• 한국전기전자재료학회논문지
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• 제28권12호
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• pp.787-791
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• 2015

In this paper, the growing orientation of PMN-PT single crystal is analyzed using the Laue-Back Reflection Method. Two kinds of PMN-PT single crystals are grown using the Bridgman growing method in the [001] and [111] directions and their the Laue photographs are simulated assuming cubic crystal systems. From the comparison between simulation and test results, it can be concluded that the single crystals are grown in the desired crystal orientations.

• 한국결정학회지
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• 제7권1호
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• pp.81-87
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• 1996

석영 boat를 반응용기로 쓰는 수평 Bridgman 법에서, GaAs 단결정에 유입되는 Si 농도를 Ga-As 계의 상평형에 근거한 열역학적 평형을 가정하여 성장방법 별로 계산하였고, Hall 측정에 의한 전자 농도 측정치와 비교하였다. 단일 온도대역 수평 Bridgman(1-T HB) 법의 경우 Si 농도의 계산치가 5.3 ×10 15(atoms/cm3)인데 비해 실험치는 9.8 ×10 15(/cm3) 이었고, 이중 온도대역 수평 Bridgman(2-T HB) 법에서는 계산치가 1.1 ×10 16(atoms/cm3), 측정치가 1.5 ×10 16(/cm3) 인 것으로 각각 나타났다. 한편 1-T나 2-T HB 법에 비하여 성장시간이 절반 정도인 VGF(vertical gradient freeze) 방법의 경우 이론치와 실험치가 비교적 일치 하였고 그 값은 (6∼8) ×10 15 (atoms/cm3)인 것으로 나타났다.

• 한국결정성장학회지
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• 제25권6호
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• pp.231-238
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• 2015

사파이어 단결정은 GaN계 화합물 증착이 용이하여 고휘도 LED(Light Emitting Diode), 고출력 레이저 산업 등에서 크게 각광받고 있다. 다양한 사파이어 단결정 제조공법 중 vertical Bridgman 공법은 고품질의 사파이어를 c-축 방향으로 성장시킬 수 있는 공법이며 상업적으로 적용이 검토되고 있다. 본 연구에서는 2인치 사파이어 성장 vertical Bridgman 공정에서 성장시 온도구배에 의해 발생하는 열응력을 유한요소 모델을 통해 분석하였다. 이를 통해 성장시 수직, 수평방향으로의 온도구배가 사파이어 결정의 열응력과 결함발생에 미치는 영향을 검토하였다.

• 한국세라믹학회지
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• 제29권7호
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• pp.539-543
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• 1992

The continuous growth method was developed for Mn-Zn Ferrite single crystals. It is a new process that the polycrystalline MnχZn1-χFe2O4 raw materials are supplied continuously from the powder feeding system to the crucible heated by R.F. induction and melted in the crucible, and after the single crystals seed is attached to crucible's hole, the crystals are pulled downward with rotation. Growing the crystals by using the growth method different from the conventional Bridgman or Floating Zone method, we defined the factors having effect on the crystal growing through the pre-experiments. They are temperature distribution in the crucible, melt velocity according to its height, wettability between the crucible's bottom and melt. Therefore, Mn-Zn Ferrite single crystals were to be grown by attaining the appropriate melt height in the crucible, powder feeding rate, temperature gradient between the crucible and interface, crystal growing speed, and this method was confirmed to have possibility for single crystal growing.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.9-13
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• 1998

Large vacuum Bridgman-Stockbarger (BS) equipments was composed for growing large diameter CaF2 crystals. The CaF2 crystal of 4.5-inch was grown under the conditions of freezing temperature gradient of 12$^{\circ}C$/cm and growing rate of 3mm/hr. Also the 6-inch crystal was grown by using thermal stabilization method under freezing temperature gradient of 14$^{\circ}C$/cm and growing rate of 2mm/hr. The dislocation density was characterized for evaluating the quality of crystals. And the optical properties such as transmittance, refractive index and fluorescence were analyzed in order to investigate on the applications of optical components.

• 한국결정성장학회지
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• 제1권2호
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• pp.23-33
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• 1991

Mn-Zn Ferrite는 단결정을 성장하기 위하여 용융하는 동안 불균질 용융과 ZnO휘발의 고유특성을 갖는 재료이다. 그 결과로, 결정성장축을 따라 양이온의 분포가 불균일 하게 된고 또한 기존의 Bridgman법에서는 도가니내에서 용융대가 장시간 유지됨으로써 백금입자가 결정안으로 침입하게된다. 이들은 훼라이트의 자기적 성질을 저하시키는 성질을 갖고 있다. 그러나 새로운 성장법에서는 이러한 단점들을 극복하고 양질의 단결정을 얻기 위하여 결정성장 인자들의 관계를 고찰하였으며 그 인자들은 다음과 같다 : 도가니내의 melt 높이, melt의 표면장력과 밀도, 계면에서의 melt거동, 도가니와 고액계면의 형상, 원료공급속도, 결정성장속도. 아울러, 성장된 결정의 조성을 분석하였을 때 초기조성과 비교하여 $\textrm{Fe}_2\textrm{O}_3$ 1.5 mol%, MnO, Zn 2.0 mol% 이내로 조성 변동은 각각 억제되었고 성장결정면 (110)에서 화확적인 etching 법을 이용하여 광학현미경을 통해 결정내부등을 관찰하였으며, 자기적 특성등을 측정하였다.

• 한국주조공학회지
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• 제12권3호
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• pp.203-209
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• 1992

Directional solidification of Al-Ti peritetic alloys was carried out using Upward Continuous Casting Process. The morphology of a solid-liquid interface and solidification microstructures were investigated under various crystal growing conditions. The experimental results were compared with those attained by the Bridgman method. The cell spacing of the Al-Ti peritetic alloys and the primary dendrite arm spacing of the Al-Ti peritetic alloys decreased with an increase in pulling speed. The primary ${\beta}$ phase of the Al-Cr and Al-Ti peritectic alloys did not appear in solidification microstructures because of the depleted solute contents in the melt ahead of the solid-liquid interface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• 한국군사과학기술학회지
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• 제1권1호
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.