• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.681-689
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• 2010

We will demonstrate a novel topology for the feedforward amplifier. This amplifier does not use a delay element thus providing an efficiency enhancement and a size reduction by employing a distributed element negative group delay circuit. The insertion loss of the delay element in the conventional feedforward amplifier seriously degrades the efficiency. Usually, a high power co-axial cable or a delay line filter is utilized for a low loss, but the insertion loss, cost and size of the delay element still acts as a bottleneck. The proposed negative group delay circuit removes the necessity of the delay element required for a broadband signal suppression loop. With the fabricated 2-stage distributed element negative group delay circuit with -9 ns of total group delay, a 0.2 dB of insertion loss, and a 30 MHz of bandwidth for a wideband code division multiple access downlink band, the feedforward amplifier with the proposed topology experimentally achieved a 19.4 % power added efficiency and a -53.2 dBc adjacent channel leakage ratio with a 44 dBm average output power.

• ETRI Journal
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• v.23 no.1
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• pp.1-8
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• 2001

The performance of a long wavelength-band erbium-doped fiber amplifier (L-band EDFA) using 1530nm-band pumping has been studied. A 1530nm-band pump source is built using a tunable light source and two C-band EDFAs in cascaded configuration, which is able to deliver a maximum output power of 23dBm. Gain coefficient and noise figure (NF) of the L-band EDFA are measured for pump wavelengths between 1530nm and 1560nm. The gain coefficient with a 1545nm pump is more than twice as large as with a 1480nm pump. It indicates that the L-band EDFA consumes low power. The noise figure of 1530nm pump is 6.36dB at worst, which is 0.75dB higher than that of 1480nm pumped EDFA. The optimum pump wavelength range to obtain high gain and low NF in the 1530nm band appears to be between 1530nm and 1540nm. Gain spectra as a function of a pump wavelength have bandwidth of more than 10nm so that a broadband pump source can be used as 1530nm-band pump. The L-band EDFA is also tested for WDM signals. Flat Gain bandwidth is 32nm from 1571.5 to 1603.5nm within 1dB excursion at input signal of -10dBm/ch. These results demonstrate that 1530nm-band pump can be used as a new efficient pump source for L-band EDFAs.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.17-23
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• 2006

In this paper, Adjacent Channel Power Ratio (ACPR) of wireless Orthogonal Frequency Division Multiplexed (OFDM) system interconnected with Radio over Fiber (RoF) link is analyzed for broadband convergence network applications. Unlike previous results, ACPR of the total link, which is involved with Radio Frequency (RF) amplifier as well as ROF link, at 5.8 GHz in IEEE 802.11a environment is simulated and compared at both system ends.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.6 s.109
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• pp.597-604
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• 2006

An ultrawideband(UWB) $3.1{\sim}5.15$ GHz low-noise amplifier employing a novel input matching circuit and feedback topology are presented. The proposed UWB amplifier is Implemented in $0.18{\mu}m$ RF CMOS technology. Measurements show a NF of $3.4{\sim}3.9$ dB, a power gain of $12.8{\sim}14$ dB, better than -9.4 of input matching and, an input IP3 of -1 dBm, while comsuming only 14.5 mW of power.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.6
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• pp.2201-2216
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• 2015

Peak to average power ratio (PAPR) is one of the main imperfections in the broadband communication systems with multiple carriers. In this paper, a new crest factor reduction (CFR) scheme based on interleaved phase sequence called Dummy Sequence Insertion Enhanced Partial Transmit Sequence (DSI-EPTS) is proposed which effectively reduces the PAPR while at the same time keeps the total complexity low. Moreover, the prototype of the proposed scheme in field programmable gate array (FPGA) is demonstrated. In DSI-EPTS scheme, a new matrix of phase sequence is defined which leads to a significant reduction in hardware complexity due to its less searching operation to extract the optimum phase sequence. The obtained results show comparable performance with slight difference due to the FPGA constraints. The results show 5 dB reduction in PAPR by applying the DSI-EPTS scheme with low complexity and low power consumption.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.5A
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• pp.305-315
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• 2003

MC-CDMA(Multicarrier code division multiple access), which is based on a combination of OFDM(orthogonal frequency division multiplexing) and CDMA(code division multiple access), has gained a lot of interests in wireless multimedia communications, as high speed data transmission is required for mobile services. MC-CDMA has many advantages for broadband high speed data transmission in multipath environment because it can offer both advantages of the CDMA and the OFDM. However, A high PAPR(peak to average power ratio) problem, which is a major drawback of OFDM, is also shown in the MC-CDMA. In this paper, we propose a new phase factor optimization scheme to reduce complexity in PTS(partial transmit sequence) to reduce PAPR. We also analyze the performance of the MC-CDMA with various PTS schemes to investigate the relations between PAPR characteristics and effect of nonlinear distortion of a high power amplifier. Our simulation results reveal that the proposed PTS scheme reduces PAPR about 0.2∼0.5 dB even with 25% reduced- complexity compared to the conventional scheme.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.688-693
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• 1999

This paper presents a very simple coupled line structure for MMIC which uses stacked microstrip line and does not employ any dielectric process step. For the analysis and optimization of these coupled line structure, HP-Momentum was used. The measured performance of 3 dB coupler shows 23 to 45 GHz broadband characteristics. Additionally, a balanced 2-stage Ka-Band power amplifier which uses the proposed 3 dB coupler, was also fabricated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.12
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• pp.1684-1690
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• 2018

A new digital pre-distortion (DPD) technique for closely spaced dual-band signals is proposed. In the system under consideration, dual-band signals are amplified by a single broadband power amplifier (PA) at a transmitter. The PA output is distorted by cross-modulation between the two bands as well as their own inter-modulation distortion. Especially, if the two bands are placed in close proximity to each other, their spectral regrowths due to in-band intermodulation overlap with each other, which degrades DPD performance. To solve this problem, we propose a new DPD technique where the dual-band PA characteristics are estimated first, and then the DPD parameters are obtained from the estimated PA characteristics. By finding the DPD parameters through two steps, pre-distortion can perform well for the closely-spaced dual band signals. The proposed technique is verified through computer simulation. Simulation result shows that the proposed method performs better than the conventional method for closely-spaced dual band signals.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.77-84
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• 2007

In this parer, a wideband low-noise amplifier (LNA) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion RF receivers. By exploiting the inverter-type transimpedance input stage with a 3rd-order Chebyshev matching network, the wideband LNA demonstrates the measured results of the -3dB bandwidth of 5.35GHz, the power gain (S21) of $12\sim18dB$, the noise figure (NF) of $6.9\sim10.8dB$, and the broadband input/output impedance matching of less than -10dB/-24dB within the bandwidth, respectively. The chip dissipates 32.4mW from a single 1.8V supply, and occupies the area of $0.56\times1.0mm^2$.