both interface trap and oxide bulk trap are found to dominate the reliability of gate oxide during electrical stress. The degradation mechanism depends on the condition of electrical stress that could change the location of damage area in the gate oxide. It was found the trap generation in the gate oxide film is mainly related to the breakage of Si-H bonds in the interface or the bulk area. We suggest that deuterium bonds in $SiO_2$ film are effective in suppressing the generation of traps related to the energetic hot carriers.

• 한국해양공학회지
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• 제18권4호
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• pp.65-70
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• 2004

Many port states, such as New Zealand, U.S.A., Australia, and Canada, have strict regulations to prevent arriving ships from discharging polluted ballast water that contains harmful aquatic organisms and pathogens. They are notified that transfer of polluted ballast water can cause serious injury to public health and damage to property and environment. For this reason, ballast exchange in deep sea is perceived as the most effective method of emptying ballast water. The ballast management plan contains the effective exchange method, ballast system, and safety considerations. In this study, we pursued both nautical engineering analysis and optimization of the algorithm, in order to generate the sequence of stability and rapidity. A heuristic algorithm was chosen on the basis of optimality and applicability to a sequential exchange problem. We have built an optimized algorithm for the automatic exchange of ballast water, by redefining core elements of the A$\ast$ algorithm, such as node, operator, and evaluation function. The final version of the optimized algorithm has been applied to existing bulk carrier, and the performance of the algorithm has been successfully verified.

• Journal of Radiation Protection and Research
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• 제48권3호
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• pp.124-130
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• 2023

Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly. Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs. Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively. Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.345.2-345.2
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• 2016

Alumina (Al2O3) doped zinc oxide (ZnO) films (AZO) have been prepared from 2 wt.% Al2O3 doped ZnO target by DC magnetron sputtering at a 2 mTorr (0.27 Pa) chamber pressure in (15 sccm) argon ambient. We obtained films of various opto-electronic properties by variation of target angle from 32.5o to 72.5o. At lower target angle deposited films show higher values in optical gap, mobility of charge carrier, carrier concentration, crystallite grain size, transmission range of wavelength, which are favorable characteristics of AZO as a transparent conducting oxide (TCO). At higher target angle the sheet resistance, work function, surface roughness for the AZO films increases. Measured haze ratio of the films changed lower to higher and size of characteristic surface structure of as deposited film ranges from ~40 nm to ~300 nm. By a combination of low and high target angle we obtained a textured TCO film with high conductivity.

• 한국산학기술학회논문지
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• 제12권2호
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• pp.588-593
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• 2011

프로그레시브 노칭과 포밍금형에 있어서 박판성형해석에 의한 사전 분석은 제품을 양산하는데 꼭 거쳐야 하는 필수과정이다. 본 논문에서 연구한 Ez5는 일본 S 자동차의 미국 현지 공장에서 발주한 수출 금형을 가지고 스트립 레이아웃 설계에 관한 것을 연구한 것이다. 광폭 1열 1개 뽑기의 편측캐리어를 단 배열로 블랭크 레이아웃을 최적화하여 13개 공정으로 된 스트립 레이아웃설계를 완성하였다. 이런 형태의 금형수주는 앞으로 동시 다발적이고, 매우 빈번히 인터넷 공간상에서 발생할 것이며 금형에 대한 기술력을 갖춘 업체는 이러한 방식에 대응할 준비를 갖추어야 할 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.134.2-134.2
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• 2014

Photonic crystal solar cells have the potential for addressing the disparate length scales in polymer photovoltaic materials, thereby confronting the major challenge in solar cell technology: efficiency. One must achieve simultaneously an efficient absorption of photons with effective carrier extraction. Unfortunately the two processes have opposing requirements. Efficient absorption of light calls for thicker PV active layers whereas carrier transport always benefits from thinner ones, and this dichotomy is at the heart of an efficiency/cost conundrum that has kept solar energy expensive relative to fossil fuels. This dichotomy persists over the entire solar spectrum but increasingly so near a semiconductor's band edge where absorption is weak. We report a 2-D, photonic crystal morphology that enhances the efficiency of organic photovoltaic cells relative to conventional planar cells. The morphology is developed by patterning an organic photoactive bulk heterojunction blend of Poly(3-(2-methyl-2-hexylcarboxylate) thiophene-co-thiophene) and PCBM via PRINT, a nano-embossing method that lends itself to large area fabrication of nanostructures. The photonic crystal cell morphology increases photocurrents generally, and particularly through the excitation of resonant modes near the band edge of the organic PV material. The device performance of the photonic crystal cell showed a nearly doubled increase in efficiency relative to conventional planar cell designs. Photonic crystals can also enhance performance of other optoelectronic devices including organic laser.

• 한국항해학회지
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• 제18권2호
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• pp.19-40
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• 1994

Several factors can be chosen for evaluating seakeeping performance, such as deck wetness, propeller racing, slamming, rolling, vertical acceleration and vertical bending moment, in consi-deration of the safety of human being, cargo and ship. In fact, there are few developments for an evalua-tion method of seakeepting performance correponding with each ship's characteristics. The purpose of this paper is to develop an quantitative evaluation method of seakeeping performance according to ship types. The scope and the method of this study are as follow. (1) Obtain each response amplitude of ship's motion in waves by Ordinary Strip Method and apply it to short-crested, irregular wave for random process of the factors on seakeeping performance. (2) Define the evaluation index, the dangerousness, the maximum dangerousness and the evaluation diagram. (3) Figure out the different characteristics according to ship types by computer simulation of evaluating seakeeping performance. (4) Adopt vertical acceleration and one of rolling or lateral acceleration as the factors on seakeeping performance by clarifying the correlation of stochastic process. This study developed an evaluation method coincident with each ship's characteristics, and suggested a device for application to actual ship. This method might be useful in developing the practical system of seakeeping performance in accordance with ship types. The ship models for computer simulation are 175m container ship types, 93m tranning ship HANARA as passenger ship type, 259m bulk-carrier type and 164m pure car-carrier type.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• 한국세라믹학회지
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• 제49권6호
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.