• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.109-109
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• 2010

$Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• 한국재료학회지
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• 제16권12호
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• pp.761-765
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• 2006

[ $II-III_2-(S,Se)_4$ ] structured of phosphor has been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, the europium doped $BaGa_2S_4$ was prepared by solid-state method and had high potential application due to an emissive property of UV region. Also, the common sulfide phosphors were synthesized by using injurious $H_2S\;or\;CS_2$ gas. However, in this study $BaGa_2S_4:Eu^{2+}$ phosphor in addition to excess sulfur was prepared under at 5% $H_2/95%\;N_2$ reduction atmosphere. Thus, this process could be considered as large scale synthesis because of non-harmfulness and simplification. The photoluminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than that of commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could be applied to green phosphor for white LED of three wavelengths.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.167-170
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• 2004

The stochiometric mix of evaporating materials for the $CuGaT_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, $CuGaTe_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $2.1{\mu}m$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $CuGaTe_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}s.o$ and the crystal field splitting ${\Delta}cr$ were $0.079\underline{1}eV$ and $0.246\underline{3}eV$ at 10 K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.047\underline{0}eV$ and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be $0.049\underline{0}eV$, $0.055\underline{8}eV$, respectively.

• 대한원격탐사학회지
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• 제35권5_2호
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• pp.861-871
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• 2019

Landsat 위성영상은 재난 피해 지역에 대해 주기적이며 광역적인 관측이 가능하여 재난 피해분석, 재난 모니터링 등 활용도가 증가하고 있다. 하지만 광학위성영상 특성상 구름으로 인한 결측된 영역으로 인해 주기적인 재난 모니터링에는 한계가 있어 결측된 영역의 복원 연구가 필요하다. 본 연구에서는 Landsat 8호 영상 취득 시 제공되는 QA밴드를 이용하여 구름 및 구름그림자를 탐지 및 제거하고, STARFM 알고리즘을 통해 제거된 영역의 영상 복원을 수행하였다. 복원된 영상은 기존의 영상 복원 방법으로 복원된 영상과 MLC 기법을 통해 정확도를 비교하였다. 그 결과, STARFM으로 인한 복원방법이 전체정확도 89.40%로, 기존의 영상 복원 방법보다 효율적인 복원방법임을 확인하였다. 따라서 본 연구결과를 통해 향후 Landsat 위성영상을 이용한 재난분석 수행 시 활용도를 높일 수 있을 것으로 기대된다.

• 대한조선학회논문집
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• 제31권1호
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• pp.84-93
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• 1994

본 연구에서는 NACA0012단면을 갖는 타원형날개끝 캐비테이션과 유기소음특성에 미치는 표면거칠기의 영향이 실험적으로 조사되었다. 사용한 표면거칠기는 조도 $200{\mu}m$의 입자로서, 날개끝 3cm 구간에 부착하였다. 또한 날개끝과 앞날에 각각 3cm의 거칠기를 준 경우도 별도로 조사되었다. 캐비테이션 발생시험 결과 캐비테이션 초기발생위치는 실험한 받음각 범위에서 날개끝으로부터 대략 1/2 코오드정도 후류이며, 캐비테이션 수가 감소함에 따라 변화하는 형상을 보였다. 날개끝 캐비테이션에 의한 소음은 주파수 3-50kHs사이의 비교적 고주파수에서 음압이 증가하는 양상을 보였으나, 더 낮은 캐비테이션수에서 날개 앞날 캐비테이션으로 확장되면 전 주파수 범위에 걸쳐서 소음이 증가하었다. 캐비테이션과 소음발생은 표면거칠기가 증가할때 개선되는 경향을 보였으나 그 차이는 크지않았다. 날개 앞날과 끝날에 거칠기를 준 경우가 낮은 캐비테이션수에서 다소 유리한 캐비테이션 특성을 보여준 반면 양력-항력비의 감소에 따른 문제점도 지적되었다.

• 공업화학
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• 제32권2호
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• pp.125-131
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• 2021

일반적인 반도체 기반의 광촉매는 물질 고유의 밴드갭 때문에 자외선이나 가시광선에 의해서만 활성화될 수 있고, 태양광 에너지의 약 50%를 차지하는 근적외선 영역의 에너지는 활용할 수 없다. 따라서 기존의 반도체 광촉매의 성능을 향상시키기 위해서는 자외선에서 근적외선에 이르는 넓은 영역에서 더 많은 태양광 에너지를 활용할 수 있어야 한다. 태양광의 근적외선 영역을 활용하기 위해 기존 반도체 광촉매를 업컨버전 나노입자와 결합하는 연구들이 수행되고 있다. 업컨버전 나노입자는 근적외선 광자를 여러 개 흡수하여 자외선이나 가시광선으로 변환하여 광촉매를 활성화할 수 있다. 그리고 반도체 광촉매와 업컨버전 나노입자에 플라즈모닉 금속 나노입자를 함께 결합시키면 태양광에 의한 광촉매 활성을 더욱 향상시킬 수 있다. 본 총설은 업컨버전 나노입자를 이용하여 근적외선 영역의 태양광 에너지가 광촉매의 성능 향상에 기여할 수 있도록 하는 최근의 연구결과를 바탕으로 서술하였다.

• 천문학회지
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• 제54권2호
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• pp.37-47
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• 2021

Reverberation mapping (RM) is an efficient method to investigate the physical sizes of the broad line region (BLR) and dusty torus in an active galactic nucleus (AGN). The Spectro-Photometer for the History of the Universe, Epoch of Reionization and Ices Explorer (SPHEREx) mission will provide multi-epoch spectroscopic data at optical and near-infrared wavelengths. These data can be used for RM experiments with bright AGNs. We present results of a feasibility test using SPHEREx data in the SPHEREx deep regions for torus RM measurements. We investigate the physical properties of bright AGNs in the SPHEREx deep field. Based on this information, we compute the efficiency of detecting torus time lags in simulated light curves. We demonstrate that, in combination with complementary optical data with a depth of ~ 20 mag in B-band, lags of ≤ 750 days for tori can be measured for more than ~ 200 bright AGNs. If high signal-to-noise ratio photometric data with a depth of ~ 21-22 mag are available, RM measurements are possible for up to ~ 900 objects. When complemented by well-designed early optical observations, SPHEREx can provide a unique dataset for studies of the physical properties of dusty tori in bright AGNs.

• 한국미생물·생명공학회지
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• 제47권3호
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• pp.449-458
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• 2019

Hepatitis B treatments using immune therapy are gaining interest because of the improvements in dendritic cell performance for antigen presentation, which induces an appropriate immune response and raises patient survival rates. This research aims to produce a significant amount of the HBcAg antigen, which can induce an immune response and have a curative effect on HBV infection. In this study, the HBV subgenotype B3 of the HBcAg gene was used, which is dominant in Indonesia. Further, Lactococcus lactis bacteria was used as the host because of its safety and tightly regulated protein expression. The codon usage for the HBcAg gene was optimized to improve protein expression in L. lactis, which is important because a codon is not random between species. The HBcAg gene is attached to a pNZ8148 plasmid and transformed into the L. lactis NZ3900 expression host. The results confirm that a positive protein band (21 kDa) in two fractions of purified HBcAg was recognized by both western blotting and dot blot hybridization, even if the HBcAg optimized codon has higher GC contents than that suggested for L. lactis expression. Overall, this research strengthens the broad use of L. lactis bacteria for any protein expression, including higher protein expression of codon optimized HBcAg gene compared to non-optimized genes. Furthermore, the improvement in the codon optimization of the HBcAg gene significantly increases the total protein expression by 10-20%, and the expression level of the codon optimized HBcAg increases 1.5 to 3.2-times that of the native HBcAg.